Morphology control of layer structured gallium selenide nanowires
What is GaSe?
GaSe has been used as a semiconductor and a far-infrared conversion material at 14-31 THz and above. GaSe also finds applications in highly-efficient solar cells and battery technology. GaSe is a non-linear optical material with great potential in non-linear optical devices and THz generation. Recently, two-dimensional (2D) GaSe materials have drawn the increasing attention of researchers because of their superior performance in optical and electrical aspects. Hu et al. Reported a photodetector based on few-layer GaSe materials for the first time, with a responsivity of 2.8 A/W under 254 nm illumination and a corresponding quantum efficiency of 1367%, which is much higher than MoS2 and other two-dimensional semiconductor materials, such as graphene. Since then, many efforts have been made to strengthen the performance of 2D GaSe devices by changing the device structure or processing. Meanwhile, obtaining high-quality 2D GaSe materials is an important way to improve device performance.
High-Quality GaSe Single Crystal Grown by the Bridgman Method
GaSe is often prepared by mechanical exfoliation from bulk GaSe or vapor phase transport techniques. Lei et al. The reported vapor phase transport method to grow GaSe atomic layers for the first time and the photoconductivity measurements show an on/off ratio of 103. GaSe nanoplates epitaxial increase on transparent flexible mica substrates showed photo-responsivity of 0.6 A/W. Recently, Xiong et al. Succeed in synthesizing GaSe nanoribbons through one step thermal deposition process. The GaSe nanoribbon-based photodetectors showed an on/off ratio of 103, a field-effect differential mobility of 0.03 cm2 V−1 s−1, and the response time was less than 0.3 s. Generally, those methods use Ga/Ga2Se3 or Ga2Se3 as source materials, which may result in heterogeneous or non-stoichiometric composition and morphology. These introduced impurities and defects will finally deteriorate the performance of the devices. Mechanical exfoliation is a promising method where high quality can be inherited from the bulk crystal, and large-scale 2D GaSe can be obtained.
Morphology control of layer-structured gallium selenide nanowires
Layer-structured group III chalcogenides are highly anisotropic and attractive materials for stable photocathodes and battery electrodes. In this work, the vapor phase growth of high-quality monolayer GaSe nanosheets with multiple shapes and sizes is achieved by tuning the Ga/GaSe ratio in the precursor. A theoretical model based on density functional theory calculations and kinetic Wulff construction theory describes the observed shape evolution of the GaSe nanosheets. Results show that the Ga/Se ratio plays a critical role in the domain shape and size evolution. Moreover, the as-grown GaSe nanosheets show improved performance with a photoresponse time of less than 0.7 ms and responsibility up to 3,000 A/W. This study presents a previously unexplored strategy for controlling two-dimensional (2D) GaSe nanosheet growth for promising applications in next-generation optoelectronics.
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