1. Izici Eziyisisekelo kanye Nezinhlobonhlobo ze-Crystallographic ze-Silicon Carbide
1.1 Isakhiwo se-athomu kanye ne-Polytypic Intricacy
(I-Silicon Carbide Powder)
I-silicon carbide (I-SiC) is a binary substance made up of silicon and carbon atoms set up in an extremely steady covalent latticework, identified by its extraordinary hardness, conductivity ezishisayo, kanye nezindawo zokuhlala ezidijithali.
Unlike conventional semiconductors such as silicon or germanium, SiC does not exist in a single crystal structure however manifests in over 250 distinctive polytypes– crystalline types that differ in the piling sequence of silicon-carbon bilayers along the c-axis.
The most highly relevant polytypes consist of 3C-SiC (cubic, zincblende framework), 4H-SiC, kanye ne-6H-SiC (zombili ezinezinhlangothi ezine), each showing subtly various digital and thermal attributes.
Among these, 4H-SiC is especially preferred for high-power and high-frequency digital gadgets as a result of its higher electron flexibility and lower on-resistance contrasted to various other polytypes.
The strong covalent bonding– comprising about 88% covalent and 12% ionic personality– inikeza ukuqina komshini okuphawulekayo, ukungabi namakhemikhali, kanye nokumelana nokulimala kwemisebe, ukwenza i-SiC ifanele inqubo ezindaweni ezimbi kakhulu.
1.2 I-Electronic kanye Nezimfanelo Zokushisa
Ubukhulu be-elekthronikhi be-SiC busukela ku-bandgap yayo ebanzi, okusukela ku 2.3 eV (3I-C-SiC) ku 3.3 eV (4H-SiC), zikhulu kakhulu kune-silicon 1.1 eV.
Le bandgap enkulu yenza kube nokwenzeka ngamagajethi e-SiC ukuthi asebenze emazingeni okushisa aphezulu kakhulu– kangango ba 600 °C– ngaphandle kokukhiqizwa komhlinzeki kwangaphakathi okungaphezu kwamandla edivayisi, umkhawulo obalulekile kumishini kagesi esekwe ku-silicon.
Ngaphezu kwalokho, I-SiC inamandla amakhulu enkundla kagesi (~ 3 MV/cm), cishe izikhathi eziyishumi kune-silicon, ukunika amandla izendlalelo ze-drift ezincanyana kanye nama-voltage okuphuka okuphezulu kumadivayisi kagesi.
I-thermal conductivity yayo (~ 3.7– 4.9 W/cm · K ye-4H-SiC) lidlula elethusi, ukusiza ekulahlekeni kokufudumala okusebenzayo kanye nokwehlisa isidingo sezinhlelo zokupholisa eziyinkimbinkimbi ezinhlelweni zamandla aphezulu.
Ihlanganiswe nesivinini se-electron sokugcwala okuphezulu (~ 2 × 10 ⁷ cm/s), lezi zakhiwo zenza kube lula ukuthi ama-transistors asekelwe ku-SiC nama-diode ashintshe ngokushesha, ukubhekana nama-voltage aphezulu, futhi isebenze ngokusebenza okungcono kwamandla kunozakwabo be-silicon.
Lezi zimfanelo ngokuhlanganyela zibeka i-SiC njengento eyisisekelo yesizukulwane esilandelayo samandla kagesi, ikakhulukazi ezimotweni zikagesi, izinhlelo zamandla avuselelekayo, kanye nobuchwepheshe be-aerospace.
( I-Silicon Carbide Powder)
2. Ukuhlanganiswa Nokwakhiwa Kwamakristalu Ekhwalithi Ephakeme Ye-Silicon Carbide
2.1 I-Mass Crystal Development ngokusebenzisa i-Physical Vapor Transportation
Ukukhiqizwa kokuhlanzeka okuphezulu, I-single-crystal SiC iphakathi kwezici ezinzima kakhulu zokusatshalaliswa kwayo kobuchwepheshe, ikakhulukazi ngenxa yokushisa kwayo okuphezulu kwe-sublimation (~ 2700 °C )kanye nokulawulwa kwe-polytype okuyinkimbinkimbi.
Indlela ehamba phambili yokukhula kwenqwaba ukuthuthwa komhwamuko obonakalayo (I-PVT) isu, futhi ebizwa ngokuthi indlela ye-Lely eguquliwe, lapho impushana ye-SiC ephakeme kakhulu ifakwa ngaphansi kwe-argon emkhathini emazingeni okushisa adlulayo 2200 ° C futhi ifakwe kabusha ekristaluni lembewu.
Ukulawula okuqondile phezu kwemithambeka yokushisa, ukujikeleza kwegesi, futhi ingcindezi ibalulekile ukwehlisa iziphambeko njengamapayipi amancane, ukususwa, kanye nezengezo ze-polytype ezehlisa ukusebenza kahle kwedivayisi.
Naphezu kwentuthuko, izinga lokukhula kwamakristalu e-SiC liyaqhubeka nokuhamba kancane– ngokuvamile 0.1 ku 0.3 mm/h– okwenza inqubo isebenzise amandla amaningi futhi ibe nenani uma iqhathaniswa nokukhiqizwa kwe-silicon ingot.
Ucwaningo oluqhubekayo lugxile ekuthuthukiseni ukuqondiswa kwembewu, ukuvumelana kwe-doping, kanye nesakhiwo se-crucible sokuthuthukisa ikhwalithi ephezulu yekristalu nokuqina.
2.2 I-Epitaxial Layer Deposition kanye Nezingxenye Ezingaphansi Ezilungele Idivayisi
Okokwenziwa kwemishini yedijithali, ungqimba oluncane lwe-epitaxial lwe-SiC lunwetshwa ku-substratum eyinqwaba kusetshenziswa ukufakwa komhwamuko wamakhemikhali (I-CVD), ngokuvamile usebenzisa i-silane (SiH ₄) kanye lp (C ₃ H ISISHIYAGALOMBILI) njengabanduleli endaweni ye-hydrogen.
Lesi sendlalelo se-epitaxial kufanele sibonise ukulawula okunembile kokuminyana, ukunciphisa ukuminyana kwesici, kanye ne-doping elungiselelwe (nge-nitrogen yohlobo lwe-n noma i-aluminium enesisindo esincane yohlobo lwe-p) ukudala izifunda ezinomdlandla zamagajethi wamandla njengama-MOSFET nama-Schottky diode.
Ukungalingani kwe-latticework phakathi kwe-substratum ne-epitaxial layer, kanye nokucindezeleka okuphindaphindayo okuvela kumehluko wokukhula okushisayo, ingaphrezenta amaphutha okunqwabelanisa kanye nokugudluzwa kwezikulufu okuthinta ukuthembeka kwamathuluzi.
Ukubhekwa okuthuthukile kwe-in-situ kanye nokwenza ngcono inqubo empeleni kwehle kakhulu ukuminyana kwamaphutha, okwenza kube nokwenzeka ukukhiqizwa kwebhizinisi kwamagajethi e-SiC asebenza kakhulu anesikhathi eside sokusebenza.
Ngaphezu kwalokho, ukuthuthukiswa kwezindlela zokucubungula ezihambisana ne-silicon– njengokuchotshozwa okomile ngokuphelele, ukufakwa kwe-ion, kanye ne-high-temperature oxidation– isize ngokuhlanganiswa emigqeni yokukhiqiza ye-semiconductor ekhona.
3. Izicelo ku-Power Electronic Devices kanye ne-Energy Solution
3.1 Ukuguqulwa kwamandla okusebenza kahle kakhulu kanye nokuhamba kukagesi
I-silicon carbide empeleni isiphenduke into esemqoka kumadivayisi wesimanje amandla kagesi, lapho ikhono layo lokushintshela kumafrikhwensi aphezulu ngokulahleka okuncane kakhulu lihumusha ngqo libe usayizi omncane, elula, kanye nezinhlelo ezithembekile ezengeziwe.
Ezimotweni zikagesi (EVs), Ama-inverters asuselwa ku-SiC aguqula amandla ebhethri le-DC abe isimo somoya semoto kagesi, egijima kumafrikhwensi kakhulu 100 kHz– kakhulu kunama-inverters asekelwe ku-silicon– ukunciphisa usayizi wezingxenye ze-passive ezifana nama-inductors nama-capacitor.
Lokhu kubangela ukushuba kwamandla okuthuthukisiwe, izinhlobonhlobo zokushayela ezinwetshiwe, kanye nokuphatha okushisayo okuthuthukisiwe, ukunakekela ngqo izithiyo ezibalulekile ngesitayela se-EV.
Abakhiqizi bezimoto ababalulekile nabahlinzeki bathathe ama-SiC MOSFET ezinhlelweni zabo zokushayela, ukuzuza ukonga ngokwezimali kwamandla 5– 10% kuqhathaniswa nezinketho ezisekelwe ku-silicon.
Ngokunjalo, kumashaja angaphakathi kanye neziguquli ze-DC-DC, Amagajethi e-SiC avumela ukushaja okusheshayo nokusebenza okuphezulu, ukusheshisa ukushintshela kwezokuthutha ezihlala njalo.
3.2 Insiza Evuselelekayo kanye Nohlaka Lwegridi
Ku-photovoltaic (I-PV) ama-solar inverters, Izingxenye zamandla ze-SiC zithuthukisa ukusebenza kokuguqulwa ngokunciphisa ukushintsha nokulahlekelwa kokwenziwa, ikakhulukazi ngaphansi kwezinkinga zamathani ngokwengxenye ezivamile ekukhiqizeni amandla elanga.
Lokhu kuthuthukiswa kuphakamisa ukubuya kwamandla okuvamile kokusethwa kwe-solar futhi kwehlisa izidingo zokupholisa, ukunciphisa amanani esistimu nokuthuthukisa ukwethembeka.
Kumajeneretha omoya, Iziguquli ezisekelwe ku-SiC zibhekana nomphumela wemvamisa eguquguqukayo evela kumajeneretha ngempumelelo kakhulu, okuvumela inhlanganisela yegridi engcono namandla ekhwalithi ephezulu.
Isizukulwane esidlule, I-SiC isatshalaliswa ku-high-voltage eqondile ekhona (I-HVDC) amasistimu okudlulisa kanye nama-solid state transformers, lapho i-voltage yayo ephezulu yokungasebenzi kahle kanye nokusekelwa kokuphepha okushisayo kuhlangene, ukusatshalaliswa kwamandla aphezulu nokulahlekelwa okuncane ezindaweni ezikude.
Lezi ntuthuko zibalulekile ekuthuthukiseni amagridi amandla aguga futhi kufane nesabelo esandayo sezinsiza ezihlakazekile nezikhathi ezithile ezivumelana nemvelo..
4. Izindima Ezisafufusa Ku-Extreme-Environment kanye ne-Quantum Technologies
4.1 Ukusebenza Ezinkingeni Ezidlulele: I-Aerospace, Inuzi, kanye ne-Deep-Well Applications
Ukuqina kwe-SiC kunweba ama-electronics adlule emkhathini lapho imikhiqizo ejwayelekile ihluleka khona.
Ezinhlelweni ze-aerospace kanye nokuvikela, Izinzwa ze-SiC nemishini kagesi isebenza ngokunembile emazingeni okushisa aphezulu, izimo ezinemisebe ephezulu eduze nezinjini zejethi, ukungena kabusha amaloli, nama-probes egumbi.
Ukuqina kwayo ngemisebe kuyenza ilungele ukubhekwa kwezitshalo zamandla e-athomu kanye nemishini kagesi yesathelayithi, lapho ukuchayeka emisebeni ye-ionizing kungawenza buthaka amadivaysi e-silicon.
Emakethe kawoyela negesi, Amayunithi ezinzwa asuselwa ku-SiC asetshenziswa emishinini yokumba imigodi ukuze akwazi ukumelana namazinga okushisa adlula. 300 ° C kanye nezindawo zamakhemikhali ezonakalisayo, ukuvumela ukuthengwa kwedatha kwesikhathi sangempela ukuze kwenziwe ngcono ukusebenza kokususa.
Lezi zinhlelo zokusebenza zikhulisa amandla e-SiC okugcina ukwethembeka kwezakhiwo nokusebenza kukagesi ngaphansi komshini., ezishisayo, nokucindezeleka kwamakhemikhali nokukhathazeka.
4.2 Inhlanganisela ibe yi-Photonics kanye ne-Quantum Sensing Operatings Systems
Imishini kagesi yakudala, I-SiC ivela njengohlelo olukhuthazayo lobuchwepheshe be-quantum ngenxa yokubonakala kwamaphutha e-optically active factor– njengama-divacancies kanye nezikhala ze-silicon– ebonisa i-photoluminescence encike ku-spin.
Lezi zinkinga zingalungiswa ezingeni lokushisa legumbi, isebenza njengama-quantum bits (qubits) noma i-single-photon emitters yokusebenzisana kwe-quantum nokucosha.
I-bandgap ebanzi nokugxila okuphansi komhlinzeki wesevisi kunika amandla izikhathi ezinde zokujikeleza, kubalulekile ekucubunguleni idatha ye-quantum.
Ngaphezu kwalokho, I-SiC iyahambisana namasu e-microfabrication, okuvumela ukuhlanganiswa kwama-quantum emitters kumasekethe e-photonic nama-resonators.
Le ngxubevange yamandla e-quantum kanye nokubekwa kwe-Scalability kwezohwebo kubeka i-SiC njengomkhiqizo okhethekile ovala isikhala phakathi kwesayensi ye-quantum eyisisekelo nobunjiniyela bedivayisi ewusizo..
Ngokufigqiwe, I-silicon carbide imele ushintsho olujwayelekile kubuchwepheshe besimanje be-semiconductor, ukusebenzisa ukusebenza okungalingani ekusebenzeni kwamandla, ukuphathwa okushisayo, kanye nokuqina kwemvelo.
Ukusuka ekwenzeni ukuthi kube nezinhlelo zamandla aluhlaza kuya ekuqhubekiseni ukuhlola emkhathini nasemhlabeni we-quantum, I-SiC isalokhu ichaza kabusha imikhawulo yalokho okungenzeka kakhulu.
Umthengisi
I-RBOSCHCO ingumnikezeli wempahla yamakhemikhali othembekile emhlabeni jikelele & umkhiqizi one-over 12 isipiliyoni seminyaka ekuhlinzekeni amakhemikhali ekhwalithi ephezulu kakhulu namaNanomaterials. Inkampani ithumela emazweni amaningi, njenge-USA, Canada, EYurophu, I-UAE, Iningizimu Afrika, eTanzania, Kenya, iGibhithe, eNigeria, eCameroon, Uganda, igalikuni, Mexico, I-Azerbaijan, EBelgium, eKhupro, I-Czech Republic, Brazil, eChile, E-Argentina, I-Dubai, Japan, Korea, Vietnam, Thailand, I-Malaysia, I-Indonesia, Australia,EJalimane, France, Italy, Portugal njll. Njengomkhiqizi ohamba phambili wokuthuthukiswa kwe-nanotechnology, I-RBOSCHCO ibusa imakethe. Ithimba lethu lomsebenzi ochwepheshe linikeza izixazululo eziphelele ukusiza ukuthuthukisa ukusebenza kahle kwezimboni ezihlukahlukene, dala inani, futhi ubhekane kalula nezinselele ezihlukahlukene. Uma ufuna sic compound, sicela uthumele i-imeyili ku: [email protected]
Omaka: i-silicon carbide,i-silicon carbide mosfet,mosfet sic
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