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HomeAnswerStrategies for boosting the performance of MoS2 photodetectors using hybrid heterostructures two

Strategies for boosting the performance of MoS2 photodetectors using hybrid heterostructures two

Diverse MoS2 hybrid heterostructures with other inorganic, organic, and 2D nanomaterials have been developed to extend the light absorption wavelengths and improve the charge transfer process. For example, Xiao et al.178 reported reduced graphene oxide (RGO)–MoS2/pyramid Si heterostructure-based photodetectors where 3L graphene and indium–gallium (In–Ga) alloy were used as top and bottom electrodes, respectively. Fig. 4 shows a schematic illustration of the 3D RGO–MoS2/pyramid Si heterojunction-based photodetector, a comparison of the absorption spectra of planar and pyramid Si, RGO (also referred to as rGO), and RGO–MoS2/Si heterojunction devices, photosensitivity between 350 to 1100 nm wavelength region, photocurrent switching behavior under light illuminations, wavelength and laser-power dependent photoresponsivity (R) and specific detectivity (D*) of RGO–MoS2/Si heterojunction-based photodetector under zero bias voltage and wavelength range covered by the RGO–MoS2/pyramid Si heterojunction-based photodetector. The photovoltage of the RGO–MoS2/Si heterojunction photodetector increased from 180 to 276 mV as the light power intensity was increased from 100 nW to 1 mW, which evidenced the self-powered operation of this photodetector at zero bias voltage (V = 0). Furthermore, heterojunction photodetector showed the photoresponsivity of 21.8 A W−1 and detectivity of 3.8 × 1015 Jones at an 880 nm wavelength and a very broad optical spectrum range from the UV (350 nm) to mid-IR (4.3 μm). The self-driven heterojunction photodetectors exhibited photoresponsivity values of 2 to 11 mA W−1 and detectivity of 0.4 to 2 × 1012 Jones in the NIR–MIR (1870–4290 nm) range. The origin of high photoresponse over such an ultra-broadband range lies in several factors. In this RGO–MoS2/pyramid Si heterostructure, the light absorption was increased by the pyramid Si structure, while highly conductive RGO assisted in enhancing the charge separation and transfer process. The RGO–MoS2/Si heterojunction shows maximum photoresponse at 800–900 nm. The light-harvesting by nanostructured pyramid Si surface was found to be 20% higher compared to planar Si in the 400 to 1000 nm spectral range. The photocurrent of the RGO–MoS2/pyramid Si device (5.3 μA) was five times higher than that of the RGO–MoS2/planar Si device (1.1 μA) at 808 nm. Both pyramid and planar Si substrates barely absorb light over 1100 nm due to the bandgap of 1.1 eV. You were integrating the pyramid Si nanostructured surface assisted in extending the light absorption of the heterojunction in the NIR range. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.

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