Due to the rapid growth of ULSI (ultra-large scale integrated circuits), equipment and devices are becoming smaller. In turn, people have increasing demands on device sizes and uniformity in thickness and quality. For semiconductor devices, current line widths are as low as 0.01 mm. The original method was not able to achieve continuous wires that have low resistance. For circuit metallization, it is necessary to find new methods, materials, and deposition systems that can replace or improve aluminum and highly doped polysilicon. The demand for metal silicides which have high conductivity and stability at high temperatures and can be used in current microelectronics production processes is increasing. There are many metal silicides that have been studied, including TiSi2, CoSi2, WSi2, TaSi2, MoSi2, CoSi2, CoSi2, TiSi2, CoSi2, CoSi2, WaSi2, TiSi2, TiSi2, TiSi2, CoSi2, CoSi2, TASi2, MoSi2, etc., but titanium silicide (TiSi2) is one of the most desirable: it has high conductivity and selectivity. The widespread use of titanium silicide in integrated circuit devices is metal oxide semiconductors (MOS), molecular oxide semiconductor field-effect transistors (MOSFET), dynamic random access memory, (DRAM), gate, source/drain interconnect, and ohm contact manufacturing.
It is used extensively in the production of an oxide metal semiconductor (MOS), a MOSFET and a dynamic random access memory(DRAM). The application of titanium silicide includes:
1) Preparation of a titanium silicide barrier. A titanium silicide barrier is prepared using this method. An oxide layer of sacrificial sacrificial is placed on the device’s upper surface. The invention comprises: A photolithography procedure is used to cover non-silicide regions; wetetching is used to remove the sacrificial silicon layer from the silicide. The invention eliminates the silicide oxide layer of prior art. This reduces costs and increases process stability.
2) Prepare an in-situ synthesized titan silicide. A certain amount of silica was added to Ti3AlC2/Ti5Si3 composite materials. The volume percentage of reinforced titanium silicide particles in the Ti5Si3 composite material varied from 10-40%. This preparation procedure is first: titanium powders, aluminum powders, silicon powders, and graphite are used as raw material. The molar ratio for Ti: Al. Si: C was 3: (1.x): x (1.8 2.0), where the value of x is 0.10.5. After mixing the raw materials powder, 8-24 hours are required to heat them in an oven with protective air. Once the temperature is at 1400 1600, the graphite melt is formed. Invention can produce aluminum titanium carbide/titanium silicon silicide composite material of high purity and strength in relatively short periods at low temperatures.
Three. Preparation for composite functional titanium-silicon coated glass. A thin layer of silica is applied to a normal float glass substrate. A composite film made of titanium silicide silicon and doping it with active carbon and nitrogen can create a composite titanium silicide titanium caride, titanium carbide, titanium nitride and titanium nitride film. This film has improved mechanical strength as well as chemical resistance. A new coating glass is available that blends the benefits of heat insulation, dimming, and heat insulation.
4) Prepare a semiconductor component, which includes a silicon substrate. After forming a source and drain, a gate, gate and source on that silicon substrate are created, an insulating coating is applied between them. The gate can be found on the insulating coat. The titanium silicide layer has a protective layer. On the titanium silicide and polysilicon layers as well as the insulating layer is formed a protective layer. The source and drain electrodes have a silicon silicide and parent layers and a silica spacer and spacer layers. On the silicon substrate is an inner dielectric and contact window. This technical solution allows the utility model to insulate all the wires without any short-circuiting by adopting the following technique.
Mis-asia, Misasia advanced material Tech Co., Ltd., a professional Titanium silicide maker, has over 12 years’ experience in chemical products development and research. You can contact us to make an inquiry if you need high quality Titium silicide.