As a new ceramic material with excellent comprehensive performance, aluminum nitride (AlN) is a hexagonal crystal, pure AlN is blue-white, usually gray or off-white. Aluminum nitride ceramics have excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxic and thermal expansion coefficient matching silicon, etc. Excellent characteristics, considered to be an ideal material for a new generation of highly integrated semiconductor substrates and electronic device packaging.
1. AlN as substrate material
Most ceramics are materials with extremely strong ionic or covalent bonds and have excellent comprehensive properties. They have commonly used substrate materials in electronic packaging. They have high insulation properties and excellent high-frequency characteristics. At the same time, the coefficient of linear expansion and electronic components are very similar, the chemical properties are very stable and the thermal conductivity is high. From 1985 to 1988, the application of aluminum nitride in microelectronic encapsulation materials emerged. In the past, alumina and beryllium oxide ceramics have been used as substrate materials for most high-power hybrid integrated circuits for a long time, but the basic thermal conductivity of alumina is low, and the thermal expansion coefficient is not very matched with silicon. Although beryllium oxide has excellent overall performance, Its high production cost and high toxicity limit its application and promotion. Therefore, considering factors such as performance, cost, and environmental protection, the two can no longer fully meet the development needs of modern electronic power devices.
2. AlN as electronic film material
Electronic thin film materials are the foundation of microelectronic technology and optoelectronic technology, so the research on various new electronic thin film materials has become a hot spot for many scientific researchers. Aluminum nitride was discovered in the 1860s as an electronic thin-film material and has a wide range of applications. In recent years, wide-gap semiconductor materials and electronic devices represented by group IIIA nitrides have developed rapidly, and are known as the third generation following the first generation semiconductors represented by Si and the second generation semiconductors represented by GaAs semiconductor. AlN, as a typical IIIA nitride, has attracted more and more attention from domestic and foreign researchers.
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