1. Uhlaka oluyisisekelo kanye ne-Polymorphism ye-Silicon Carbide
1.1 I-Crystal Chemistry kanye ne-Polytypic Variety
(I-Silicon Carbide Ceramics)
I-silicon carbide (I-SiC) iwumkhiqizo we-ceramic onamathela ngokuhlanganyela owenziwe nge-silicon nama-athomu ekhabhoni amiswe kulawulo lwe-tetrahedral., ukwakha i-crystal lattice ezinzile futhi eqinile.
Ngokungafani ne-ceramics eminingi evamile, I-SiC ayinayo yodwa, uhlaka lwekristalu oluhlukile; esikhundleni salokho, ibonisa umuzwa ohlaba umxhwele owaziwa ngokuthi i-polytypism, lapho kwaso kanye isakhiwo samakhemikhali esifanayo singashintsha 250 ama-polytypes ahlukahlukene, ngayinye iyahlukahluka ngokulandelana kokunqwabelanisa kwezendlalelo ze-athomu ezivaleleke.
Enye yama-polytypes anamandla kakhulu kwezobuchwepheshe yi-3C-SiC (cubic, uhlaka lwe-zinc blende), 4H-SiC, kanye ne-6H-SiC (zombili ezinezinhlangothi ezine), ngayinye inikeza ezihlukahlukene electronic, ezishisayo, kanye nezakhiwo zemishini.
3I-C-SiC, ebizwa nangokuthi i-beta-SiC, imvamisa yakheka emazingeni okushisa ancishisiwe futhi iyametastable, kuyilapho 4H kanye 6H polytypes, ebizwa ngokuthi i-alpha-SiC, azinzile kakhulu ngokushisa futhi asetshenziswa kakhulu ekushiseni okuphezulu nasezinhlelweni zedijithali.
Lokhu kuhlukahluka kwesakhiwo kunika amandla inketho yezinto eziqondisiwe ngokusekelwe kuhlelo lokusebenza oluqokiwe, noma ngabe isemandleni kagesi, high-speed imishini, noma izindawo ezishisayo ezishisayo.
1.2 Izimfanelo Zokuhlanganisa kanye Nesici Esiwumphumela
Ukuqina kwe-SiC kuvela kumabhondi ayo aqinile e-Si-C, mafishane ngobude futhi aqondise kakhulu, okuholela kunethiwekhi eqinile enezinhlangothi ezintathu.
Lolu hlelo lokuhlanganisa lunikeza izindlu zemishini emangalisayo, kuhlanganise nokuqina okuphezulu (ngokuvamile 25– 30 I-GPa ebangeni le-Vickers), ukuqina okuguquguqukayo okuvelele (kangango ba 600 I-MPa yezinhlobo ze-sintered), kanye nokuqina okuhle kwe-crack mayelana nezinye izitsha zobumba.
Imvelo ye-covalent nayo yengeza ekuphatheni okushisayo kwe-SiC, ezingafika ku-120– 490 W/m · K ethembele kuhlobo lwe-polytype nobumsulwa– kufana nezinye izinsimbi kanye nama-porcelain amaningi wezakhiwo.
Ngaphezu kwalokho, I-SiC ibonisa i-coefficient ephansi yokuthuthukiswa kokushisa, ngo-4.0– 5.6 × 10 ⁻⁶/ K, okuyinto, lapho kuhlanganiswe ne-high conductivity eshisayo, inikeza ukumelana nokushaqeka okushisayo okumangalisayo.
Lokhu kusho ukuthi izingxenye ze-SiC zingenza izinguquko ezisheshayo zokushisa ngaphandle kokuqhekeka, isici esibalulekile ezinhlelweni ezifana nezingxenye ze-heater, ama-exchangers afudumele, kanye nezinhlelo zokuzivikela ezishisayo zasemkhathini.
2. Amasu Wokuhlanganisa Nokusingatha Izingcezwana Ze-Silicon Carbide
( I-Silicon Carbide Ceramics)
2.1 Izindlela Zokukhiqiza Ezibalulekile: Ukusuka ku-Acheson kuya ku-Advanced Synthesis
Ukukhiqizwa kwezimboni kwe-silicon carbide kubuyela emuva ngasekupheleni kwekhulu le-19 ngokuthuthukiswa kwenqubo ye-Acheson., indlela yokunciphisa i-carbothermal lapho i-silica ehlanzekile kakhulu (SiO ₂) kanye nekhabhoni (ngokuvamile i-oil coke) zishiselwa ezingeni lokushisa ngaphezulu 2200 ° C ku-heater kagesi ukumelana.
Ngenkathi le ndlela isaqhubeka nokusetshenziswa ngokujwayelekile ukwenza i-SiC powder engahluziwe yama-abrasives nama-refractories., ikhiqiza izinto ezinokungcola kanye ne-particle morphology engalingani, ikhawulela ukusetshenziswa kwayo kuma-ceramics asebenza kahle kakhulu.
Ukuthuthukiswa kwesimanje kuye kwaholela kwezinye izindlela zokuhlanganisa ezifana nokubeka umhwamuko wamakhemikhali (I-CVD), okudala ukuhlanzeka okuphezulu kakhulu, I-single-crystal SiC yezinhlelo zokusebenza ze-semiconductor, kanye ne-laser-assisted noma i-plasma-enhanced synthesis yama-nanoscale powders.
Lezi zindlela eziyinkimbinkimbi zivumela ukulawula okunembile phezu kwe-stoichiometry, ubukhulu bezinhlayiyana, kanye nobumsulwa besigaba, kubalulekile ukuhlanganisa i-SiC nezimfuno ezithile zedizayini.
2.2 Ukuminyana kanye nokulawulwa kweMicrostructural
Phakathi kobunzima obungcono kakhulu ekukhiqizeni izitsha zobumba ze-SiC ukuzuza ukuminyana okuphelele ngenxa yokuhlangana kwayo okuqinile okuhlangene kanye nama-coefficient aphansi azihlukanisayo., okuvimbela ukucula okujwayelekile.
Ukunqoba lokhu, inqwaba yamasu athile okuminyana akhiwe.
Isibopho sokusabela sihlanganisa ukungena kwe-carbon preform enezimbotshana ezine-silicon encibilikisiwe, ephendula ukuthuthukisa i-SiC in situ, okuholela engxenyeni yesimo esiseduze nenetha enokuncipha okuncane kakhulu.
I-sinterlessless sintering ifinyelelwa ngokufaka izinsiza ze-sintering ezifana ne-boron ne-carbon, ezikhangisa ngokusatshalaliswa komkhawulo wokusanhlamvu futhi zisuse ama-pores.
Ukucindezela okufudumele nokucindezela kwe-isostatic okushisayo (I-HIP) sebenzisa ukucindezeleka kwangaphandle ngesikhathi sokushisa, okuvumela ukuminyana okugcwele emazingeni okushisa ancishisiwe nokudala izinto ezinezakhiwo ezimangalisayo zokuhlala noma ezohwebo.
Lezi zindlela zokucubungula zenza kube lula ukwakhiwa kwezingxenye ze-SiC ezinohlamvu oluhle, ama-microstructures afanayo, kubalulekile ekukhuliseni amandla, ukumelana nokugqoka, kanye nobuqotho.
3. Ukuphumelela Okungokoqobo kanye Nezicelo Ezisebenzayo Eziningi
3.1 Ukuqina Okushisayo Nemishini Ezimweni Ezinzima
Ama-porcelain e-silicon carbide afaniswe ngokuhlukile nenqubo ezinkingeni ezinzima ngenxa yekhono lawo lokugcina ukuqina kwesakhiwo ekushiseni., ukumelana ne-oxidation, futhi umelane nokuguga kwemishini.
Kuma-ambiences oxidizing, I-SiC yakha i-silica yokuphepha (SiO ₂) ungqimba endaweni yalo, okunciphisa i-oxidation eyengeziwe futhi kuvumela ukusetshenziswa okuqhubekayo emazingeni okushisa ngendlela efanayo 1600 °C.
Lokhu ukumelana ne-oxidation, kuhlanganiswe nokumelana okuphezulu kwe-creep, yenza i-SiC ifanele izingxenye zamajeneretha egesi, amagumbi omlilo, kanye nama-exchanger afudumele asebenza kahle kakhulu.
Ukuqina kwayo okungavamile kanye nokumelana nokuhuzuka kuyasetshenziswa ezinhlelweni zezentengiselwano ezifana nezingxenye zephampu enodaka., i-sandblasting nozzles, kanye nemishini yokusika, lapho ezinye izindlela zensimbi zizowohloka ngokushesha.
Ngaphezu kwalokho, I-SiC's encishisiwe ukwanda okushisayo kanye nokushisa okuphezulu kwe-thermal kuyenza ibe umkhiqizo onconywayo wezibuko ezibonakalweni zasemkhathini nasezinhlelweni ze-laser., lapho ukuvikeleka kobukhulu ngaphansi kokuhamba ngebhayisikili okushisayo kubalulekile.
3.2 Izicelo zikagesi neze-semiconductor
Ngaphandle kokusetshenziswa kwayo kwesakhiwo, I-silicon carbide idlala umsebenzi wokuguqula endaweni yamandla kagesi.
4H-SiC, ngokuqondene, ine-bandgap ebanzi ye-roughly 3.2 eV, okuvumela amadivayisi ukuthi asebenze ngama-voltage aphezulu, amazinga okushisa, kanye nokushintsha okujwayelekile kunama-semiconductors asuselwa ku-silicon.
Lokhu kubangela amathuluzi amandla– njenge-Schottky diodes, Ama-MOSFET, kanye nama-JFETs– ngokulahleka kwamandla ehliswe kakhulu, usayizi omncane, kanye nokusebenza kahle okuthuthukile, okwamanje ezisetshenziswa kakhulu ezimotweni zikagesi, iziguquli zezinsiza ezivuselelekayo, kanye nezinhlelo zamagridi ezihlakaniphile.
Indawo kagesi engasebenzi kahle kakhulu ye-SiC (mayelana 10 izikhathi ezingaphezu kwe-silicon) ivumela izendlalelo ezikhukhulekayo ezincane, ukunciphisa ukumelana nokuthuthukisa ukusebenza kwegajethi.
Ngaphezu kwalokho, Ukushisa okuphezulu kwe-SiC kusiza ukuqeda ukufudumala ngempumelelo, ukunciphisa isidingo samasistimu amakhulu okupholisa umoya nokwenza kube mancane nakakhulu, izingxenye ze-elekthronikhi ezithembekile.
4. I-Arising Frontiers kanye Nohlolojikelele Lwekusasa ku-Silicon Carbide Technology
4.1 Inhlanganisela ku-Advanced Power kanye ne-Aerospace Solutions
Uguquko oluphindelelayo lokuya emandleni ahlanzekile nezokuthutha olunamandla luqhuba isidingo esingenakuqhathaniswa sezinto ezisekelwe ku-SiC..
Kuma-inverters elanga, iziguquli zamandla omoya, kanye nezinhlelo zokuphatha ibhethri, Amathuluzi e-SiC engeza ekusebenzeni okuphezulu kokuguqulwa kwamandla, ukwehla okuqondile kokukhishwa kwekhabhoni kanye nezindleko zokusebenza.
Emkhathini, Izinhlanganisela ze-SiC ze-matrix eziqiniswe nge-fiber ye-SiC (I-SiC/SiC CMCs) zidalelwa ama-wind turbine blades, i-combustor linings, kanye nezinhlelo zokuphepha ezishisayo, ukuhlinzeka ngokonga kwezindleko zesisindo kanye nezinzuzo zokusebenza ngaphezu kwama-superalloy asekelwe ku-nickel.
Lezi zinhlanganisela ze-ceramic matrix zingasebenza emazingeni okushisa adlulayo 1200 °C, okwenza kube nokwenzeka ezinjinini zejethi zesizukulwane esilandelayo ezinezilinganiso ezinkulu ze-thrust-to-weight kanye nokusebenza kwegesi okuthuthukisiwe.
4.2 I-Nanotechnology kanye ne-Quantum Applications
Ku-nanoscale, I-silicon carbide ikhombisa izakhiwo ezihlukile ze-quantum ezihlolelwa ubuchwepheshe besizukulwane esilandelayo..
Ama-polytypes athile we-SiC abamba ukuvuleka kwe-silicon kanye ne-divacancies esebenza njengezinkinga ezisebenzayo, isebenza njengama-quantum amancane (qubits) kukhompyutha ye-quantum kanye nezinhlelo zokusebenza zokuqaphela i-quantum.
Lezi zinkinga zingaqalwa nge-optically, kulawulwa, futhi ubuyekeze ngezinga lokushisa legumbi, inzuzo enkulu phezu kwezinye izinhlelo eziningi ze-quantum ezidinga izinkinga ze-cryogenic.
Ngaphezu kwalokho, Ama-nanowires we-SiC nama-nanoparticles ayahlolwa ukuze asetshenziswe kumagajethi akhipha insimu, i-photocatalysis, kanye ne-biomedical imaging ngenxa ye-aspect ratio yabo ephezulu, ukuphepha kwamakhemikhali, kanye nezindawo zokuhlala ezisebenza ngogesi noma ezohwebo.
Njengoba isifundo sithuthuka, ukufakwa kwe-SiC ngqo kumasistimu we-quantum ahlukene kanye namadivayisi we-nanoelectromechanical (I-NEMS) ithembisa ukwandisa umsebenzi wayo ngaphezu kwezizinda zedizayini zendabuko.
4.3 Ukusimama kanye Nezinto Zomjikelezo Wokuphila Okufanele Ucatshangelwe
Ukukhiqizwa kwe-SiC kudla amandla, ikakhulukazi ku-high-temperature synthesis kanye nezinqubo ze-sintering.
Noma kunjalo, izinzuzo ezihlala njalo zezakhi ze-SiC– njengokuphila isikhathi eside, ukunciphisa ukugcinwa, kanye nokusebenza kwesistimu okuthuthukisiwe– ngokuvamile idlula umthelela wokuqala wemvelo.
Kuyaqhubeka izinhlelo zokudala imizila yokukhiqiza esimeme kakhudlwana, okuhlanganisa i-sintering esizwa yi-microwave, ukukhiqiza okungeziwe (3D ukuphrinta) kweSic, kanye nokugaywa kabusha kukadoti we-SiC kusuka ekucutshungulweni kwe-wafer ye-semiconductor.
Lezi ntuthuko zihlose ukunciphisa ukusetshenziswa kwamandla, nciphisa ukuchithwa kwezinto, kanye nokusekela isimo somnotho esiyindilinga emikhakheni yempahla ethuthukisiwe.
Ekuphetheni, I-silicon carbide porcelain imelela itshe eliyinhloko lesayensi yemikhiqizo yesimanje, ukuvala igebe phakathi kokuqina kwezakhiwo kanye nokuguquguquka okungokoqobo.
Ukusuka ekunikeni amandla amasistimu kagesi ahlanzekile kuya ekunikezeni amandla emisha ye-quantum, I-SiC isalokhu ichaza kabusha imingcele yalokho okungenzeka ekuklanyweni nasekucwaningweni kwesayensi.
Njengoba amasu okuphatha ethuthuka futhi kuvela izicelo ezintsha sha, ikusasa le-silicon carbide lihlala likhanya ngokwedlulele.
5. Umphakeli
I-Advanced Ceramics yasungulwa ngo-Okthoba 17, 2012, yibhizinisi lobuchwepheshe obuphezulu elizinikele ocwaningweni nasekuthuthukisweni, ukukhiqiza, ukucubungula, ukuthengisa kanye nezinsizakalo zobuchwepheshe zezinto eziphathelene ne-ceramic nemikhiqizo. Imikhiqizo yethu ihlanganisa kodwa ingagcini nje nge-Boron Carbide Ceramic Products, I-Boron Nitride Ceramic Products, Imikhiqizo ye-Silicon Carbide Ceramic, Imikhiqizo ye-Silicon Nitride Ceramic, I-Zirconium Dioxide Ceramic Products, njll. Uma unentshisekelo, sicela ukhululeke ukuxhumana nathi.([email protected])
Omaka: I-Silicon Carbide Ceramics,i-silicon carbide,intengo ye-silicon carbide
Zonke izindatshana nezithombe zivela ku-inthanethi. Uma kukhona izinkinga ze-copyright, sicela usithinte kusenesikhathi ukuze ususe.
Sibuze