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HomeMaterialsNitride PowderHigh Purity Gallium Nitride GaN powder CAS 25617-97-4, 99.99%

High Purity Gallium Nitride GaN powder CAS 25617-97-4, 99.99%

Gallium Nitride, or GaN, is a mechanically and heat-resistant semiconductor compound. In its pure form, it has a band-gap of 3.4 eV. Purity: 99.99%

Gallium Nitride GaN:

Gan Gallium Nitride

This is a semiconductor compound that is mechanically hard and has high thermal conductivity. In its pure form, it has a band-gap of 3.4eV.

Gallium Nitride has the following properties:

CAS Number
CAS 2561797-4


CAS number

Yellow Powder

X ray Diffraction
Conforms to Structure

Trance Metal Analysis
200 ppm

This material is suitable for satellite solar cells arrays due to its low sensitivity (with another III-nitride group). This equipment can also be used for military or space applications because it is resistant to radiation.

Since the

Gallium nitride transistor

As they are able to operate at higher temperatures, and with a higher voltage than the Arsenide (GaAs), they make an ideal power amplifier at microwave frequencies. GAN can also be used to provide a feature that is hoped for in THz devices. GaN has been revealed to be a candidate for 5G cell base stations due to its high voltage breakdown and power density.

GaN materials research and applications are at the forefront of global semiconductor research. It is a new material for developing semiconductor devices, optical electronics and other semiconductor materials, such as SiC or diamonds. These are also known as first-generation GE, Si-A third-generation semiconductor after semiconductor material, GaAs second-generation, InP composite semiconductor material. It has a large direct bandgap and a strong atomic connection, as well as high thermal conductivity (almost no sour corrosive corrosion), high chemical stability, etc. Applications in high-temperature, high-power devices, microwaves with high frequency, have broad prospects.

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Gallium Nitride powder

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Gallium Nitride Product Performance

GaN powder is a versatile material with a large direct bandgap. It also has strong atomic bonds and high thermal conductivity.

Technical Parameters of Gallium Nitride GaN:

Product Name MF Purity Particle Size Melting Point Density Color
gallium nitride GaN 99.99% -60 Mesh 1700 6.1g/mL,25/4 light yellow

Chemical Composition and Properties of Gallium Nitride GaN:

GaN Curiosity You can also find us on Twitter @Ni Zn Al Na The following are some of the ways to get in touch with us Ca
99.99% 0.0005% 0.0003% 0.0005% 0.001% 0.0005% 0.0003% 0.0005% 0.005%

What is

Gallium Nitride GaN Powder


Group III-V gallium nitride

Gan semiconductor

The compound has a high resistance to corrosion. It is because of a strong bond that exists between Ga and Nitrogen, the compound is corrosion resistant. Ballium Nitride is a direct bandgap (bandgap=3.4 with fibrous mineral structure) semiconductor and is a suitable material to make corrosive ambient-light emitting devices. Gallium Nitride is made by reacting Ga2O3 and NH3 together at high temperatures of around 1000 deg C.

Ga 2 O 3 + 2 NH 3 – 2 GaN + 3H 2 O

A compound organometallic containing Ga with a nitrogen atom may also be formed by the chemical phase. GaN is unaffected by acidic and alkaline environments.


Gallium Nitride GaN Powder


Since 1990 GaN has become a common light-emitting device (LED). Gallium nitride emits blue light which indicates it is a semiconductor with a direct III/V band gap.

Gallium Nitride Semiconductor

This is a great choice for high-power transistors, which can operate at high temperatures. Blu-ray disk reading. It is also used for lasers and photonics. In the near future, sensor technology will use gallium nitride.

1. GaN is also used in smaller, full-color panels for trains and buses. GaN-based leds are more efficient, and offer another option for blue and Green LEDs.

2. The use of gallium nitride in semiconductors is widespread, including electric vehicles and photovoltaics.

3. The 5G radiofrequency uses gallium nitride. Gallium nitride will gradually replace the silicon-based materials in the 5G field due to the increased demands for radio frequency energy and power consumption.

4. GaN can be used for fast charging mobile phones.

Gallium nitride charger

The use of

Gan technology

Its high-efficiency, compact size, and large power are key characteristics to the development of super-fast charger technology.

Gallium Nitride GaN powder – Packing & Shipping

The packaging we use depends on the amount of gadolinium nitride (GaN) powder.

Powder packaging of gallium nitride, GaN:

Vacuum packaging 100g,500g or 1kg/bag. 25kg/barrel.

Shipment of GaN powder, also known as gallium nitride:

As soon as payment is received, you can ship your order by sea, air or express.

Technology Co. Ltd., () is an established global chemical material manufacturer and supplier with more than 12 year’s experience in the production of high-quality nanomaterials. These include boride powders, nitride particles, graphite particles, sulfide particles, 3D printing materials, etc.

Contact us to send an inquiry if you’re looking for high quality gallium nitride. (


Gallium Nitride Properties

Alternative Names
gallium nitride powder, GaN, GaN powder, gallium mononitride

CAS Number

Compound Formula

Molecular Mass

Light Yellow Powder

Melting Point
1700 degC

Boiling Point

6.1 g/cm3

Solubility In H2O


Monoisotopic Mash

Aluminum Nitride Health & Safety Information

Sign Word

Hazard Statements

Hazard Codes

Risk Codes

Safety Declarations

RTECS Number

Transport Information

WGK Germany

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