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What is gallium nitride?

Gallium nitride is an inorganic substance, the chemical formula GaN is a compound of nitrogen and gallium, which is a direct bandgap semiconductor, since 1990, commonly used in light-emitting diodes. This compound is similar in structure to wurtzite and has high hardness. Gallium nitride has a wide energy gap of 3.4 electron volts and can be used in high-power, high-speed optoelectronic devices. For example, gallium nitride can be used in laser diodes of purple light and can be used without the use of a diode-pumped solid-state laser. Produces a violet (405nm) laser.

Is gallium nitride better than silicon?
The higher breakdown field means gallium nitride is superior to silicon in high-voltage circuits such as high-power products. Manufacturers and engineers can also use gans for similar voltage applications while maintaining a smaller footprint.
Why is gallium nitride important?
Gallium nitride (GaN) is becoming increasingly important because of its ability to significantly improve performance in a wide range of applications while reducing the energy and physical space required to achieve performance compared to traditional silicon technologies.
Is gallium nitride the silicon of tomorrow?
Share all share options: Gallium nitride is the silicon of the future. Anker has unveiled its tiny new power brick, which the company credits for its small size to the component it uses instead of silicon: gallium nitride (GaN).
Gallium nitride properties
An overview:
GaN is a very stable compound, but also a hard material with a high melting point, melting point of about 1700℃, GaN has a high degree of ionization, in the ⅲ — ⅴ group of compounds is the highest (0.5 or 0.43). Under atmospheric pressure, GaN crystals are generally hexagonal wurtzite structures. It has four atoms in a cell about half the size of GaAs.Because of its high hardness, but also a good coating protection material.
The chemical characteristics:
At room temperature, GaN is insoluble in water, acids, and bases and dissolves at a very slow rate in hot alkaline solutions.NaOH, H2SO4, and H3PO4 can quickly corrode poor GaN, which can be used to detect the defects of these low-quality GaN crystals. GaN is unstable at high temperatures in HCL or H2 gas, and most stable at N2 gas.
The structural characteristics:
GaN crystal structure mainly has two kinds, namely wurtzite structure and sphalerite structure.
The optical properties:
The characteristics of GaN are focused on its application in blue and violet light-emitting devices. Maruska and Tietjen first accurately measured the GaN direct gap energy as 3.39eV. Several groups studied the dependence of the GaN bandgap on temperature, and Pankove et al. estimated an empirical formula for the bandgap temperature coefficient: dE/dT=-6.0×10-4eV/ K.Monemar determined that the basic bandgap was 3.503eV±0.0005eV and Eg=3.503+ (5.08×10-4T2)/(T-996) eV at 1.6kT.
In addition, many people are studying the optical properties of GaN.
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