1. Isakhelo esisisiseko kunye nePolymorphism yeSilicon Carbide
1.1 I-Crystal Chemistry kunye neentlobo ngeentlobo zePolytypic
(IiCeramics zeSilicon Carbide)
I-silicon carbide (SiC) yimveliso yeceramic ebambene ngokudibeneyo eyenziwe ngesilicon kunye neeathom zekhabhoni ezimiselwe kulawulo lwetetrahedral., ukuphuhlisa ileti yekristale ezinzileyo kwaye eyomeleleyo.
Ngokungafaniyo neekeramics ezininzi eziqhelekileyo, I-SiC ayinayo indawo yodwa, isakhelo sekristale eyahlukileyo; endaweni yoko, ibonisa imvakalelo emangalisayo eyaziwa ngokuba yipolytypism, apho kwa kwaea khemikhali inye inokumila iphelele 250 iipolytypes ezahlukeneyo, nganye iyahluka kulandelelwano lokupakishwa kweeleya zeathom ezisondeleleneyo.
Enye yeepolytypes ezinobuchwephesha kakhulu yi-3C-SiC (cubic, i-zinc blende framework), 4H-SiC, kunye ne-6H-SiC (zombini zinehexagonal), nganye ibonelela ngeendlela ezahlukeneyo ze-elektroniki, thermal, kunye nezakhiwo zoomatshini.
3C-SiC, ikwabizwa ngokuba yi-beta-SiC, iqhele ukwenziwa kumaqondo obushushu ancitshisiweyo kwaye iyametastable, ngelixa i-4H kunye ne-6H iipolytypes, ebizwa ngokuba yi-alpha-SiC, zizinzile ngakumbi kubushushu kwaye zisetyenziswa ngokubanzi kubushushu obuphezulu kunye nosetyenziso lwedijithali.
Le yantlukwano yolwakhiwo yenza ukuba kukhethwe imathiriyeli ekujoliswe kuyo ngokusekelwe kwisicelo esimiselweyo, nokuba ikwizixhobo zombane zombane, umatshini onesantya esiphezulu, okanye iindawo ezishushu ezishushu.
1.2 Iimpawu zoBonding kunye neSiphumo seNkalo
Ukuqina kweSiC kuvela kwiibhondi zayo eziqinileyo ze-Si-C, ezimfutshane ngobude kwaye zisingise kakhulu, okukhokelela kuthungelwano oluqinileyo olunamacala amathathu.
Olu lungiselelo lokudibanisa lubonisa amakhaya oomatshini amangalisayo, kuquka ukuqina okuphezulu (ngokuqhelekileyo 25– 30 I-GPa kuluhlu lweVickers), ukuqina okubalaseleyo kwe-flexural (Nangona ku 600 I-MPa yeentlobo ze-sintered), kunye nokuqina okulungileyo kwe-crack malunga nezinye iiseramikhi.
Ubume be-covalent bongeza kwi-SiC's superior conductivity thermal conductivity, enokufikelela kwi-120– 490 W/m · K ethembele kwi-polytype kunye nobunyulu– ziyafana nezinye iintsimbi kwaye zigqithise kakhulu iiporcelain ezininzi zezakhiwo.
Ngaphaya koko, I-SiC ibonisa i-coefficient ephantsi yophuhliso lwe-thermal, malunga ne-4.0– 5.6 × 10 ⁻⁶/ K, leyo, xa idibene ne-conductivity ephezulu ye-thermal, inikeza ukuxhathisa ukothuka okumangalisayo kwe-thermal.
Oku kuthetha ukuba amacandelo e-SiC anokwenza uhlengahlengiso olukhawulezayo lobushushu ngaphandle kokuqhekeka, uphawu olubalulekileyo kwiinkqubo ezifana neendawo zokufudumeza, abatshintshiselwano abashushu, kunye neenkqubo zokhuselo lwe-aerospace thermal.
2. I-Synthesis kunye nezicwangciso zokuPhatha iiCeramics zeSilicon Carbide
( IiCeramics zeSilicon Carbide)
2.1 IiNdlela zokuVelisa eziPhambili: Ukusuka kwi-Acheson ukuya kwi-Advanced Synthesis
Ukuveliswa kwemveliso ye-silicon carbide kubuyela emva kwenkulungwane ye-19 kunye nophuhliso lwenkqubo ye-Acheson., indlela yokunciphisa i-carbothermal apho i-silica ecocekileyo ephezulu (SiO ₂) kunye nekhabhoni (ngokuqhelekileyo i-oyile coke) zifudunyezwe kumaqondo obushushu angaphezulu 2200 ° C kwisifudumezi sombane.
Ngelixa le ndlela iqhubeka isetyenziswa ngokuqhelekileyo ukwenza i-SiC powder ekrwada ye-abrasives kunye ne-refractories., ivelisa izinto ezinokungcola kunye ne-particle morphology engalinganiyo, inciphisa ukusetyenziswa kwayo kwiiseramics ezisebenza kakhulu.
Uphuculo lwangoku lukhokelele kwezinye iindlela zokudityaniswa okufana nokubeka umphunga wekhemikhali (CVD), eyenza ukucoceka okuphezulu kakhulu, I-single-crystal SiC yezicelo ze-semiconductor, kunye ne-laser-assisted or plasma-enhanced synthesis ye-nanoscale powders.
Ezi ndlela zobuchule zivumela ulawulo oluchanekileyo kwi-stoichiometry, umlinganiselo wamasuntswana, kunye nobunyulu besigaba, ibalulekile ekulungiseni iSiC kwiimfuno zoyilo oluthile.
2.2 Uxinaniso kunye noLawulo lweMicrostructural
Phakathi kobona bunzima bubalaseleyo ekuveliseni iiporcelains ze-SiC kukufumana uxinaniso olupheleleyo ngenxa yokubambisana okuqinileyo kunye ne-coefficients ephantsi yokuzabalaza., ethintela ukucula okusemgangathweni.
Ukoyisa oku, kuye kwaphuhliswa iqela lezicwangciso-qhinga ezithile zoxinaniso.
Ukuhlangana kwe-reaction kubandakanya ukungena kwi-porous carbon preform kunye nesilicon etyhidiweyo, ephendula ukuphuhlisa i-SiC kwindawo, okukhokelela kwindawo ekufutshane ne-net-shape kunye nokushwabana okuncinci kakhulu.
I-sintering engenaxinzelelo ifumaneka ngokubandakanya izixhobo zokucoca ezifana ne-boron kunye nekhabhoni, ezibhengeza ukusasazwa komda wokuziinkozo kunye nokuphelisa iipores.
Ukucofa okufudumeleyo kunye noxinzelelo olushushu lwe-isostatic (I-HIP) sebenzisa uxinzelelo lwangaphandle ngexesha lokufudumeza, ukuvumela ukuxinana okupheleleyo kumanqanaba obushushu ancitshisiweyo kunye nokudala izinto ezinomatshini ophawulekayo wokuhlala okanye izakhiwo zorhwebo.
Ezi ndlela zokucubungula zenza kube lula ukwakhiwa kweengxenye ze-SiC kunye ne-fine-grained, microstructures ezifanayo, kubalulekile ekwandiseni amandla, nxiba ukumelana, kunye nengqibelelo.
3. UkuSebenza ngokuSebenzayo kunye nezicelo ezininzi
3.1 I-Thermal kunye ne-Mechanical Resilience kwiiNdawo eziMandundu
I-silicon carbide porcelains idityaniswa ngokwahlukileyo kwinkqubo kwiingxaki ezinzima ngenxa yokukwazi kwabo ukugcina uzinzo kwi-heat., ukumelana ne-oxidation, kwaye umelane nokunxitywa koomatshini.
Kwiindawo ezine-oxidizing, I-SiC yenza i-silica yokhuseleko (SiO ₂) umaleko kumphezulu wawo, enciphisa i-oxidation eyongezelelweyo kwaye ivumela ukusetyenziswa rhoqo kumanqanaba obushushu kangangoko 1600 °C.
Oku kuxhathisa i-oxidation, idityaniswe nokuxhathisa okuphezulu kwe-creep, yenza i-SiC ilungele iinxalenye kwiijenereyitha zegesi, amagumbi okutsha, kunye nomgangatho ophezulu wokutshintshiselana ngokufudumala.
Ubunzima bayo obukhethekileyo kunye nokuxhathisa kwe-abrasion kuyasetyenziswa kwizicelo zorhwebo ezifana neendawo zempompo ezinodaka., imilomo yesanti, kunye nezixhobo zokusika, apho iindlela ezizezinye zesinyithi ziya konakala ngokukhawuleza.
Ngaphezu koko, I-SiC yokunciphisa ukwanda kwe-thermal kunye nokuhamba okuphezulu kwe-thermal kuyenza ibe yimveliso ekhuthazwayo yezibuko kwi-telescopes kunye neenkqubo ze-laser., apho ukhuseleko olulinganayo phantsi kwebhayisekile eshushu lubalulekile.
3.2 Izicelo zoMbane kunye neSemiconductor
Ngaphandle kokusetyenziswa kwayo kolwakhiwo, I-silicon carbide idlala umsebenzi oguqulayo kwindawo yombane wamandla.
4H-SiC, ukuthi ngqo, inomsantsa obanzi we-roughly 3.2 eV, ukuvumela izixhobo ukuba zisebenze kumbane ophezulu, amaqondo obushushu, kunye nokutshintsha okuqhelekileyo kune-semiconductors esekelwe kwi-silicon.
Oku kubangela izixhobo zamandla– ezifana Schottky diodes, Ii-MOSFETs, kunye nee-JFETs– ngelahleko yamandla ethotywe kakhulu, ubungakanani obuncinci, kunye nokwandisa ukusebenza kakuhle, ezisetyenziswa kakhulu ngoku kwizithuthi zombane, iziguquli zemithombo ehlaziyekayo, kunye neenkqubo zegridi ezilumkileyo.
Ukungasebenzi kakuhle kombane kwindawo yeSiC (malunga 10 amaxesha e-silicon) ivumela iileya ezinqabileyo zokukhukuliseka, ukunciphisa ukuxhathisa kunye nokuphucula ukusebenza kwegajethi.
Ngaphaya koko, I-SiC ye-thermal conductivity ephezulu inceda ukukhupha ukufudumala ngempumelelo, ukunciphisa imfuno yeenkqubo zokupholisa umoya ezinkulu kunye nokwenza ukuba kuncinci ngakumbi, izinto ze-elektroniki ezithembekileyo.
4. Imida ekhulayo kunye neFuture Overview kwiSilicon Carbide Technology
4.1 Ukudibanisa kwi-Advanced Power kunye ne-Aerospace Solutions
Utshintsho oluqhubekayo kumandla acocekileyo kunye nothutho olunamandla luqhuba imfuno engahambelaniyo yezinto ezisekwe kwi-SiC..
Kwii-inverters zelanga, abaguquli bamandla omoya, kunye neenkqubo zolawulo lwebhetri, Izixhobo ze-SiC zongeza ekusebenzeni kokuguqulwa kwamandla aphezulu, ngokuthe ngqo ukunciphisa ukukhutshwa kwekhabhoni kunye neendleko zokusebenza.
Kwi-aerospace, I-SiC ifayibha eyomelezwe yi-SiC matrix composites (SiC/SiC CMCs) zidalelwa amaphiko einjini yomoya, i-combustor linings, kunye neenkqubo zokhuseleko ezishushu, ukubonelela ukonga iindleko zobunzima kunye neenzuzo zokusebenza ngaphezulu kwe-nickel-based superalloys.
Ezi composites ze-ceramic matrix zinokubaleka kumaqondo obushushu agqithayo 1200 °C, ukwenza ukuba kwenzeke kwisizukulwana esilandelayo seenjini zejethi ezinobungakanani obukhulu bokutyhala-to-ubunzima kunye nokuphuculwa kokusebenza kwerhasi.
4.2 I-Nanotechnology kunye ne-Quantum Applications
Kwi-nanoscale, I-silicon carbide ibonisa izakhiwo zequantum ezahlukileyo ezijongwayo kwiitekhnoloji zesizukulwana esilandelayo..
Iipolytypes ezithile ze-SiC zibamba ukuvulwa kwe-silicon kunye ne-divacancies esebenza njengemiba esebenzayo, isebenza njengamasuntswana amancinane equantum (qubits) kwikhompyuter yequantum kunye nezicelo zokuqaphela umyinge.
Ezi ngxaki zinokuqalwa nge-optically, lawulwa, kwaye ujonge ubushushu begumbi, inzuzo enkulu ngaphezu kwezinye iinkqubo ezininzi ze-quantum ezifuna iingxaki ze-cryogenic.
Ngaphezu koko, Ii-nanowires ze-SiC kunye ne-nanoparticles zijongwa ukuba zisetyenziswe kwigajethi yokukhupha intsimi, photocatalysis, kunye ne-biomedical imaging ngenxa yomlinganiselo wabo ophezulu, ukhuseleko lwekhemikhali, kunye neepropati zokuhlala okanye zorhwebo ezinokusebenziseka ngombane.
Njengoko isifundo siqhubela phambili, ukufakwa kwe-SiC ngqo kwiinkqubo ze-quantum ezinqamlezileyo kunye nezixhobo ze-nanoelectromechanical (NEMS) ithembisa ukwandisa umsebenzi wayo ngaphaya kwemida yoyilo lwemveli.
4.3 Ukuzinza kunye neZinto zoBomi ekufuneka ziqwalaselwe
Imveliso yeSiC idinga amandla amaninzi, ngakumbi kwi-high-temperature synthesis kunye neenkqubo ze-sintering.
Nangona kunjalo, iinzuzo ezihlala zihleli zezinto zeSiC– njengobude bobomi obude, ukunciphisa ukugcinwa, kunye nokusebenza kakuhle kwenkqubo– ngokuqhelekileyo igqithise impembelelo yokuqala ye-ikholoji.
Amanyathelo asendleleni okudala iindlela zokwenziwa kwemveliso ezizinzileyo, equka i-microwave-assisted sintering, imveliso eyongezelelweyo (3D yoshicilelo) yeSiC, kunye nokurisayikilishwa kwenkunkuma ye-SiC esuka kwi-semiconductor wafer processing.
Ezi nkqubela zijolise ekucutheni usetyenziso lwamandla, ukunciphisa inkcitho yezinto eziphathekayo, kunye nokuxhasa ubume boqoqosho obujikelezileyo kumacandelo ezinto eziphucukileyo.
Ukuququmbela, I-silicon carbide porcelains imele ilitye eliphambili lesayensi yeemveliso zangoku, ukuvala umsantsa phakathi kokuqina koyilo kunye nokuguquguquka okwenzekayo.
Ukusuka ekuvumeleni iinkqubo zamandla acocekileyo ukuya ekunikeni amandla amatsha e-quantum, I-SiC ihlala ichaza kwakhona imida yento enokwenzeka kuyilo kunye nophando lwesayensi.
Njengoko iindlela zokuphatha zihambela phambili kwaye kuvela izicelo ezintsha kraca, Ikamva le-silicon carbide lihlala liqaqambile ngokugqithisileyo.
5. Umthengisi
Advanced Ceramics yasekwa ngo-Oktobha 17, 2012, lishishini lobugcisa obuphezulu elizinikele kuphando nophuhliso, imveliso, ukuqhubekeka, ukuthengisa kunye neenkonzo zobugcisa bezixhobo ze-ceramic ezinxulumene neemveliso. Iimveliso zethu ziquka kodwa aziphelelanga kwiiMveliso zeCeramic zeBoron Carbide, IiMveliso zeCeramic zeBoron Nitride, Iimveliso zeCeramic zeSilicon Carbide, Iimveliso zeCeramic zeSilicon Nitride, IZirconium Dioxide yeeMveliso zeCeramic, njl. Ukuba unomdla, nceda uzive ukhululekile ukuqhagamshelana nathi.([email protected])
Iithegi: IiCeramics zeSilicon Carbide,i-silicon carbide,ixabiso le-silicon carbide
Onke amanqaku kunye nemifanekiso avela kwi-Intanethi. Ukuba kukho nayiphi na imiba ye-copyright, nceda uqhagamshelane nathi ngexesha lokucima.
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