The main application and preparation method of titanium silicide
The size of the devices and equipment is shrinking rapidly with the development of ULSI (ultra-large scale integrated circuits) and the increasing demands of people for film thickness uniformity and device quality, as well as increased requirements regarding the dimensions of the films and their quality, has led to a rapid increase in the demand for ULSI. The line width of current semiconductor devices has decreased to less than 1 mm. Also, it is impossible for the original process to produce continuous low-resistance wires. For circuit metallization, we need new materials, methods and deposition systems to replace or improve aluminum and highly doped polysilicon. The interest in silicates, which are high conductivity and stable at high temperatures and compatible with modern microelectronic manufacturing processes has increased dramatically. While there are many metal silicides, such as TiSi2, CoSi2, WSSi2, TaSi2, MOSi2, etc., titanium silicide, TiSi2, has the most desirable characteristics. This includes high selectivity and high conductivity. Good process adaptability. Therefore, in integrated circuit devices, titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field-effect transistor (MOSFET), and dynamic random access memory (DRAM) gate, source/drain, interconnection and ohm Contact manufacturing.Preparation of a semiconductor element, including a silicon substrate, a gate, source, and drain are formed on the silicon substrate, and an insulating layer is formed between the gate and the silicon substrate, the gate is located on the insulating layer. It is made up of the titanium silicide layer and the polysilicon layers. On the layer of titanium silicide, a protective layer is created. Three layers surround the protective layer: the titanium silicide and polysilicon layers and the insulating. This technical solution allows the utility model to insulate completely the grid as well as the contacts in the window.
Titan silicide application
Production of titanium silicide
You can make metal silicides by using physical vapor deposit (sputtering or thermal evaporation), etc. chemical vapor deposition. TiSi2 that is low-resistant can be prepared by preparing titanium silicide. TiSi2 is available in two polycrystalline phases, the metastable C49 and thermodynamically stabilized C54. C49 Phase is an orthogonal top-centered crystal system. Each unit cell is comprised of 12 elements. a =0.362nm, B =1.376nm and c = 0.360nm. resistivity = 60100mO * cm. C54 Phase is an orthogonal face center crystal system. Every unit cell is comprised of 24 atoms. Because TiSi2 in the C54 phases has a resistance equivalent to the metal, preparation of titanium silicide is the goal.
It is used extensively in the production of an oxide metal semiconductor (MOS), a MOSFET and a dynamic random access memory(DRAM). The application of titanium silicide includes:
1) Preparation of a titanium silicide barrier. A titanium silicide barrier is prepared using this method. An oxide layer of sacrificial sulphur is placed on the device's upper surface. The invention includes the following: A photolithography procedure is used to cover non-silicide regions; the wet and dry etching processes are used to remove the sacrificial silicon layer from the silicide. The invention removes the silicide oxide layer of prior art. This reduces costs and increases process stability.
2) Preparation and use of in-situ synthesized aluminum titanium carbide (Ti5Si3) to reinforce the titanium silicide. A certain amount of titanium was added to Ti3AlC2/Ti5Si3 composite materials. The volume percentage of the reinforced titanium silicide phase was 10-40%. This preparation procedure is first: titanium powder (or aluminum powder), silicon powder (or graphite) are used as raw material. The molar ratio for Ti: Al. Si: C (1.1-x), x (1.8 2.0), where the value of x is 0.1 to 0.5. After mixing the raw materials powder, 8 to 24 hours are required for the process. Next, heat is applied at 10 to 20MPa. Once the temperature is reached, the graphite melt is placed in the hot press furnace. Sintering temperatures range from 1400 to 1600. The sintering times is approximately 0.5 to 2 hours. Invention can produce aluminum titanium carbide/titanium carbid composite material of high purity and strength in relatively short periods of time and at very low temperatures.
Three. Preparation for composite functional titanium silicon silicide coated glasses. A thin layer of silica is applied to a common glass substrate. A composite film made of titanium silicide, silicon, or by doping the film with a small amount active carbon or nitrogen to create a titanium silicide or titanium carbide composite silicon nitride/titanium nitride composite silicide film. This will improve the chemical and mechanical resistance of the coated glass. A new coating glass is available that blends the benefits of heat insulation, dimming, and heat insulation.
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