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HomeAnswerThermoelectric Properties of Ti Doping in Bismuth Telluride

Thermoelectric Properties of Ti Doping in Bismuth Telluride

The Ti-doped Bi 2 Te 3 with concentrations 1, 3, and 5 in % Ti were synthesized using a simple powder metallurgy method. It is revealed that the optimum Ti addition in parent material changes the conduction type from undoped n-type into p-type with 1 % Ti concentration. However, the Ti addition above 1 % decreases the absolute Seebeck coefficient—furthermore, the conduction type returns to w-type at 5 % Ti addition. A 70 % and 74 % reduction in the absolute Seebeck coefficient and the electrical resistivity value were found in 5 % Ti-doped at near room temperature. Even though the 5 % Ti doping concentration does not give an enhancement effect in the power factor (PF) value at near room temperature, there is a possibility of 5 % Ti-doped achieves a higher PF value than undoped Bi 2 Te 3 at the higher temperature above 500 K. N-type bismuth telluride (Bi2Te3) based thermoelectric (TE) fibers were fabricated by thermal drawing and Bridgman annealing. The influence of Bridgman annealing on the TE properties of n-type Bi2Te3-based TE fibers was studied. The Bridgman annealing enhanced the electrical conductivity and Seebeck coefficient by increasing crystalline orientation and decreasing detrimental elemental enrichment. The TE performance of n-type Bi2Te3-based TE fibers was improved significantly by enhancing the power factor. Hence the power factor increased from 0.14 to 0.93 mW/mK2, and the figure-of-merit value is from 0.11 to 0.43 at ~300 K, respectively. If you are looking for high quality, high purity, and cost-effective Bismuth telluride, or if you require the latest price of Bismuth telluride, please feel free to email contact mis-asia.

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