Main questions about GaN
Because gallium nitride is a wide-bandgap semiconductor, and its polarity is too large, it is more difficult to obtain better metal-semiconductor ohmic contact through high doping. This is a difficult problem in the manufacture of GaN devices, so the performance of GaN devices is often good or bad. It is related to the production result of ohmic contact. A better solution now is to use a heterojunction. First, let the band gap gradually transition to a smaller one, and then use high doping to achieve ohmic contact, but this process is more complicated. In short, ohmic contact is a major problem that needs to be solved in the manufacture of GaN devices.
Inquery us
PREVIOUS NEWS
As many researchers believe, graphene floating on the water does not repel water, but attracts it. Graphene is made of the same material as graphite-for example, found in pencils-which is why graphene has long been thought to be as waterproof as gra…
Since the beginning of this year, people around the world have felt the pressure of rising prices. Not only the rise in oil prices but also different industries have seen soaring prices. According to the latest data, from August 2021 to the present,…
Russian President says if the European Union imposes an oil embargo, Europe will buy energy at the most expensive price and economic activity in Europe will weaken. Rosneft needs to change its business model. Russia will help facilitate settlement an…