Advanced materials: multiferroic heterojunction -- ferroelectric and antiferromagnetic order driven magnetic topological state formation

The

magnetic topological state (sigmingon) is a topologically protected domain structure. Because of its small size (< 100 nm) low driving current density it has a good application prospect in spintronics high-density memory devices in the future has attracted extensive attention in various research fields. At present the magnetic topological states are mainly driven by the DM (dzyaloshinskii Moriya) interaction at the interface mainly exist at the interface surface of ultra-thin materials which brings great challenges for their practical applications in the future. It is found that the rapid decrease of interfacial DM interaction with material thickness is the fundamental reason for this behavior. Therefore how to overcome the limitation of interface DM interaction is one of the important ways to extend the interface magnetic topological state to the bulk state.

Chen Jingsheng research group of National University of Singapore has grown multiferroic materials BiFeO3 SrRuO3 together by laser molecular beam epitaxy to prepare high-quality multiferroic heterojunction. The ferroelectric polarization of BiFeO3 is fully utilized to break the symmetry of BiFeO3 / SrRuO3 interface form interface DM; the antiferromagnetic order of BiFeO3 SrRuO3 form strong magnetic coupling to regulate the magnetic configuration of interface. The anomalous Hall effect test shows that the topological Hall effect (the) related to the magnetic topological state can appear in 40 single pack SrRuO3 films which greatly exps the thickness of the magnetic topological state driven by pure iron polarization (5 single packs). Dai Yingying associate researcher of functional materials devices research department Institute of metals Chinese Academy of Sciences deeply studied the influence of ferroelectric polarization antiferromagnetic coupling other parameters on the magnetic schmingon in multiferroic heterojunction through micromagnetic simulation drew the phase diagram of the magnetic schmingon formation conditions theoretically confirmed the experimental scheme proposed in this study. It is worth noting that the diameter of sigmin in BiFeO3 / SrRuO3 heterojunction is only 20 ~ 30 nm which has potential application value in high density memory devices. The experimental scheme of this study can be directly extended to other heterojunctions with magnetic coupling. The researchers of

believe that this study provides a practical effective scheme to overcome the limitation of DM interaction exp the interface magnetic topological state provides an experimental theoretical basis for the development of topological electronics.


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