Many researchers are investigating the possibility of yttrium nitride
Researchers are investigating combining transition metal nitrides with IA nitride semiconductors (aluminum nitride, gallium nitride, and indium nitride) as layered structures or alloys to realize new functional properties. The similar lattice constants and the shared common element (N) have inspired efforts to combine layers as epitaxial films. Scandium nitride and zirconium nitride have been employed as buffer layers between silicon substrates and GaN epitaxial films to block the initiation and