Development of molybdenum disulfide
Although graphene has many dazzling advantages, it also has drawbacks, especially its inability to act as a semiconductor – which is the cornerstone of microelectronics. Chemists and materials scientists work hard to cross graphene and find other materials. They are synthesizing two other two-dimensional sheet materials that combine flexibility and transparency and possess electronic properties that graphene cannot match, with molybdenum disulfide being one of them. Molybdenum disulfide was synthesized in 2008 and is a member of the large family of transition metal disulfide materials (TMDs). This somewhat "fancy" name represents their structure: a transition metal atom (i.e. molybdenum atom) and a pair of particles from the 16th column of the periodic table, including sulfur and selenium elements (this element family is known for oxygen group elements). To the surprise of electronic manufacturers, all TMDs are semiconductors. They have almost the same thickness as graphene (in molybdenum disulfide, two layers of sulfur atoms sandwiched with one layer of molybdenum atoms in the middle like a "sandwich"), but they have other advantages. As far as molybdenum disulfide is concerned, one of the advantages is the running speed of electrons in the plane slice, that is, electron mobility. The electron migration rate of molybdenum disulfide is about 100cm2/vs (100 electrons per square centimetre per volt second), which is far lower than the electron migration rate of crystalline silicon of 1400cm2/vs. Still, it is better than amorphous silicon and other ultra-thin semiconductors. Scientists are studying these materials to make them used in future electronic products, such as flexible displays and other electronic products that can be flexibly extended. Research has shown that molybdenum disulfide is also extremely easy to produce, even when making large two-dimensional materials. This allows engineers to quickly test their performance in electronic products. For example, in 2011, a research team led by Andras Kis of the Swiss Federal Institute of Technology published an article in "Nature Nanotechnology" stating that they had produced the first batch of transistors using molybdenum disulfide monolayers with a thickness of only 0.65 nanometers. The results have shown that those products and subsequent products have other unique attributes compared to similar silicon-based products that are more advanced in technology. If you are looking for high quality, high purity and cost-effective molybdenum disulfide, or if you require the latest price of molybdenum disulfide, please feel free to email contact mis-asia.
