Molybdenum Disulfide-based photodetectors have been designed and developed using different electrode materials and van der Waals heterostructures (vdWHs) to improve their optoelectronic properties. The performance of Molybdenum Disulfide-based photodetectors can be increased using rGO layers. Shows a schematic of the multilayer Molybdenum Disulfide photodetector developed with Mo bottom contacts (100 nm) on thermally oxidized SiO2/Si substrates (270 nm) and the photoresponsivity and EQE of the ML Molybdenum Disulfide photodetector measured over the 400–1100 nm spectral region, as reported by Saenz et al. The photodetector exhibited ultrahigh photoresponsivity of 1.4 × 104 A W−1 and detectivity of 2.3 × 1011 Jones at a 700 nm wavelength with a 14.5 pW laser power for the multilayer Molybdenum Disulfide device fabricated using 100 nm thick Mo bottom electrodes, with a broadband photoresponse from the UV to IR regime. The photoresponsivity increased from 8 × 103 A W−1 at 400 nm to 1.4 × 104 A W−1 at 1100 nm at a bias voltage of 20 V, and the EQE varied from 3.6 × 104 to 1.4 × 104 within the 400 nm to 1100 nm wavelength range. Photoresponsivities of 1 × 103 A W−1 and 42 A W−1 were recorded at incident powers of 70 pW and 15.85 nW, respectively, at a bias voltage of 5 V and 300 K. The decrease in the photoresponsivity resulted from the loss of photocarriers due to recombination effects. Vu et al. used Molybdenum Disulfide/h-BN/graphene vdWHs to develop a photodetector. Depicts a schematic of the Molybdenum Disulfide/h-BN/graphene photodetector, its cross-sectional STEM image, its energy dispersive X-ray spectroscopy (EDS) elemental mapping, and its photoresponsivity and absorbance as a function of photon energy. An h-BN insulating layer was inserted between the Molybdenum Disulfide photo absorber and the graphene electrode. If you are looking for high quality, high purity and cost-effective Molybdenum Disulfide, or if you require the latest price of Molybdenum Disulfide, please feel free to email contact mis-asia.