Physical layer deposition (PVD) is a bottom-up technique that includes ion implantation, like molecular beam epitaxy (MBE). The method can be applied only to thin layers of MoS2, and the resulting grain sizes are variable. Chemical vapor deposition (CVD) is applied to thin and thick layers, where Mo is laid over a substrate and Sulfur vapor passes over it. This method has good quality but low yield. The atomic layer deposition (ALD) method fabricates thick and thin films. The method is considered efficient, and the layers have fewer impurities that can be used in different applications, including electronics and sensors. MoS2 layers can be synthesized with the help of chemical solutions, using hydrothermal and solvothermal reactions wherein both cases Mo and S react in an aqueous solution above the boiling point and a nonaqueous solution at high temperature, respectively. The size and shape of the layers can be controlled where we can get powder and thin films of MoS2 by this method. It is considered cheap and scalable. Another approach to avoid the drawbacks of exfoliation and intercalation or liquid exfoliation, like low electrical performance (low mobility of 0.3-0.4 square centimeters per volt per second and low on/off ratios ~10–100), is using electrochemical intercalation. The method involves quaternary ammonium molecules into 2D crystals, with mild sonication and exfoliation techniques. The technique gives high-performance MoS2 nanosheets with 10 square centimeters per volt per second mobility and on/off ratios of 106. Table 3 summarizes some synthesis techniques that are already known until now. If you are looking for high quality, high purity, and cost-effective Molybdenum disulfide, or if you require the latest price of Molybdenum disulfide, please feel free to email contact mis-asia.