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The Applications of Gallium Nitride

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Gallium Nitride Powder


Galium nitride, an inorganic material with the chemical name GaN is made from a mixture of gallium and nitrogen. It’s a semiconductor with a high bandgap, and is used widely in light emitting diodes. It has high hardness and a structure similar to wurtzite. It has an energy gap of 3.4 electrons. Therefore, it can be used to make high-powered, high-speed optoelectronic devices. Galium nitride is a good choice for violet laser diodes. It can also be used in nonlinear semiconductor-pumped, solid-state lasers (Dide-pumped solid–state laser), which produces violet (405nm).

Here are some of the key features

Gallium Nitride Powder

GaN, a stable compound with a hard high melting temperature material of around 1700°C, is very strong and durable. GaN exhibits the highest degree of ionization (0.5-0.43) among III-V compounds. GaN crystals are hexagonal in shape and have an ionization rate of 0.5 to 0.43 at atmospheric pressure. The atomic volume of GaN crystals is half the that of GaAs, with 4 atoms each cell. Due to its excellent hardness it makes a very good coating protection material.

1. Chemische properties

GaN at room temperature is insoluble with water, acids, and bases but it dissolves quickly in hot alkaline solution. For defect detection, GaN crystals of low quality can be damaged by H2SO4 (NaOH), H2SO4 (H3PO4) and H2SO4 (H2SO4). GaN has unstable properties at high temperatures and can be corroded by HCL, H2SO4 or H2gas. It is more stable with N2 gas.

2. The electrical characteristics

These are the most important factors that affect the design. GaN that has been unintentionally doped is always n-type. In all cases the electron concentration for the highest quality sample is 4×1016/cm3. Preparations of P-type materials are usually highly compensated. Research in this field has attracted many groups. Nakamura was one of them. He reported that at liquid nitrogen and room temperatures, the GaN mobility data is highest. These electron carrying Subconcentrations were n=4×1016/cm3 or n=8×1015/cm3. In recent years, the reported electron concentration values for MOCVD-deposited GaN sheets are 4×1016/cm3,1016/cm3 while results from plasma-activated MOBE are 8×103/cm3,1017/cm3. Controlling the carrier concentration of undoped carriers can be done in the 1014-1020/cm3 range. Additionally, doping can be controlled using the P-type process, Mg low-energy electron laser irradiation, or thermal annealing.

View Gallium Nickel GaN powder, CAS 2561797-4

Gallium Nitride Pulver is used in a variety of applications

GaN materials have low heat generation rates and high breakdown electrical fields. They are an ideal material for high-temperature electronic devices, as well high frequency microwave devices. Many GaN heterostructures can now be grown thanks to MBE technology, breakthroughs in important thin-film growth techniques, and progress in GaN material application. GaN materials have allowed the fabrication of new GaN devices like Metal Field Effect Transistor, Heterojunction Field Effect Transistor and Modulation Doped Field Effect Transistor. AlGaN/GaN has high electron mobility (2000cm2/v*s), high saturation speed (1x107cm/s), low dielectric constant and it is preferred for making microwave device; GaN. The substrate is 3.4eV wide and heat dissipation is excellent, which makes the device suitable to operate under high power conditions.

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