1. Ubume beCrystal kunye nePolytypism yeSilicon Carbide
1.1 Cubic kunye neHexagonal Polytypes: Ukususela kwi-3C ukuya kwi-6H kunye nePhambili
(IiCeramics zeSilicon Carbide)
I-silicon carbide (SiC) yiceramic ebambelele ngokudibeneyo eyenziwe ngesilicon kunye neeathom zekhabhoni ezimiselwe kwi-tetrahedral sychronisation., ukudala enye yeenkqubo ezinzima kakhulu ze-polytypism kwizinto zesayensi.
Ngokungafaniyo neekeramics ezininzi ezinesakhelo sekristale esizimeleyo, I-SiC ikhona ngaphezulu 250 iipolytypes ezaziwayo-kakuhle– Ulandelelwano lweemfumba olwahlukileyo lwee-bilayers ze-Si-C ezivaliweyo ecaleni kwe-c-axis– ezahlukeneyo ukusuka cubic 3C-SiC (ekwabizwa ngokuba yi-β-SiC) ukuya kwi-hexagonal 6H-SiC kunye ne-rhombohedral 15R-SiC.
Enye yeepolytypes eziqhelekileyo ezisetyenziswa kwizicelo zoyilo yi-3C (cubic), 4H, kunye ne6h (zombini zinehexagonal), ngalinye libonisa kancinci ezahlukeneyo izakhiwo band electronic kunye conductivities thermal.
3C-SiC, kunye nesakhelo se-zinc blende yayo, inelona gap limxinwa (~ 2.3 eV) kwaye iqhele ukwandiswa kwii-silicon substrates zezixhobo ze-semiconductor, ngelixa i-4H-SiC ibonelela ngokuguquguquka kwe-electron ephawulekayo kwaye ithandwa kwizixhobo zombane zamandla aphezulu.
Umanyano oluluqilima lwe-covalent kunye nobume bendlela yeSi– Ibhondi inika ukuqina okukhethekileyo, ukhuseleko thermal, kunye nokumelana nokutyibilika kunye nohlaselo lwekhemikhali, ukwenza iSiC ilungele usetyenziso olugqithisileyo lokusingqongileyo.
1.2 Imiba, Doping, kunye neDigital Residence
Nokuba ibubucukubhede besakhiwo sayo, I-SiC inokujongwa ukufumana zombini uhlobo lwe-n kunye nohlobo lwe-p-ukuqhuba, ukuvumela ukusetyenziswa kwayo kwizixhobo ze-semiconductor.
I-nitrogen kunye ne-phosphorus zisebenza njengegalelo kungcoliseko, ukwazisa ii-electron ngqo kwibhendi yothumelo, ngelixa i-aluminiyam yobunzima obulula kunye ne-boron isebenza njengabamkeli, ukuvelisa imingxuma kwibhendi ye-valence.
Nangona kunjalo, Ukuphumelela kohlobo lwe-p-doping kuthintelwe ngamandla amakhulu okuvula, ngakumbi kwi-4H-SiC, ebeka imiqobo kuyilo lwesixhobo se-bipolar.
Iziphene zomthonyama ezifana nokuphosa izikrufu, imibhobho, kunye neempazamo zokubeka imfumba zinokuwenza buthathaka ukusebenza kwesixhobo ngokusebenza njengezixhobo zokudibanisa kwakhona okanye izifundo ezivuzayo, ifuna inotshi ephezulu yekristale yophuhliso lwezicelo zombane.
Umsantsa omkhulu (2.3– 3.3 I-eV ixhomekeke kwipolytype), indawo yombane yokusilela okuphezulu (~ 3 MV/cm), kunye ne-thermal conductivity egqwesileyo (~ 3– 4 W/m · K ye-4H-SiC) yenza i-SiC iphakame kakhulu kune-silicon kubushushu obuphezulu, amandla ombane aphezulu, kunye nezixhobo ze-elektroniki ezisebenza rhoqo.
2. Ukuphatha kunye noYilo lweMicrostructural
( IiCeramics zeSilicon Carbide)
2.1 Ubuchwephesha beSintering kunye noXinaniso
I-silicon carbide ngokwemvelo kunzima ukuyixina ngenxa yokuqina kwayo okuqinileyo kunye nokunciphisa i-self-diffusion coefficients., idinga iindlela ezintsha zokusetyenzwa ukuze ifumane ingxinano epheleleyo ngaphandle kwezongezo okanye ngoncedo oluncinci kakhulu lwe-sintering.
Ukuntywila okungenaxinzelelo kwi-submicron ye-SiC powders kunokwenzeka ngokuphuculwa kwe-boron kunye nekhabhoni, ekhuthaza ukuxinana ngokususa iileya zeoksidi kunye nokuphucula ukusasazwa kombuso oqinileyo.
Ukutyhala ngokufudumeleyo kusebenza uxinzelelo lwe-uniaxial ngexesha lokufudumeza ikhaya, ukuvumela ukuxinana okupheleleyo kumanqanaba obushushu ancitshisiweyo (~ 1800– 2000 °C )kunye nokuvelisa i-cone-grained, amacandelo aphezulu-amandla afanelekileyo ekunciphiseni izixhobo kunye nokubeka kwiindawo.
Ngeemilo ezinkulu okanye ezinzima, ukudibanisa impendulo kusetyenziswa, apho iipreforms zekhabhoni ezirhabaxa zingenwa ngesilicon etyhidiweyo e ~ 1600 °C, ukwenza i-β-SiC kwindawo enokucutheka komda.
Nangona kunjalo, i-silicon eshiyekileyo yeendleko (~ 5– 10%) uhlala kwi-microstructure, ukunciphisa ukusebenza kakuhle kobushushu kunye nokumelana ne-oxidation ngasentla 1300 °C.
2.2 IMveliso eyoNgezelelweyo kunye neNgcaciso yeMilo ekufutshane ne-Net-Shape
Ukuphumelela kwangoku kwimveliso eyongezelelweyo (AM), ngokukodwa i-jetting ye-binder kunye ne-stereolithography usebenzisa i-SiC powders okanye iipolima ze-preceramic, vumela ukwenziwa kweejometri ezintsonkothileyo ebezingafumaneki ngaphambili ngeendlela eziqhelekileyo.
Kwi-polymer-derived ceramic (PDC) iindlela, Ulwelo lwangaphambili lwe-SiC lwenziwa ngoshicilelo lwe-3D kwaye emva koko lufakwe kwi-pyrolyzed kwi-heats ukuvelisa i-amorphous okanye i-nanocrystalline SiC., idla ngokufuna ukuxinana ngakumbi.
Obu buchule buthoba amaxabiso omatshini kunye nenkunkuma yemveliso, ukwenza iSiC ifumaneke ngakumbi kwi-aerospace, zenyukliya, kunye nezicelo zokutshintshiselana ezifudumeleyo apho iiplani ezintsonkothileyo ziphucula ukusebenza kakuhle.
Izenzo zasemva kokulungiswa ezifana nokungeniswa komphunga wekhemikhali (CVI) okanye ulwelo lwe-silicon (LSI) ngamanye amaxesha zisetyenziselwa ukuphucula ingxinano kunye nokuzinza koomatshini.
3. Oomatshini, Thermal, kunye Nocikizeko lokusiNgqongileyo
3.1 Amandla, Ukuqina, kunye nokusebenzisa i-Resistance
I-silicon carbide ibeka phakathi kwezona mveliso zinzima ezaziwayo, ngokuqina kwe-Mohs ye ~ 9.5 kunye nokuqina kweVickers okugqwesileyo 25 Inqaku eliphakathi, ukuyenza ikhuseleke kakhulu kwi-abrasion, ukuqhekeka, kunye nokukhuhla.
Amandla ayo e-flexural ngokubanzi aqala ukusuka 300 ukuya 600 MPa, kuxhomekeke kwindlela yokulungisa kunye nobukhulu beenkozo, kwaye igcina ukuqina kumaqondo obushushu ukuya kuthi ga 1400 ° C kwindawo epholileyo.
Amandla okwaphuka, ngelixa uthozamile (~ 3– 4 MPa · m 1ST/ TWO), yanele kwizicelo ezininzi zoyilo, ngokukodwa xa idityaniswe nenkxaso yefiber kwiicomposites ze-ceramic matrix (Ii-CMCs).
Ii-CMC ezisekwe kwi-SiC zisetyenziswa kwiincakuba zeinjini yomoya, i-combustor linings, kunye neenkqubo zeziqhoboshi, apho babonelela ngogcino lweendleko zobunzima, ukusebenza kakuhle kwegesi, kunye nobomi benkonzo obude ngaphezu kwentsimbi elinganayo.
Ukunganyangeki kwayo okungaqhelekanga kwenza i-SiC ilungele amatywina, iibheringi, izinto zokumpompa, kunye nekhaka lebhola, apho ukuqina phantsi komthwalo ogqithisileyo ngoomatshini kubaluleke kakhulu.
3.2 I-Thermal Conductivity kunye noKhuseleko lwe-Oxidation
Enye yezona ndawo ziluncedo kakhulu zokuhlala okanye zentengiso zeSiC kukuqhuba kwayo okuphezulu kwe-thermal– malunga 490 W/m · K ye-single-crystal 4H-SiC kunye ne-~ 30– 120 W/m · K kwiintlobo ze-polycrystalline– ukuya ngaphaya kweentsimbi ezininzi kwaye yenze kube lula ukulahla ubushushu obusebenzayo.
Le propati yokuhlala ibalulekile kumbane wombane, apho izixhobo ze-SiC zivelisa ubushushu obuncinci benkunkuma kwaye zinokusebenza kuxinzelelo olukhulu lwamandla kunezixhobo ezisekelwe kwi-silicon.
Kumanqanaba obushushu aphakanyisiweyo kwiindawo ezine-oxidizing, I-SiC yenza i-silica ekhuselayo (SiO ₂) umaleko onciphisa i-oxidation eyongezelelweyo, inika ukuqina okuhle kwendalo kangangoko ~ 1600 °C.
Nangona kunjalo, kwiatmospheres ezityebileyo ngomphunga wamanzi, lo maleko unokuguquguquka njengeSi(OH)₄, okukhokelela ekuthotyweni okukhawulezileyo– umngeni ophambili kwizicelo ze turbine yegesi.
4. Usetyenziso oluPhezulu kuMandla, Izixhobo zombane, kunye ne-Aerospace
4.1 Izixhobo zoMbane zoMbane kunye neeGajethi zeSemiconductor
I-Silicon carbide iguqule amandla e-elektroniki ngokwenza ukuba kwenzeke izixhobo ezifana ne-Schottky diodes., Ii-MOSFETs, kunye nee-JFETs ezisebenza kumandla ombane aphezulu, iifrikhwensi, kunye namaqondo obushushu ngaphezu kothelekiso lwesilicon.
Ezi zixhobo zinciphisa ilahleko yamandla kwizithuthi zombane, ii-inverters zamandla ahlaziyekayo, kunye neemoto zombane ezithengiswayo, ukongeza kuphuculo lwamandla ehlabathi.
Ukukwazi ukubaleka kumanqanaba obushushu besiphambuka ngaphezulu 200 ° C ivumela iinkqubo zokupholisa ezilungelelanisiweyo kunye nokuthembeka kwenkqubo ephakanyisiweyo.
Ngaphaya koko, Ii-wafers ze-SiC zisetyenziswa njenge-substratum ye-gallium nitride (GaN) i-epitaxy kwi-high-electron-mobility transistors (IiHEMTs), ukudibanisa iingenelo zazo zombini i-wide-bandgap semiconductors.
4.2 Inyukliya, I-Aerospace, kunye neZixhobo zokubona
Kwizityalo zamandla eathom, I-SiC yeyona nto iphambili ekugqunyweni kwamafutha okumelana neengozi, apho ukufunxwa kwayo kuncitshisiwe ineutron cross-icandelo, ukumelana nemitha, kunye nobushushu obuphezulu buphucula ukhuseleko kunye nokhuseleko kunye nokusebenza kakuhle.
Kwi-aerospace, Iikhompositi ze-SiC ze-fiber-reinforced zisetyenziswa kwii-injini ze-jet kunye neemoto ze-hypersonic ngenxa yobunzima bazo kunye nokuzinza kwe-thermal..
Ngaphaya koko, Izipili ze-SiC ezigudileyo zisetyenziswa zandulela iiteleskopu ngenxa yokuqina kwazo okuphezulu ukuya kuxinaniso., ukuzinza kwe-thermal, kunye nokugudisa uburhabaxa be-nanometer.
Isishwankathelo, I-silicon carbide ceramics imela ilitye eliphambili lezinto eziphambili zangoku, ukudibanisa oomatshini ababalaseleyo, thermal, kunye neempawu zedijithali.
Ngolawulo oluthile lwe-polytype, microstructure, kunye nokuphatha, I-SiC ihlala ivumela ukuveliswa kweteknoloji kumandla, uthutho, kunye nobunjineli bokubeka ngokugqithisileyo.
5. Umthengisi
I-TRUNANO ngumthengisi we-Spherical Tungsten Powder ene-over 12 iminyaka yamava kwi-nano-building energy yogcino kunye nophuhliso lwe-nanotechnology. Iyayamkela intlawulo ngekhadi letyala, T/T, I-West Union kunye ne-Paypal. I-Trunnano iya kuthumela iimpahla kubathengi phesheya ngokusebenzisa i-FedEx, DHL, ngomoya, okanye ngolwandle. Ukuba ufuna ukwazi ngakumbi ngeSpherical Tungsten Powder, nceda uzive ukhululekile ukuqhagamshelana nathi kwaye uthumele umbuzo([email protected]).
Iithegi: i-silicon carbide ceramic,iimveliso ze-silicon carbide ceramic, i-ceramic yoshishino
Onke amanqaku kunye nemifanekiso avela kwi-Intanethi. Ukuba kukho nayiphi na imiba ye-copyright, nceda uqhagamshelane nathi ngexesha lokucima.
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