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HomeAnswerDomestic Research on Bismuth Telluride Thermoelectric Materials

Domestic Research on Bismuth Telluride Thermoelectric Materials

P-type bismuth telluride-based thermoelectric materials was prepared using various processes such as zone melting, mechanical alloying, spark plasma sintering (SPS), and hot pressing. Different thermoelectric performance parameters, including electrical conductivity, were measured at temperatures ranging from 300 to 500 K σ), Seebeck coefficient α), And thermal conductivity κ); the effect of the preparation process on thermoelectric properties was studied. The results showed that the performance excellence value ZT of the prepared bulk materials was improved to varying degrees compared to the exact composition of zone melting crystals. Among them, using the zone melting method combined with SPS technology can obtain the bulk materials with the best thermoelectric properties, with a ZT value of 1.15. Thermoelectric materials can directly convert thermal and electrical energy and are less affected by the size of the energy conversion system. They are used for cooling small electronic equipment, Waste heat power generation, and microsensors have significant application prospects. Especially for wearable and flexible electronic products that are developing rapidly, thermoelectric materials can utilize the temperature difference between the skin and the environment to generate electricity or monitor temperature and other information in real-time. New application requirements have led to a gradual trend in the research direction of thermoelectric materials and devices toward flexibility, miniaturization, and high-density integration. Compared to traditional bulk thermoelectric materials, thermoelectric thin film materials are easier for flexibility and miniaturization and can further improve their thermoelectric properties through microstructure control. They are gradually becoming a research hotspot in this field. Based on 3 ω Transient heat flow method and the steady-state silicon nitride cantilever method are two methods for measuring the thermal conductivity of thin film materials. Two complete sets of thermal conductivity characterization platforms for thin film materials have been developed for the carbon nanotube bismuth telluride hybrid lean film material system studied. Technical means for sample preparation, such as high-precision silicon nitride physical masks and self-supporting light film sample transfer methods, have been developed. Relevant work has obtained one authorized invention patent and four utility model patents. If you are looking for high quality, high purity and cost-effective bismuth telluride, or if you require the latest price of bismuth telluride, please feel free to email contact mis-asia.

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