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HomeAnswerPreparation and properties of carbon nanotube-Bismuth telluride composite thermoelectric thin film materials...

Preparation and properties of carbon nanotube-Bismuth telluride composite thermoelectric thin film materials and devices

Further, plasma was used to pretreat the surface of carbon nanotube films to explore the influence mechanism of the two-phase interface on the properties of the composite films. Then the two-phase interface of the composite films was modified to improve the thermoelectric properties. After plasma treatment, the interface of the hybrid movie becomes rough. The phonons in the rough interface will generate diffuse reflection, significantly reducing the heat transfer efficiency of the pretreated samples compared with the untreated samples. The interface change has little effect on the transport of the carriers. It thus achieves the acoustic-electrolytic coupling transmission in the material system, and the thermoelectric property of the composite film is about 50%. The promotion is based on optimizing the material's structure and performance, and the microdevices' design and preparation are carried out. To solve the contradiction between the optimal in-plane performance direction of the thermoelectric thin film material and the common out-of-plane temperature difference direction in practical application scenarios, two design schemes of the suspended self-support and PDMS flexible deformation base are proposed, and two kinds of micro thermoelectric thin film devices are prepared. Their thermoelectric conversion performance is improved Line representation. The self-supported suspended thermoelectric device is a micro-thin-film thermoelectric device with a planar structure.

Regarding power generation, the thermoelectric material has an open-circuit voltage of 15mV and a short-circuit current of ~ 60μA when ΔTg reaches 20K. The maximum Pgmax is 0.225μW. Cooling: The thermoelectric device can achieve a cooling temperature difference of about 7.5 degrees at room temperature and provide a full cooling power of ~ 89 μW at 300K. PDMS flexible deformation base thermoelectric thin film devices are deformable flexible devices. By stretching PDMS, two-dimensional flexible materials are transformed into three-dimensional arch thermoelectric devices to realize the fabrication of flexible micro thermoelectric thin film devices. In the atmosphere where the temperature of the hot station is 50 degrees, the open-circuit voltage of the device is 0.4mV, which initially meets the requirements of the sensor. The temperature difference and electrode connection scheme must be further improved for higher performance. If you are looking for high quality, high purity and cost-effective bismuth telluride, or if you require the latest price of bismuth telluride, please feel free to email contact mis-asia.

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