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HomeAnswerAnother common technique of improving the performance of MoS2 photodetectors is via...

Another common technique of improving the performance of MoS2 photodetectors is via chemical doping

For example, Kang et al. demonstrated that the field-effect mobility increased from 28.75 cm2 V−1 s−1 to 142.2 cm2 V−1 s−1, and the photoresponsivity increased from 219 A W−1 to 5.75 × 103 A W−1 for APTES/MoS2 hybrid phototransistors after aminopropyltriethoxysilane (APTES) doping of monolayer MoS2. The 24.5-fold increase in the photoresponsivity of the APTES/MoS2 photodetector resulted from the enhanced photocurrent after APTES doping. The photoresponsivity of APTES/MoS2 devices reached 1212.8 A W−1 at a gate bias voltage of Vg = 0 and a Vds of 5 V for a 520 nm wavelength under an incident power of 5.8 mW cm−2. Yu et al. used mechanically exfoliated monolayer MoS2 nanosheets sensitized with rhodamine 6G (R6G) organic dye to develop a photodetector with an enhanced photoresponse. The dye-sensitized MoS2/R6G-based photodetector showed a photoresponsivity of 1.17 A W−1, a detective of 1.5 × 107 Jones, an EQE of 280% at 520 nm under an incident power of 1 μW and a photoresponse between wavelengths of 405 and 980 nm arising from charge transfer from the rhodamine 6G dye to monolayer MoS2. In addition to photosensitive dyes, the high-κ Al2O3 dielectric has been used for enhancing the photoresponse of MoS2 photodetectors. Huang et al. used zinc phthalocyanine (ZnPc) organic dye on the surface of monolayer MoS2 to create a charge transfer interface. The dark and photocurrent of the dye-sensitized ZnPc-treated MoS2 photodetectors increased by 103 to 105 times after a 30 nm thick top Al2O3 passivation layer was used. The photoresponsivity of 281 and 1.74 A W−1 were recorded for the bare MoS2 and ZnPc-treated MoS2 devices at 532 nm under a light intensity of 0.07 mW cm−2, respectively. The photoresponse of the Al2O3-passivated MoS2/ZnPc hybrid photodetector was significantly improved: the photoresponsivity increased from 430 A W−1 to 1.4 × 104 A W−1 as the light intensity changed from 3.64 mW cm−2 to 0.07 mW cm−2 under a gate bias of 40 V, respectively. The photoresponse of the MoS2/ZnPc hybrid device was 100 times faster than that of a pristine MoS2 device. Wu et al. demonstrated a photoresponsivity of 2.7 × 104 A W−1 for a MoS2 photodetector using an Al2O3/ITO/SiO2 substrate, which increased the light absorption of MoS2 thin films. The high-κ Al2O3 is dielectric also yielded a current Ion/Ioff ratio of 109 under a 2 V gate bias voltage, a mobility of 84 cm2 V−1 s−1, and a subthreshold swing of 104 mV dec−1. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.

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