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Amorphous boron nitride

Amorphous boron nitride (a-BN) layers are used in some semiconductor devices, e.g., MISFETs. They can be prepared by the chemical decomposition of trichloro borazine with cesium or by thermal chemical vapor deposition methods. Thermal CVD can also be used to depose h-BN layers or, at high temperatures, c-BN. The fullerene-like forms of boron nitride can be synthesized and structurally resemble carbon-carbon nanotubes. The recently discovered boron nitride nanotubes are an important development due to their homogeneous electronic behavior. Tubes of different chiralities are all semiconductor materials with the same (approximate) band gap. Adding boron nitride to silicon nitride ceramics improves the thermal shock resistance of the resulting material. BN has also added silicon nitride-alumina and titanium nitride-alumina ceramics for the same purpose. Other materials being reinforced with BN are, e.g., alumina and zirconia, borosilicate glasses, glass ceramics, enamels, and composite ceramics with titanium boride-boron nitride and titanium boride-aluminum nitride-boron nitride and silicon carbide-boron nitride composition. Due to its excellent dielectric and insulating properties, BN is used in electronics, e.g., as a substrate for semiconductors, microwave-transparent windows, structural material for seals, electrodes, and catalyst carriers in fuel cells and batteries. H-BN can be included in ceramics, alloys, resins, plastics, rubbers, and other materials, giving them self-lubricating properties. Such materials are suitable for the construction of, e.g., bearings. Plastics filled with BN have decreased thermal expansion, increased thermal conductivity, increased electrical insulation properties, and cause reduced wear to adjacent parts. If you are looking for high quality, high purity, and cost-effective Boron nitride, or if you require the latest price of Boron nitride, please feel free to email contact mis-asia.

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