Now China has become a powerful country in science and technology, but do you know how powerful China's technology is? The manned space station alone is not enough, and now it has successfully broken through the key technology of nuclear fusion, even leading the world by 15 years. Does this mean that China is not far from the artificial sun? It turned out that the fully superconducting tokamak nuclear fusion experimental device developed by China at the Hefei Research Institute of the Chinese Academy of Sciences successfully achieved a record of 101 seconds of continuous operation at 120 million degrees Celsius, and broke the world record. Compared with the previous record in South Korea, China has time has been directly extended by 5 times, and it seems that we are one step closer to the practical stage of artificial sun.
The success of nuclear fusion technology will lead to the development of silicon carbide powder.
What is Silicon Carbide SiC?
Silicon carbide (SiC) is a hard compound containing silicon and carbon. A semiconductor, it is found in nature in the form of the extremely rare mineral moxanite.
It has been mass-produced in powder and crystal form since 1893 for use as an abrasive. Silicon carbide particles can be sintered together to form very hard ceramics that are widely used in applications requiring high durability, such as ceramic plates in car brakes, car clutches, and bulletproof vests. Large silicon carbide single crystals can be grown by the Lely method, and they can be cut into gemstones called synthetic mossanes.
What can Silicon Carbide Devices Bring to New Energy Vehicles?
Silicon carbide power devices have been used in critical power systems inside electric vehicles, including traction inverters, on-board chargers (OBC), and DC-DC converters. Key advantages over traditional silicon devices include higher voltage and higher frequency features, resulting in higher system efficiency, faster switching, lower losses, and better thermal management. Compared with silicon-based devices, silicon carbide devices have the following advantages:
The use of silicon carbide devices can make the driving motor bear more input power at low speed, and because of its high thermal performance, not afraid of the thermal effect and power loss caused by excessive current. When the vehicle starts, the driving motor can output more torque and obtain stronger acceleration ability.
SiC devices can reduce the loss through two dimensions of conduction/switching, so as to achieve the purpose of increasing the range of electric vehicles. The results show that the turn-off loss of sic-MOS is about 20% of that of Si-IGBT at 25°C junction temperature. At 175°C junction temperature, the turn-off loss of sic-MOS is only 10% of that of SI-IGBT. In general, the use of SiC devices in new energy vehicles can increase the driving range by 5-10%, and the average driving range is more than 600 kilometers.
High rated voltage
Silicon carbide MOSFET has a higher voltage rating, making the technology suitable for EV applications and EV quick charging infrastructure. More importantly, the SiC can be replaced directly without major changes, enabling rapid development while keeping the BOM low.
To achieve lightweight thanks to the superior performance of SiC, SiC devices can achieve the effect of reducing the volume in the following aspects:
1, the package size is smaller, and the average weight is reduced by 150 to 200 kg;
2, reduce the use of filters and passive devices such as transformers, capacitors, inductors, etc.;
3, reduce the radiator volume.
At present, the price of SiC devices is 4-6 times that of silicon based devices, but the use of SiC devices to achieve a substantial reduction in battery cost and the improvement of the range, reducing the overall cost of the vehicle.
Silicon Carbide Price
The price is influenced by many factors including the supply and demand in the market, industry trends, economic activity, market sentiment, and unexpected events.
If you are looking for the latest SiC price, you can send us your inquiry for a quote. ([email protected])
Silicon Carbide Supplier
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and nanomaterials including silicon powder, nitride powder, graphite powder, zinc sulfide, calcium nitride, 3D printing powder, etc.
If you are looking for high-quality SiC, please feel free to contact us and send an inquiry. ([email protected])
According to the bank of Spain's latest forecast data, the average inflation is expected to hit 7.6% in 2022, but the average wage increase for workers in this country is expected to be less than 4% in 2022.
If the Bank of Spain's forecast comes true, the gap between price and wage growth in Spain in a single year will be the largest since 1984.
Prices in Spain rose 9.8% year on year in March 2022 and average wages rose 2.4% year on year, with the Bank of Spain forecasting that the country's inflation rate will improve from July.
Recent changes in the international situation have had a big impact on commodity and energy prices. How the prices of the silicon carbide powder will develop in the future is still uncertain.
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