1. Asalin Tsarin da Polymorphism na Silicon Carbide
1.1 Crystal Chemistry da Polytypic iri-iri
(Silicon Carbide Ceramics)
Silicon carbide (SiC) samfurin yumbu ne wanda aka haɗa shi da siliki da carbon atom wanda aka saita a cikin sarrafa tetrahedral., haɓaka ƙaƙƙarfan tsayayyen tsari da ƙaƙƙarfan lattice crystal.
Sabanin yawancin yumbu na al'ada, SiC ba shi da kadaici, daban-daban crystal tsarin; maimakon haka, yana nuna abin mamaki wanda aka sani da polytypism, inda tsarin sinadarai iri ɗaya zai iya yin tasiri 250 daban-daban polytypes, kowane daban-daban a cikin jerin tarawa na kusa-cushe atomic layers.
Ɗaya daga cikin manyan nau'ikan nau'ikan fasaha na fasaha shine 3C-SiC (mai siffar sukari, zinc blende framework), 4H-SiC, da 6H-SiC (biyu hexagonal), kowanne yana ba da lantarki daban-daban, thermal, da gine-ginen inji.
3C-SiC, kuma ana kiranta beta-SiC, yawanci yana samuwa ne a rage yawan zafin jiki kuma yana iya daidaitawa, yayin da 4H da 6H polytypes, ake kira alpha-SiC, sun fi kwanciyar hankali da zafin jiki kuma gabaɗaya ana amfani da su a cikin babban zafin jiki da aikace-aikacen dijital.
Wannan bambance-bambancen tsarin yana ba da damar zaɓin kayan da aka yi niyya dangane da ƙayyadaddun aikace-aikacen, ko a cikin na'urorin lantarki ne, inji mai sauri, ko matsanancin yanayin zafi.
1.2 Halayen Haɗawa da Halayen Sakamako
Ƙarfin SiC ya samo asali ne daga ƙaƙƙarfan haɗin Si-C ɗin sa, wanda gajere ne kuma tsayin daka sosai, yana haifar da tsayayyen hanyar sadarwa mai girma uku.
Wannan tsarin haɗin kai yana gabatar da gidaje na injiniyoyi masu ban mamaki, ciki har da babban ƙarfi (yawanci 25– 30 GPA akan kewayon Vickers), fice iya jurewa (kamar yadda 600 MPa don nau'ikan sintered), da kuma kyakkyawan sturdiness sturdiness game da sauran tukwane.
Yanayin covalent kuma yana ƙara wa SiC's mafi kyawun halayen zafi, wanda zai iya zuwa 120– 490 W/m · K relying on the polytype and pureness– kama da wasu karafa kuma da yawa fiye da mafi yawan kayan gine-gine.
Bugu da kari, SiC yana nuna ƙarancin haɓakar haɓakar thermal, ku 4.0– 5.6 × 10 ⁻ / K, wanda, a lokacin da aka hade tare da high thermal watsin, yana ba shi juriya mai ban mamaki na thermal shock.
Wannan yana nufin abubuwan SiC na iya ɗaukar saurin daidaita yanayin zafi ba tare da tsagewa ba, sifa mai mahimmanci a aikace-aikace kamar sassa masu dumama, masu musayar zafi, da tsarin kariya na thermal aerospace.
2. Ƙirƙiri da Dabarun Gudanarwa na Silicon Carbide Ceramics
( Silicon Carbide Ceramics)
2.1 Maɓalli Hannun Ƙira: Daga Acheson zuwa Advanced Synthesis
Samar da masana'antu na silicon carbide ya koma ƙarshen karni na 19 tare da haɓaka hanyar Acheson, Hanyar ragewar carbothermal wanda silica mai tsabta (SiO ₂) da carbon (yawanci man coke) suna mai zafi zuwa yanayin zafi sama 2200 ° C a cikin injin juriya na lantarki.
Yayin da ake ci gaba da amfani da wannan hanyar don samar da ɗanyen SiC foda don abrasives da refractories., yana samar da abu mai ƙazanta da ƙazanta marasa daidaituwa, hana amfani da shi a cikin manyan yumbu masu inganci.
Haɓakawa na zamani sun haifar da madadin hanyoyin haɗin kai kamar jibgewar tururin sinadarai (CVD), wanda ke haifar da ultra-high-tsarki, SiC guda-crystal don aikace-aikacen semiconductor, da Laser-taimaka ko haɓakar haɓakar plasma don foda na nanoscale.
Waɗannan ƙwararrun dabaru suna ba da damar ingantaccen iko akan stoichiometry, girman barbashi, da tsarkin lokaci, mahimmanci don daidaita SiC zuwa takamaiman buƙatun ƙira.
2.2 Densification da Microstructural Control
Daga cikin mafi kyawun matsalolin samar da SiC porcelains shine samun cikakkiyar ƙima saboda ƙaƙƙarfan haɗin kai da ƙarancin rarraba kai., wanda ke hana daidaitaccen sintering.
Don shawo kan wannan, an ɓullo da wasu takamaiman dabarun ƙirƙira.
Haɗin kai yana haɗawa da kutsawa wani nau'in carbon preform tare da narkakkar siliki, wanda ke amsawa don haɓaka SiC a wurin, yana haifar da ɓangaren siffa ta kusa-net tare da raguwa kaɗan.
Ana samun sintering mara ƙarfi ta haɗa da kayan taimako kamar boron da carbon, wanda ke tallata iyakar yaduwar hatsi da kuma kawar da pores.
Dumi matsi da zafi isostatic latsa (HIP) yi amfani da damuwa na waje a duk lokacin dumama, ba da izini don cikakken ƙima a rage yawan matakan zafin jiki da ƙirƙirar kayan tare da ƙayyadaddun matsuguni na injiniya ko kaddarorin kasuwanci.
Wadannan hanyoyin sarrafawa suna ba da damar gina sassan SiC tare da ƙwanƙwasa mai kyau, uniform microstructures, muhimmanci ga maximizing ƙarfi, sa juriya, da mutunci.
3. Ƙarfafa Ƙwarewa da Aikace-aikace masu yawa
3.1 Ƙunƙarar zafi da Injiniya a cikin Mummunan Muhalli
Silicon carbide porcelains an daidaita su musamman don hanya a cikin matsaloli masu tsanani saboda ikon su na kiyaye kwanciyar hankali a cikin zafi., tsayayya hadawan abu da iskar shaka, da jure wa lalacewa na inji.
A cikin yanayi na oxidizing, SiC yana samar da siliki mai aminci (SiO ₂) Layer a kan farfajiyarsa, wanda ke rage ƙarin iskar shaka kuma yana ba da damar ci gaba da amfani a matakan zafin jiki gwargwadon yadda 1600 ° C.
Wannan juriya oxidation, hadedde tare da high creep juriya, ya sa SiC ta dace da sassa a cikin injinan gas, ɗakunan konewa, da masu musayar ɗumi masu inganci.
Ana amfani da ƙaƙƙarfan taurin sa da juriyar abrasion a aikace-aikacen kasuwanci kamar sassan famfo na slurry, sandblasting nozzles, da yankan na'urori, inda madadin karfe zai lalace da sauri.
Haka kuma, SiC ta rage haɓakar haɓakar thermal da haɓakar haɓakar thermal yana sa ya zama samfurin da aka ba da shawarar don madubai a cikin na'urorin hangen nesa da tsarin laser., inda tsaro mai girma a ƙarƙashin keken zafi yana da mahimmanci.
3.2 Aikace-aikacen lantarki da Semiconductor
Bayan tsarin amfanin sa, Silicon carbide yana taka rawar canji a fannin wutar lantarki.
4H-SiC, musamman, yana da faffadan bandeji na wajen 3.2 eV, ƙyale na'urori suyi aiki a mafi girman ƙarfin lantarki, yanayin zafi, da kuma sauyawa na yau da kullun fiye da na'urori masu amfani da siliki na gargajiya.
Wannan yana haifar da kayan aikin wuta– irin su Schottky diodes, MOSFETs, da JFET– tare da rage yawan asarar wutar lantarki, ƙaramin girman girman, da haɓaka aiki, wanda a halin yanzu ana amfani da su sosai a cikin motocin lantarki, Sabunta albarkatun inverters, da tsarin grid masu hikima.
Babban yankin wutar lantarki na SiC (game da 10 sau da yawa na siliki) yana ba da izinin yadudduka na ɗigo na bakin ciki, rage girman juriya da haɓaka aikin na'urar.
Bugu da kari, SiC's high thermal conductivity yana taimakawa wajen watsar da dumi cikin nasara, rage girman buƙatar manyan tsarin kwandishan da ba da damar ƙara ƙarami, abin dogara kayan lantarki.
4. Haɓaka Ƙarfafawa da Bayanin gaba a cikin Fasahar Silicon Carbide
4.1 Haɗuwa cikin Ƙarfin Ƙarfi da Maganin Aerospace
Sauya maimaitawa zuwa tsaftataccen makamashi da jigilar kuzari yana haifar da buƙatu mara misaltuwa ga abubuwan tushen SiC.
A cikin hasken rana inverters, iska ikon converters, da tsarin sarrafa baturi, Kayan aikin SiC suna ƙara ingantaccen ƙarfin jujjuyawar ƙarfi, madaidaiciyar raguwar fitar da iskar carbon da farashin aiki.
A cikin sararin samaniya, SiC fiber-reinforced SiC matrix composites (SiC/SiC CMCs) ana ƙirƙira don injin injin turbin, konewa rufi, da tsarin tsaro na thermal, samar da ajiyar farashi mai nauyi da ribar aiki akan superalloys na tushen nickel.
Waɗannan abubuwan haɗin yumburan matrix na iya gudana a yanayin zafi da ya wuce gona da iri 1200 ° C, yana ba da damar injunan jet na gaba na gaba tare da mafi girman juzu'i-zuwa nauyi da ingantaccen aikin iskar gas..
4.2 Nanotechnology da Quantum Applications
A nanoscale, silicon carbide yana nuna keɓantattun gine-ginen ƙididdiga waɗanda ake bincika don fasahar zamani na gaba.
Wasu nau'ikan nau'ikan nau'ikan SiC suna karbar bakuncin buɗewar silicon da rarrabuwa waɗanda ke aiki azaman al'amurra masu aiki, aiki a matsayin adadi kaɗan (qubits) don aikace-aikacen ƙididdiga na kwamfuta da ƙididdigar ƙididdiga.
Wadannan matsalolin za a iya tashe su ta hanyar gani, sarrafawa, da sake dubawa a dakin da zafin jiki, babban fa'ida akan yawancin tsarin ƙididdiga waɗanda ke kira ga matsalolin cryogenic.
Haka kuma, Ana binciken SiC nanowires da nanoparticles don amfani a cikin na'urorin fitar da fili, photocatalysis, da kuma nazarin halittu saboda girman yanayin yanayinsu, kimiyyar tsaro, da kaddarorin zama na lantarki ko na kasuwanci.
Yayin da karatu ya ci gaba, hadewar SiC daidai cikin tsarin kididdigar giciye da na'urorin nanoelectromechanical (NEMS) yayi alƙawarin haɓaka aikin sa fiye da wuraren ƙirar al'ada.
4.3 Dorewa da Abubuwan Rayuwa Don La'akari
Samar da SiC yana da ƙarfin kuzari, musamman a high-zazzabi kira da sintering matakai.
Duk da haka, dawwamammen fa'idodin abubuwan SiC– kamar tsawon rai, rage kulawa, da ingantaccen tsarin tasiri– yawanci ya zarce tasirin muhalli na farko.
Ana ci gaba da yunƙurin samar da hanyoyin masana'antu masu dorewa, wanda ke kunshe da sintirin da ke taimaka wa microwave, ƙari masana'antu (3D bugu) da SiC, da sake amfani da sharar SiC daga sarrafa wafer semiconductor.
Waɗannan ci gaban na nufin rage yawan amfani da wutar lantarki, rage sharar kayan abu, da tallafawa yanayin tattalin arziki na zagaye na gaba a sassan kayan ci gaba.
A karshe, Silicon carbide porcelains suna wakiltar jigon jigon kimiyyar samfuran zamani, daidaita tazara tsakanin dorewar gine-gine da sassaucin aiki.
Daga ba da damar tsaftataccen tsarin wutar lantarki zuwa haɓaka sabbin ƙima, SiC ya rage don sake fasalin iyakokin abin da zai yiwu a cikin ƙira da binciken kimiyya.
Yayin da dabarun sarrafawa ke ci gaba kuma sabbin aikace-aikace suka taso, makomar silicon carbide tana da haske sosai.
5. Mai bayarwa
Advanced Ceramics kafa a Oktoba 17, 2012, babban kamfani ne na fasaha mai himma ga bincike da haɓakawa, samarwa, sarrafawa, tallace-tallace da sabis na fasaha na yumbu dangi kayan da samfurori. Kayayyakinmu sun haɗa amma ba'a iyakance ga samfuran yumbura na Boron Carbide ba, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, da dai sauransu. Idan kuna sha'awar, don Allah a ji daɗin tuntuɓar mu.([email protected])
Tags: Silicon Carbide Ceramics,siliki carbide,siliki carbide farashin
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