1. Mazaunan Kayayyaki da Tsarin Tsari
1.1 Abubuwan Haɗin Kai na Silicon Carbide
(Silicon Carbide Crucibles)
Silicon carbide (SiC) wani abu ne na yumbu mai hade da silicon da carbon atom wanda aka saita a cikin tsarin latticework tetrahedral, yafi wanzuwa a kan 250 nau'ikan polytypic, da 6 h, 4H, kuma 3C yana daya daga cikin mafi dacewa.
Ƙaƙƙarfan haɗin kai na jagora yana ba da tauri na musamman (Mohs ~ 9.5), high thermal watsin (80– 120 W/(m · K )domin tsantsar lu'ulu'u kaɗai), da ban sha'awa rashin kuzarin sinadarai, sanya shi ɗaya daga cikin mafi ƙarfin kayan don yanayi mai tsanani.
Babban bandgap (2.9– 3.3 eV) yana tabbatar da keɓaɓɓen rufin lantarki a matakin zafin ɗaki da tsayin daka ga lalacewar radiation, yayin da ta rage thermal girma coefficient (~ 4.0 × 10 ⁻ / K) yana ba da gudummawar juriya na zafin zafi na musamman.
Waɗannan kaddarorin na asali kuma ana adana su a yanayin zafi da ya wuce 1600 ° C, ba da izinin SiC don adana mutuncin gine-gine a ƙarƙashin tsayin daka kai tsaye ga narke karafa, irin, da iskar gas mai amsawa.
Ba kamar oxide porcelains kamar alumina ba, SiC ba ya amsa da sauri tare da carbon ko rubuta ƙananan narkewar eutectics a cikin rage girman yanayi., muhimmiyar fa'ida a cikin sarrafa ƙarfe da semiconductor.
A lokacin da aka ƙirƙira su a cikin tukwane– tasoshin da aka yi don haɗawa da kayan dumi– SiC ya zarce kayan gargajiya kamar quartz, graphite, da alumina a duka tsawon rayuwa da amincin tsari.
1.2 Microstructure da Tsaron Injini
Ayyukan SiC crucibles an ɗaure su a hankali zuwa ƙananan tsarin su, wanda ya dogara da hanyar samar da kayan aikin da aka yi amfani da su.
Ana samar da crucibles-grades yawanci ta amfani da haɗin kai, Inda aka shigar da preforms na carbon mai ƙyalƙyali tare da siliki mai ruwa, samar da β-SiC ta hanyar amsawar Si(l) + C(s) → SiC(s).
Wannan tsari yana haifar da ƙayyadaddun tsari na SiC na farko tare da ragowar silicon mara tsada (5– 10%), wanda ke haɓaka haɓakar thermal amma yana iya ƙuntata amfani 1414 ° C(da narkewa factor na silicon).
Akasin haka, SiC crucibles an yi su gaba ɗaya ta hanyar ƙaƙƙarfan yanayi ko ruwa-lokaci sintering ta amfani da boron da carbon ko alumina-yttria additives., samun kusa-ka'idar yawa da mafi girma tsarki.
Waɗannan suna nuna ingantacciyar juriya mai raɗaɗi da tsaro na iskar shaka duk da haka sun fi tsada kuma suna da wahala a yi cikin manyan girma.
( Silicon Carbide Crucibles)
Mai laushi, interlacing microstructure na sintered SiC yana ba da juriya na musamman ga gajiyawar thermal da tarwatsewar inji, Muhimmiyar mahimmanci lokacin sarrafa siliki mai ruwa, Jamus, ko III-V mahadi a cikin hanyoyin ci gaban crystal.
Tsarin iyakar hatsi, ciki har da kula da matakai na biyu da porosity, yana taka muhimmiyar rawa wajen kafa ƙarfi mai ɗorewa a ƙarƙashin dumama cyclic da mahallin sinadarai masu tsauri..
2. Ayyukan thermal da Juriya na Muhalli
2.1 Ƙarfafa Ƙarfafawa da Rarraba Dumi
Ɗaya daga cikin ma'anar fa'idodin SiC crucibles shine babban ƙarfin zafin su, wanda damar sauri da kuma uniform dumi canja wuri a ko'ina high-zazzabi handling.
Sabanin samfuran ƙarancin ɗabi'a kamar hadedde silica (1– 2 W/(m · K)), SiC na watsar da makamashin zafi yadda ya kamata a ko'ina cikin bangon da ba a iya gani ba, Rage wurare masu zafi na gida da gradients masu zafi.
Wannan jituwa ya zama dole a cikin matakai kamar ƙarfafawar jagora na silicon multicrystalline don photovoltaics, inda yanayin yanayin yanayin kamanni kai tsaye yana tasiri babban inganci da kauri mai lahani.
Haɗin high conductivity da rage zafin zafi yana haifar da ma'aunin girgiza zafi na musamman (R = ku(1 - n)a/p), yin SiC crucibles da juriya ga fashe cikin sauri gida dumama ko sanyaya hawan keke.
Wannan yana ba da damar saurin tsarin dumama rates, ingantaccen kayan aiki, da kuma rage raguwar lokaci sakamakon gazawar da aka samu.
Haka kuma, Ƙarfin kayan don tsayawa tsayin daka don maimaita hawan keken zafi ba tare da lalacewa mai yawa ba ya sa ya dace don saita aiki a cikin masu dumama kasuwanci da ke gudana a sama. 1500 ° C.
2.2 Daidaituwar Oxidation da Chemical
A matsanancin yanayin zafi a cikin iska, SiC yana tafiya ta hanyar iskar oxygen mai sauƙi, kafa kariyar Layer na amorphous silica (SiO BIYU) a samanta: SiC + 3/2 O ₂ → SiO BIYU + CO.
Wannan glazed Layer yana ƙaruwa a yanayin zafi mai yawa, aiki azaman shingen watsawa wanda ke rage yawan iskar oxygen da kuma kare tsarin yumbu mai tushe..
Duk da haka, a cikin raguwar muhalli ko yanayi mara kyau– saba a semiconductor da karfe tacewa– oxidation yana danne, kuma SiC na ci gaba da kasancewa da daidaiton sinadarai tare da narkakkar siliki, aluminum mai nauyi, da slags da yawa.
Yana ƙin rushewa da amsawa tare da siliki mai ruwa har zuwa 1410 ° C, ko da yake tsawaita fallasa na iya haifar da ƙaramin ɗaukar carbon ko roughening mu'amala.
Mahimmanci, SiC baya gabatar da gurɓataccen ƙarfe cikin narke mai laushi, mahimmin buƙatu don masana'antar siliki ta lantarki inda gurbatar Fe, Ku, ko Cr yana buƙatar a kiyaye shi ƙasa da matakan ppb.
Duk da haka, Dole ne a kula yayin sarrafa karafa na ƙasa na alkaline ko oxides masu amsawa sosai, kamar yadda wasu na iya cire SiC a matsanancin yanayin zafi.
3. Hanyoyin samarwa da Kula da Inganci
3.1 Hanyoyin Gine-gine da Sarrafa Girma
Samar da sic crucibles ya haɗa da siffa, bushewa, da zafin jiki mai zafi ko tsintsaye, tare da dabarun da aka zaɓa bisa ga tsarkin da ake buƙata, girman, da aikace-aikace.
Dabarun ƙirƙira na yau da kullun sun haɗa da latsa isostatic, extrusion, da zamewa yadawa, kowanne yana ba da ma'auni daban-daban na madaidaicin girma da daidaituwar microstructural.
Don manyan crucibles da aka yi amfani da su a cikin yaduwar ingot na hasken rana, matsi na isostatic yana tabbatar da daidaiton kauri da kauri na bango, rage barazanar rashin daidaituwar haɓakar thermal girma da gazawa.
SiC mai haɗin kai (Farashin RBSC) crucibles suna da araha kuma ana amfani da su a wuraren da aka samo asali da kasuwannin hasken rana, ko da yake maimaita silicon ƙuntatawa iyakar bayani zafin jiki.
Farashin SiC (SSiC) iri-iri, yayin da karin tsada, magance na ƙwarai tsarki, tauri, da juriya ga yajin aikin sinadarai, sanya su dacewa don aikace-aikace masu daraja kamar GaAs ko InP crystal.
Ana iya kiran mashin daidaici bayan sintering don cimma matsananciyar juriya, musamman ga crucibles da aka yi amfani da su a tsaye gangaren daskare (VGF) ya da Czochralski (CZ) tsarin.
Ƙarshen yankin saman yana da mahimmanci don rage wuraren ƙulla ƙwayoyin cuta don aibi da kuma tabbatar da narkar da ke gudana cikin yaɗuwa.
3.2 Kula da Ingancin Inganci da Ingantaccen Ingantacce
Tabbatar da ingancin inganci yana da mahimmanci don tabbatar da dogaro da tsawon rayuwar SiC crucibles ƙarƙashin yanayin aiki..
Dabarun bincike marasa lalacewa irin su ultrasonic screening da X-ray tomography ana amfani da su don gano rarrabuwar ciki., sarari, ko kauri bambancin.
Binciken sinadarai ta amfani da XRF ko ICP-MS yana tabbatar da ƙananan matakan gurɓataccen ƙarfe, yayin da zafin zafin jiki da ƙarfin sassauƙa an ƙaddara don tabbatar da daidaiton samfur.
Sau da yawa ana fuskantar gwajin keke na thermal na crucibles kafin bayarwa don tantance yiwuwar gazawar hanyoyin..
Saita ganowa da ƙwarewa sun zama gama gari a cikin sarƙoƙin samar da wutar lantarki da na sararin samaniya, inda gazawar bangaren zai iya haifar da asarar samar da farashi mai tsada.
4. Aikace-aikace da Tasirin Fasaha
4.1 Semiconductor da Masana'antu na Photovoltaic
Silicon carbide crucibles suna taka muhimmiyar rawa a cikin kera siliki mai tsabta don duka microelectronics da ƙwayoyin rana..
A cikin tanda mai ƙarfi na jagora don multicrystalline photovoltaic ingots, manyan SiC crucibles suna aiki azaman babban akwati don siliki mai ƙarfi, dorewar matakan zafin jiki ya wuce 1500 ° C don yawan hawan keke.
Rashin rashin kuzarin sinadaran su yana dakatar da gurɓatawa, yayin da tsaro na thermal su ke tabbatar da daidaiton gaba, yana haifar da wafers masu inganci tare da ƙarancin matsuguni da iyakokin hatsi.
Wasu masana'antun suna shafa yankin saman ciki tare da silicon nitride ko silica don rage haɗin gwiwa da sauƙaƙe sakin ingot bayan sanyi..
A cikin sikelin bincike-Czochralski girma na fili semiconductor, Ana amfani da ƙananan sikelin SiC don riƙe narke na GaAs, InSb, ya da CDTe, Inda reactivity na gefe da tsaro mai girma ke da mahimmanci.
4.2 Karfe, Masana'anta, da kuma Emerging Technologies
Bayan semiconductor, SiC crucibles ba makawa ne a cikin tace ƙarfe, gami shiri, da hanyoyin narkewar sikelin dakin gwaje-gwaje da suka shafi aluminum, jan karfe, da abubuwan da ba kasafai ba.
Juriyarsu ga girgizar zafi da yazawa ya sa su dace da shigar da tsarin dumama juriya a cikin kafuwar, inda suke rayuwa da graphite da alumina madadin ta keke da yawa.
A ƙari masana'antu na m karafa, Ana amfani da kwantena na SiC a cikin narkewar shigar da injin tsabtace injin don hana lalacewa da gurɓatawa..
Aikace-aikace masu tasowa sun ƙunshi narkakkar gishiri masu kunnawa da tsarin makamashin hasken rana mai da hankali, inda tasoshin SiC na iya haɗawa da gishiri mai zafin jiki ko karafa na ruwa don ajiyar makamashi mai zafi.
Tare da ci gaba da ci gaba a cikin sabbin abubuwa na sintering da zane mai sutura, SiC crucibles sun shirya don tallafawa sarrafa kayan zamani na gaba, yin shi yiwuwa ga mai tsabta, yafi inganci, da tsarin zafi na kasuwanci mai daidaitawa.
A sake fasalin, Silicon carbide crucibles suna wakiltar fasaha mai ba da izini mai mahimmanci a cikin haɗin samfur mai zafin jiki, hada ban mamaki thermal, inji, da ingancin sinadarai a cikin sashin injiniya guda ɗaya.
Yawan karɓuwansu a ko'ina cikin semiconductor, hasken rana, da masana'antun ƙarfe suna ba da haske game da aikinsu a matsayin tushen tushen farantin kasuwanci na zamani..
5. Mai sayarwa
Advanced Ceramics kafa a Oktoba 17, 2012, babban kamfani ne na fasaha mai himma ga bincike da haɓakawa, samarwa, sarrafawa, tallace-tallace da sabis na fasaha na yumbu dangi kayan da samfurori. Kayayyakinmu sun haɗa amma ba'a iyakance ga samfuran yumbura na Boron Carbide ba, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, da dai sauransu. Idan kuna sha'awar, don Allah a ji daɗin tuntuɓar mu.
Tags: Silicon Carbide Crucibles, Silicon Carbide Ceramic, Silicon Carbide Ceramic Crucibles
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