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Applications of Monolayer MoS2

MoS2 has been intensively studied for almost ten years, and many potential applications have been investigated. Below is a selection of these. Field-effect transistors: The large direct bandgap and relatively high carrier mobility in MoS2 make it an obvious choice for FETs. Early experiments on single-layer MoS2 transistors showed great promise, with recorded mobilities of 200 cm2V-1s-1 and an on/off ratio of ~108. It has been suggested that such devices may outperform silicon-based FETs in several key metrics, such as power efficiency and on/off ratio. However, they tend to show only n-type characteristics. Much effort has been applied to refining FETs by reducing substrate interactions, improving electrical injection, and realizing ambipolar transport. Photodetectors: The bandgap properties of MoS2 also lend themselves to optoelectronic applications. A device fabricated from an exfoliated flake with sensitivity 880 AW-1 and broadband photoresponse (400-680nm) was first demonstrated five years ago. Combining graphene into a monolayer heterostructure enhanced sensitivity by a factor of 104. Solar cells: Monolayer MoS2 has visible optical absorption that is an order of magnitude greater than silicon, making it a promising solar cell material. When combined with monolayer WS2 or graphene, power conversion efficiencies of ~1% have been recorded. While these efficiencies appear low, the active area of such devices only has a thickness of ~1 nanometer (compared to 100’s micrometers for silicon cells), corresponding to a 104 times increase in power density. A type-II heterojunction cell consisting of CVD-grown monolayer MoS2 and p-doped silicon has shown a PCE of over 5%. Chemical sensors: The photoluminescence (PL) intensity of monolayer MoS2 highly depends on the physical adsorption of water and oxygen onto its surface. Electron transfer from the n-type monolayer to gas molecules stabilizes excitons and increases the PL intensity by up to 100 times. Other studies on the electrical properties of FET structures have shown that monolayer-based sensors are unstable when detecting NO, NO2, NH3, and humidity. Still, the operation can be stabilized by using a few layers. Sensitivities of <1ppm have been recorded for the case of NO. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.

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