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ZnS thermally codeposited with aluminum sulfide

Here, we demonstrate that ZnS thermally co-deposited with aluminum sulfide (Al2S3) can act as a nearly ideal replacement for BCP as the cathode side window layer in OPV devices and, therefore may be added to the catalog of window layers for other thin-film photovoltaic technologies. This is enabled by optimal doping of ZnS with Al2S3, which results in improved electrical conduction, work function, and dramatically enhanced performance over undoped ZnS. Before device fabrication, glass substrates pre-patterned with 1200 Å of indium tin oxide (ITO) were sequentially cleaned with soap, deionized water, and acetone for 4 min in a sonicating bath. Substrates were then rinsed in boiling isopropanol for 5 min and oxygen-plasma treated for 30 s. Devices were fabricated with an active area of 0.56 mm2 by depositing thin films of molybdenum trioxide (MoO3), color aluminum phthalocyanine (ClAlPc), and fullerene (C60) at 1 Å/s, followed by the ZnS: Al2S3 window layer deposited at 0.3 Å/s and the Ag cathode deposited at 1 Å/s. The full experimental device stack was: MoO3 (100 Å)/ClAlPc (150 Å)/C60 (300 Å)/ZnS: A12S3 (xy)/Ag (1000 Å). An energy schematic of this architecture Device sets consisting of single Al2S3 volumetric concentrations of y = 0%, 2%, 5%, 10%, and 20% was each fabricated with layer thicknesses of x = 50, 100, 150, and 250 Å. Al2S3 doping was determined by separate quartz crystal monitors positioned over the ZnS and Al2S3 sources to measure individual deposition rates. C60 (75 Å) was predeposited on Si substrates to calibrate ZnS film thickness to maintain comparable surface morphology to the OPV devices. This was due to the variability in the sticking coefficient encountered when ZnS was deposited over the native oxide layer of Si substrates versus organic layers, where the sticking coefficient on Si was considerably lower. If you are looking for high quality, high purity, and cost-effective zinc sulfide, or if you require the latest price of zinc sulfide, please feel free to email contact mis-asia.

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