1. Astaamaha aasaasiga ah iyo Crystallographic Kala duwanaanshaha Silicon Carbide
1.1 Qaab dhismeedka atomiga iyo iskudhafan badan
(Budada Silicon Carbide)
Silikoon carbide (SiC) waa walax labanlaab ah oo ka samaysan silikoon iyo atamka kaarboon oo lagu rakibay shabag-sharafeed aad u deggan, lagu garto engegnaantiisa aan caadiga ahayn, dhaqdhaqaaqa kulaylka, iyo guryaha dijitaalka ah ee la dagan yahay.
Si ka duwan semiconductors-ka caadiga ah sida silicon ama germanium, SiC kuma jirto qaab dhismeed quraarad ah si kastaba ha ahaatee way soo ifbaxday 250 noocyo badan oo kala duwan– Noocyada kristaliinka ah ee ku kala duwan sida isku xigxiga ee silikoon-carbon bilayers oo ay weheliyaan dhidibka c.
Noocyada aadka u khuseeya waxay ka kooban yihiin 3C-SiC (cubic, qaabka zincblende), 4H-SiC, iyo 6H-SiC (labada geesood), Mid kastaa wuxuu si hoose u muujinayaa sifooyinka dhijitaalka ah iyo kulaylka ee kala duwan.
Waxaa ka mid ah, 4H-SiC ayaa si gaar ah loogu doorbiday aaladaha dhijitaalka ah ee awoodda sare leh iyo kuwa soo noqnoqonaya taas oo ay sabab u tahay dabacsanaanteeda elektarooniga ah iyo iska caabbinta hoose ee ka duwan noocyada kale ee badan..
Isku-xidhka covalent ee xooggan– oo ka kooban 88% covalent iyo 12% shakhsiyadda ionic– waxay bixisaa adkeysi farsamo oo cajiib ah, firfircoonaan la'aanta kiimikada, iyo iska caabinta waxyeelada shucaaca, samaynta SiC ku haboon habsocodka deegaan aad u daran.
1.2 Sifooyinka Elektarooniga ah iyo Kuleylka
Sarraynta elegtarooniga ah ee SiC waxay ka timaadaa faadhkeeda ballaadhan, Kaas oo u dhexeeya 2.3 eV (3C-SiC) ku 3.3 eV (4H-SiC), aad uga weyn silikoonka 1.1 eV.
Bannaanka weyni wuxuu suurtogal ka dhigayaa in qalabka SiC ay ku shaqeeyaan heerkul aad u sarreeya– sida ugu badan 600 ° C– iyada oo aan jirin jiil bixiyaha oo ka awood badan qalabka, xaddidaadda muhiimka ah ee aaladaha elektiroonigga ah ee silikoon-ku-saleysan.
Intaa waxaa dheer, SiC waxay leedahay awood sare oo koronto oo muhiim ah (~ 3 MV/cm), qiyaastii toban jeer ka badan silikoon, awood u yeelashada lakabyo qalafsan oo khafiif ah iyo jabinta sare ee danabyada qalabka korontada.
Heerarka kulaylka (~ 3.7– 4.9 W/cm · K loogu talagalay 4H-SiC) ka sare maray naxaasta, caawinta daadinta diirimaad hufan iyo hoos u dhigida shuruudaha nidaamyada qaboojinta adag ee codsiyada awooda sare leh.
Lagu daray xawli elektaroonig ah oo buuxa (~ 2 × 10 cm/s), Dhismayaashan ayaa suurtogal ka dhigaya in SiC-ku-yaal transistor-ku-salaysan iyo diodh-ku-salaysan ay dhaqso isu beddelaan, wax ka qabashada tamarta sare, waxayna ku shaqeeyaan waxqabad tamar ka fiican marka loo eego dhigooda silikoon.
Tayadan waxay si wadajir ah u dhigaan SiC inay noqoto walxo aasaas u ah qalabka korantada ee soo socda, gaar ahaan baabuurta korontada ku shaqeysa, nidaamyada tamarta la cusboonaysiin karo, iyo tignoolajiyada hawada sare.
( Budada Silicon Carbide)
2. Isku-dubarid iyo Dhisidda Kiristaalo-Tayada Sare ee Silicon Carbide
2.1 Horumarinta Mass Crystal iyada oo loo marayo Gaadiidka Uumiga Jirka
Wax soo saarka ee daahirsanaanta sare, Hal-crystal SiC waa mid ka mid ah dhinacyada ugu adag ee geynteeda farsamada, inta badan sababtoo ah heerkulka sare ee sublimation (~ 2700 ° C )iyo xakamaynta nooca badan ee kakan.
Farsamada hormuudka u ah kobaca bulk waa gaadiidka uumiga jirka (PVT) xeelad, Sidoo kale waxaa lagu tilmaamaa habka Lely ee la beddelay, kaas oo budada SiC ee nadiifka ah ay ku hoos jirto jawiga argon ee heerkulku dhaafo 2200 ° C oo dib-u-dejin lagu shubo crystal abuurka.
Xakamaynta saxda ah ee jiirada heerkulka, wareegga gaaska, iyo cadaadisku waa muhiim si loo yareeyo cilladaha sida micropipes, kala guurid, iyo noocyo badan oo lagu daro oo hoos u dhigaya waxtarka aaladda.
In kasta oo horumarka, heerka kobaca ee kiristaalo SiC ayaa sii socota inay gaabis noqoto– sida caadiga ah 0.1 ku 0.3 mm/h– samaynta habka tamar-xoog leh oo qiimo leh marka la barbar dhigo wax soo saarka silikon ingot.
Cilmi-baaris joogto ah waxay diiradda saartaa horumarinta jihaynta abuurka, wada noolaanshaha doping, iyo qaabaynta qallafsan si kor loogu qaado tayada sare ee crystal iyo miisaanka.
2.2 Dhigista Lakabka Epitaxial iyo Qaybaha Diyaarsan ee Qalabka
Samaynta qalabka dhijitaalka ah, lakabka epitaxial dhuuban ee SiC ayaa lagu fidiyay qaybta hoose ee bulk iyadoo la isticmaalayo uumiga kiimikada (CVD), sida caadiga ah isticmaalaya silane (SiH ₄) iyo lp (C ₃ H SIDEED) sida horumoodka jawiga hydrogen.
Lakabka epitaxial waa inuu muujiyaa xakamaynta cufnaanta saxda ah, cufnaanta cilladda oo yaraatay, iyo doping ku habboon (oo leh nitrogen nooca n-n ama aluminium miisaan fudud oo loogu talagalay nooca p) si loo abuuro gobollada tamarta leh ee qalabka korontada sida MOSFETs iyo Schottky diodes.
Sinnaan la'aanta ka shaqeysa lakabka hoose iyo lakabka epitaxial, oo ay weheliso walbahaarka soo noqnoqda ee ka imanaya kala duwanaanshaha koritaanka kulaylka, waxay soo bandhigi kartaa ciladaha tuulan iyo kala-baxyo saamaynaya isku halaynta qalabka.
La socodka sare ee goobta iyo habaynta habsocodka ayaa runtii si weyn hoos ugu dhacay cufnaanta cilladaha, taasoo suurtogal ka dhigaysa soo-saarka ganacsiga ee qalabka SiC-ga ee waxqabadka sare leh oo leh cimri-dherer hawleed.
Intaa waxaa dheer, horumarinta hababka processing silikoon ku habboon– sida xoqidda gebi ahaanba qallalan, ion implantation, iyo oksaydhaynta heerkulka sare– wuxuu ka caawiyay isku darka khadadka wax soo saarka semiconductor ee jira.
3. Codsiyada Aaladaha Elektarooniga ah ee Korontada iyo Xalka Tamarta
3.1 Beddelka Korontada Waxtarka Sare iyo Dhaqdhaqaaqa Korontada
Silicon carbide waxay dhab ahaantii u noqotay shay muhiim ah oo ku jira aaladaha korantada ee casriga ah, halkaas oo awooddeeda ay ku beddesho xawli sare oo leh khasaare aad u yar ay u tarjumeyso sax ahaan cabbir yar, ka fudud, iyo nidaamyo dheeraad ah oo lagu kalsoonaan karo.
In baabuurta korontada (EVs), Rogayaasha ku salaysan SiC waxay u beddelaan awoodda baytariga DC qaboojiyaha mashiinka korantada, ku ordaya inta jeer ee 100 kHz– si aad ah uga badan rogayaasha silikoon ku salaysan– hoos u dhigidda cabbirka qaybaha dadban sida inductors iyo capacitors.
Tani waxay keenaysaa dhumucda korantada oo la xoojiyey, kala duwan oo wadista, iyo maamulka kulaylka oo la xoojiyay, si toos ah uga qaybgalka caqabadaha muhiimka ah ee qaabka EV.
Soo-saareyaasha baabuurta iyo bixiyeyaasha muhiimka ah waxay ku qaateen SiC MOSFETs nidaamyadooda tareenada, gaaritaanka kayd dhaqaale oo awoodeed oo ah 5– 10% ka duwan fursadaha silikoon ku salaysan.
Sidoo kale, ee ku jira xajiyeyaasha dushiisa iyo beddelayaasha DC-DC, Aaladaha SiC waxay ogolaadaan dallac aad u dhakhso badan iyo waxqabad sare, dardargelinta u gudubka gaadiid waara.
3.2 Ilaha la cusboonaysiin karo iyo Qaab-dhismeedka Grid
In sawir-qaade (PV) rogayaasha qoraxda, Qaybaha korantada ee SiC waxay kor u qaadaan waxqabadka beddelka iyagoo yareynaya beddelka iyo khasaaraha qabashada, gaar ahaan kuwa hoos yimaada dhibaatooyinka qayb tan ah ee ku badan koronto-dhaliyaha qorraxda.
Kobcintani waxay kor u qaadaysaa soo celinta tamarta guud ee habeynta qorraxda waxayna hoos u dhigtaa shuruudaha qaboojinta, dhimista qiimaha nidaamka iyo kor u qaadida isku halaynta.
Matoorayaasha dabaysha, Beddeleyaasha SiC-ku-saleysan waxay si wax ku ool ah ula tacaalaan natiijada soo noqnoqoshada isbeddelka ee ka imanaya koronto-dhaliyeyaasha, u oggolaanaya isku-dhafka shabakadaha wanaagsan iyo awoodda tayada sare leh.
Jiilkii hore, SiC waxa lagu daabulayaa koronto-sare oo toos ah oo jira (HVDC) hababka gudbinta iyo transformers adag-state, halkaas oo danabkeeda cilladaysan ee sarreeya iyo taageerada ammaanka kulaylka ay is haysta, Awood qaybinta awoodda sare leh khasaaraha ugu yar ee meelaha fogfog.
Horumaradaasi waxay lama huraan u yihiin hagaajinta xadhkaha korantada ee gabowga iyo ku habboonaanta qaybta fidinta ee kheyraadka deegaanka ee kala firidhsan iyo xilliyada..
4. Doorarka Soo ifbaxaya ee Deegaanka Xad-dhaafka ah iyo Tignoolajiyada Quantum
4.1 Hawlgalka Dhibaatooyinka Ba'an: Hawada hawada, Nukliyeer, iyo Codsiyada Deep-Well
Adkaynta SiC waxay ku dheeraynaysaa elektiroonigga hore ee jawiga halkaas oo alaabada caadiga ahi ay ku fashilmaan.
In hawada iyo nidaamyada ilaalinta, Dareemayaasha SiC iyo aaladaha elektiroonigga ah waxay si sax ah ugu shaqeeyaan heerkulka sare, xaaladaha shucaaca sare ee u dhow matoorada jetka, Gawaarida dib u soo gelida, iyo baarayaal qol.
Its radiation solidity makes it optimal for atomic power plant surveillance and satellite electronic devices, where exposure to ionizing radiation can weaken silicon devices.
In the oil and gas market, SiC-based sensing units are utilized in downhole drilling devices to withstand temperature levels going beyond 300 ° C and corrosive chemical environments, allowing real-time data purchase for improved removal performance.
These applications leverage SiC’s ability to preserve architectural honesty and electric functionality under mechanical, kulaylka, and chemical stress and anxiety.
4.2 Combination right into Photonics and Quantum Sensing Operatings Systems
Past classical electronic devices, SiC is emerging as an encouraging system for quantum technologies because of the visibility of optically active factor flaws– sida boosaska banaan iyo silikoon banaan– taas oo muujisa sawir-qaadista ku-tiirsanaanta.
Cilladahaan waxaa lagu hagaajin karaa heerka heerkulka qolka, u dhaqmaya sida quantum bits (qubits) ama soosaarayaasha hal sawir-qaadka ah ee isdhexgalka quantum iyo qaadista.
Farsamaynta ballaaran iyo bixiyaha adeegga aasaasiga ah ee hooseeya ayaa awood u siinaya waqtiyo isku xirnaanta wareegga dheer, lagama maarmaan u ah habaynta xogta tirada.
Intaa waxaa dheer, SiC waxay la jaanqaadi kartaa istaraatiijiyada wax-soo-saarka, Oggolaanshaha is-dhexgalka ee kiniiniyada kiniiniga galay wareegyada photonic iyo resonators.
Isku dhafkan awoodda tirada iyo meelaynta miisaanka ganacsiga SiC oo ah badeecad gaar ah oo isku xidhaysa booska u dhexeeya sayniska tirada aasaasiga ah iyo injineernimada qalabka waxtarka leh.
Marka la soo koobo, Silicon carbide waxay u taagan tahay isbeddelka caadiga ah ee tignoolajiyada casriga ah ee semiconductor, iyadoo la isticmaalayo wax qabad aan loo simanayn oo ku saabsan waxtarka awoodda, maaraynta kulaylka, iyo adkeysiga deegaanka.
Laga soo bilaabo suurtagelinta nidaamyada tamarta cagaaran si loo joogteeyo sahaminta hawada sare iyo adduunka tirada, SiC ayaa weli ah inay dib u qeexdo xadka waxa aadka suurtogalka ah.
Iibiyaha
RBOSCHCO waa alaab-qeybiye kiimiko ah oo caalami ah oo la aamini karo & soo saaraha leh wax ka badan 12 waayo-aragnimo sannado ah bixinta kiimikooyinka tayada sare leh iyo Nanomaterials. Shirkaddu waxay u dhoofisaa dalal badan, sida USA, Kanada, Yurub, UAE, Koonfur Afrika, Tanzania, Kenya, Masar, Nigeria, Cameroon, Uganda, Turkiga, Mexico, Asarbayjan, Belgium, Qubrus, Czech Republic, Brazil, Chile, Argentina, Dubai, Japan, Kuuriya, Vietnam, Thailand, Malaysia, Indonesia, Australia,Jarmalka, Faransiiska, Talyaaniga, Portugal iwm. Sida hormuudka soo saaraha horumarinta nanotechnology, RBOSCHCO ayaa gacanta ku haysa suuqa. Kooxdayada shaqada xirfadlayaasha ahi waxay bixiyaan xalal kaamil ah si ay u caawiyaan hagaajinta hufnaanta warshadaha kala duwan, qiimo abuur, oo si fudud ula qabsadaan caqabadaha kala duwan. Haddii aad raadinayso sic xarun, fadlan iimayl u soo dir: [email protected]
Tags: silikoon carbide,silikoon carbide mosfet,mosfet sic
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