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The phototransistors utilizing hybrid MoS2

The phototransistors utilizing hybrid MoS2/PbS QDs were fabricated by Pak et al.. The PbS QDs were surface modified with n-type tetrabutylammonium iodide (TBAI) and p-type 1,2-ethanedithiol (EDT) ligands to develop p–n junctions. The MoS2/PbS-TBAI/PbS-EDT hybrid device showed a photoresponsivity of 5700 ± 71.2 A W−1 for a single-junction device and 6120 ± 96.9 A W−1 for a double-junction device at an incident laser power of 20 pW. The photocurrent rise time of 40 ms for the single-junction device was reduced to 950 μs for the double-junction device. The efficient charge transfer occurring in the MoS2/PbS QD hybrid photodetector yielded a maximum photoresponsivity of 5.4 × 104 A W−1 and a 1 × 1011 Jones detective. High photoresponsivity of 2570 A W−1 and detectivity of 2.2 × 1012 Jones at 635 nm in a few-layer MoS2 photodetector has been demonstrated under zero gate voltage with the use of a poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate. This MoS2/P(VDF-TrFE) hybrid photodetector also showed photodetection over the 0.85 μm to 1.55 μm spectral region and excellent stability over 90 000 repeated cycles of operation. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.

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