The bandgap in TMDs can be adjusted by changing the number of layers, which allows tuning of the optical response over a broad range of wavelengths, from the ultraviolet (UV)-visible to NIR. Furthermore, the high carrier mobility and strong interaction of TMDs with light make these 2D materials interesting for optoelectronic applications. Atomically thin layered TMDs, including MoS2, MoSe2, MoTe2 WS2, WSe2/WS2, WSe2, WSe2/h-BN, HfS2, ReS2, ReSe2, SnS2, and WSe2/SnSe2, and the doped MoS2 heterostructures have been studied for use in broadband photodetectors. Among 2D TMDs, MoS2 atomic layers have also been extensively investigated for developing MoS2 hybrid heterostructure-based photodetectors in combination with other materials, including MoS2/Si, AuNPs/MoS2, MoS2/WS2, MoS2/WSe2, graphene/MoS2/WSe2/graphene, MoTe2/MoS2, GaTe/MoS2, PdSe2/MoS2, MoS2/graphene, and MoS2/BP. The formation of hybrid heterostructures with other materials facilitates the modification of electronic and optoelectronic properties to improve the photoresponse of MoS2-based photodetectors. Several studies have demonstrated that the bandgap in MoS2 can be tuned by changing the number of layers (thickness) from 1.8 eV for monolayer MoS2 to 1.2 eV for multilayer MoS2. This strategy could be used to adjust the optical response of MoS2 over a broad spectral range. Mak et al. reported the strongest direct bandgap photoluminescence (PL) in monolayer (1L) MoS2, with the 1000-fold enhancement of the PL intensity compared with bilayer (2L) MoS2 as well as strong emergence of photoconductivity near the direct bandgap of 1.8 eV in monolayer MoS2 and approximately 1.6 eV in bilayer MoS2. These results confirm the occurrence of an indirect to direct bandgap transition using photoconductivity spectroscopy. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.