New technology in the field of charging heads—gallium nitride charger
Gallium Nitride: Overview It is an inorganic compound with the chemical name GaN. A mixture of nitrogen and galium it can also be called a direct energy gap semiconductor. This compound has been widely used since 1990 in light-emitting transistors. It has an identical structure to wurtzite and high hardness. Because gallium nitride's energy gap is large at 3.4 electron volts it can be used to make optoelectronic parts that are high-power or high-speed. Galium nitride is a good choice for violet