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HomeNewsAsiaTo prevent pinholes from occurring in the ZnS layer

To prevent pinholes from occurring in the ZnS layer

To prevent pinholes from occurring in the ZnS layer and to effectively control the volumetric ratio when co-depositing with Al2S3, a baffled boat designed for the thermal deposition of ZnS was used (R.D. Mathis). Consistency between nominal and actual window layer thicknesses was confirmed by spectroscopic ellipsometry (J. A. Woollam, Vase) for each growth on precoated Si substrates. Performance characteristics of ZnS: Al2S3 window layer devices were compared to control devices utilizing 75 Å of BCP as the window buffer layer. Current density (J) was measured as a function of voltage (V) (Keithley 2420) under dark conditions and AM1.5G solar simulation (xenon arc lamp), where the intensity was measured using an NREL-calibrated Si reference cell with KG5 filter.17 X-ray diffraction (XRD) data were collected (Bruker) in the Bragg-Brentano geometry using a CuKα source on 1000 Å ZnS: Al2S3 films deposited on precoated Si (001) substrates. Sheet resistance measurements were obtained using a four-point probe from equivalent films deposited on precoated glass. Atomic force microscopy (AFM) data were collected on 300 Å ZnS: Al2S3 films deposited on glass substrates precoated with ITO and C60. AFM has been carried out with an Asylum Research model MFP-3D AFM apparatus in repulsive mode. The Si tips used were (1) Asylum Research AC240TM-R3 coated in Ti/Pt with spring constant k = 2 N/m and frequency f0 = 70 kHz and (2) MikroMasch DPE18 coated in Pt with k = 3.5 N/m and f0 = 75 kHz. If you are looking for high quality, high purity, and cost-effective zinc sulfide, or if you require the latest price of zinc sulfide, please feel free to email contact mis-asia.

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