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Dielectric properties of boron nitride

Atomically thin hexagonal boron nitride is an excellent dielectric substrate for graphene, molybdenum disulfide (MoS2), and many other 2D material-based electronic and photonic devices. As shown by electric force microscopy (EFM) studies, the electric field screening in atomically thin boron nitride shows a weak dependence on thickness, which is in line with the smooth decay of electric field inside few-layer boron nitride revealed by the first-principles calculations. Raman characteristics: Raman spectroscopy has been a useful tool for studying various 2D materials. Gorbachev et al. first reported the Raman signature of high-quality atomically thin boron nitride in 2011. and Li et al. However, the two reported Raman results of monolayer boron nitride did not agree with each other. Cai et al., therefore, conducted systematic experimental and theoretical studies to reveal the intrinsic Raman spectrum of atomically thin boron nitride. It reveals that atomically thin boron nitride, without interaction with a substrate, has a G band frequency similar to bulk hexagonal boron nitride. Still, strain induced by the substrate can cause Raman shifts. Nevertheless, the Raman intensity of the G band of atomically thin boron nitride can be used to estimate layer thickness and sample quality. If you are looking for high quality, high purity, and cost-effective Boron nitride, or if you require the latest price of Boron nitride, please feel free to email contact mis-asia.

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