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Bismuth Telluride – Property and Application |


What property does Bismuth Telluride have?


Bismuth telluride

The molecular formula of the powder is Bi2Te3. Bismuth telluride, an indirect band-gap semiconductor, has a band gap of 0.145eV at room temperature, electron mobility of 0.135m2/s (V*s) and hole mobility of 4.×10-2m2/s (V*s), and a coefficient of thermoelectric quality of 1.6×10-3/K.

Bismuth Telluride is a dense material with a density 7.8587g/cm3 at a melting temperature of 585degC. It is bound with covalent and ionic bonds. Bismuth telluride exhibits the characteristics of a topological insulate, allowing electrons flow freely over its surface.

Bismuth Telluride is prepared by the Bridgman Method, Zone Smelting Method, and Czochralski Method. Bismuth telluride, a semiconductor, has good thermal conductivity and a poor electrical conductivity.


What are the applications of Bismuth Teluride?

Bismuth-telluride-based semiconductors have high performance thermoelectric conversion in the low- and mid-temperature range. These materials are widely used to control temperature and for local refrigeration in microelectronics and computers. They have excellent application prospects in industrial heat recovery and thermoelectric energy generation.

By doping the alloy, phonons can be increased to reduce thermal conductivity and to optimize the carrier concentration to improve electrical performance. This will enhance the thermoelectric performance.

The dangers of bismuth-telluride are low but it can be fatal in large doses. The material is able to allow electrons on its surface to move at room temperatures without consuming energy, which can lead a significant increase in the chip’s operating speed.

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