Aluminum nitride is a kind of ceramic material with excellent comprehensive performance, and its research can be traced back to more than 100 years ago. It was discovered by F.Birgeler and A. Gutter in 1862, and synthesized by J.W. Mallets for the first time in 1877, but there was no practical application in the following 100 years. It was used as fertilizer only as a nitrogen-fixing agent. Because aluminum nitride is a covalent compound with a small self-diffusion coefficient and high melting point, it is difficult to sinter. It was not until the 1950s that people successfully made aluminum nitride ceramics for the first time and used them as refractory material in the smelting of pure iron, aluminum, and aluminum alloy.
AlN can be stabilized to 2200℃. The strength at room temperature is high and decreases slowly with the increase of temperature. Good thermal conductivity, low thermal expansion coefficient, is a good heat shock material. It is an ideal crucible material for melting and casting pure iron, aluminum, or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties. It is also a promising electrical component. The aluminum nitride coating on gallium arsenide protects it from ion implantation during annealing. Aluminum nitride is also a catalyst for conversion from hexagonal boron nitride to cubic boron nitride. Reacts slowly with water at room temperature. It can be synthesized from aluminum powder in ammonia or nitrogen atmosphere at 800~1000℃. The product is white to grayish-blue powder. Or by al2O3-C-N2 system reaction synthesis at 1600~1750℃, the product is gray powder. Or aluminum chloride and ammonia gas should be opposite. The coating can be prepared by the alCl3-NH3 system by vapor deposition.
It is reported that much of the current research is developing a light-emitting diode based on a semiconductor (gallium nitride or aluminum gallium alloy) that operates in ultraviolet light at a wavelength of 250 nanometers. It was reported in May 2006 that an inefficient diode can emit light waves with a wavelength of 210 nm . The single al nitride crystal has an energy gap of 6.2eV measured by vacuum ultraviolet reflectance. In theory, the energy gap allows some waves with wavelengths of about 200 nanometers to pass through. But in commercial practice, there are many difficulties to overcome. Aluminum nitride is used in optoelectronic engineering, including as an inducible layer in optical storage interfaces and electronic substrates, as a wafer carrier with high thermal conductivity, and for military applications.
Because of the piezoelectric properties of al nitride, the extensional extension of al nitride crystals is also used in surface acoustic wave detectors. The detectors are placed on silicon wafers. There are very few places where these thin films can be reliably made.
Aluminum nitride ceramics have high room temperature and high-temperature strength, small coefficient of expansion, good thermal conductivity, which can be used as high-temperature structural parts of the heat exchange equipment materials.
Aluminum nitride ceramics can be used as a crucible and casting mold material for melting of Al, Cu, Ag, Pb, and other metals by its corrosion resistance of iron, aluminum
and other metals and alloys.
Aluminum nitride Supplier
TRUNNANO (aka. Luoyang Tongrun Nano Technology Co. Ltd.) is a trusted global chemical material supplier & manufacturer with over 12 years of experience in providing super high-quality chemicals and Nanomaterials. Currently, our company has successfully developed a series of materials. The aluminum nitride produced by our company has high purity, fine particle size, and impurity content. Send us an email or click on the needed products to send an inquiry.
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