Silicon dioxide has been used as a primary gate dielectric material
Silicon dioxide has been used as a primary gate dielectric material in metal-oxide-semiconductor field effect transistors (MOSFETs) for over 30 years. However, as the dimension of MOSFET devices is scaled down to sub-0.1μm, higher dielectric constant materials are needed to allow the use of physically thicker gate dielectric with electrically equivalent oxide thickness (EOT). Also, amorphous structure material with highly stable interface on silicon is required. Among many high-k materials, hafn