For example, Kang et al. demonstrated that the field-effect mobility increased from 28.75 cm2 V−1 s−1 to 142.2 cm2 V−1 s−1, and the photoresponsivity increased from 219 A W−1 to 5.75 × 103 A W−1 for APTES/MoS2 hybrid phototransistors after aminopropyltriethoxysilane (APTES) doping of monolayer MoS2. The 24.5-fold increase in the photoresponsivity of the APTES/MoS2 photodetector resulted from the enhanced photocurrent after APTES doping. The photoresponsivity of APTES/MoS2 devices reached 1212.8 A W−1 at a gate bias voltage of Vg = 0 and a Vds of 5 V for a 520 nm wavelength under an incident power of 5.8 mW cm−2. Yu et al. used mechanically exfoliated monolayer MoS2 nanosheets sensitized with rhodamine 6G (R6G) organic dye to develop a photodetector with an enhanced photoresponse. The dye-sensitized MoS2/R6G-based photodetector showed a photoresponsivity of 1.17 A W−1, a detective of 1.5 × 107 Jones, an EQE of 280% at 520 nm under an incident power of 1 μW and a photoresponse between wavelengths of 405 and 980 nm arising from charge transfer from the rhodamine 6G dye to monolayer MoS2. In addition to photosensitive dyes, the high-κ Al2O3 dielectric has been used for enhancing the photoresponse of MoS2 photodetectors. Huang et al. used zinc phthalocyanine (ZnPc) organic dye on the surface of monolayer MoS2 to create a charge transfer interface. The dark and photocurrent of the dye-sensitized ZnPc-treated MoS2 photodetectors increased by 103 to 105 times after a 30 nm thick top Al2O3 passivation layer was used. The photoresponsivity of 281 and 1.74 A W−1 were recorded for the bare MoS2 and ZnPc-treated MoS2 devices at 532 nm under a light intensity of 0.07 mW cm−2, respectively. The photoresponse of the Al2O3-passivated MoS2/ZnPc hybrid photodetector was significantly improved: the photoresponsivity increased from 430 A W−1 to 1.4 × 104 A W−1 as the light intensity changed from 3.64 mW cm−2 to 0.07 mW cm−2 under a gate bias of 40 V, respectively. The photoresponse of the MoS2/ZnPc hybrid device was 100 times faster than that of a pristine MoS2 device. Wu et al. demonstrated a photoresponsivity of 2.7 × 104 A W−1 for a MoS2 photodetector using an Al2O3/ITO/SiO2 substrate, which increased the light absorption of MoS2 thin films. The high-κ Al2O3 is dielectric also yielded a current Ion/Ioff ratio of 109 under a 2 V gate bias voltage, a mobility of 84 cm2 V−1 s−1, and a subthreshold swing of 104 mV dec−1. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.