1. Moddiy turar joylar va strukturaviy yaxlitlik
1.1 Silikon karbidning o'ziga xos xususiyatlari
(Silikon karbidli tigellar)
Silikon karbid (SiC) is a covalent ceramic substance made up of silicon and carbon atoms set up in a tetrahedral latticework framework, mainly existing in over 250 polytypic types, with 6H, 4H, and 3C being one of the most highly appropriate.
Its solid directional bonding imparts exceptional hardness (Mohs ~ 9.5), high thermal conductivity (80– 120 W/(m · K )for pure solitary crystals), and impressive chemical inertness, making it one of one of the most robust materials for severe atmospheres.
Katta tarmoqli oralig'i (2.9– 3.3 eV) makes sure exceptional electric insulation at room temperature level and high resistance to radiation damages, while its reduced thermal growth coefficient (~ 4.0 × 10 ⁻⁶/ K) contributes to exceptional thermal shock resistance.
These intrinsic properties are preserved also at temperatures going beyond 1600 ° C, permitting SiC to preserve architectural integrity under prolonged direct exposure to thaw steels, slags, and reactive gases.
Unlike oxide porcelains such as alumina, SiC does not respond readily with carbon or type low-melting eutectics in minimizing ambiences, an important advantage in metallurgical and semiconductor handling.
When fabricated into crucibles– vessels made to include and warmth materials– SiC exceeds traditional materials like quartz, graphite, and alumina in both life expectancy and process integrity.
1.2 Microstructure and Mechanical Security
The performance of SiC crucibles is carefully tied to their microstructure, which relies on the production method and sintering ingredients used.
Refractory-grade crucibles are typically produced using response bonding, where porous carbon preforms are penetrated with liquified silicon, forming β-SiC via the response Si(l) + C(s) → SiC(s).
This process generates a composite structure of primary SiC with residual cost-free silicon (5– 10%), which enhances thermal conductivity but might restrict usage over 1414 ° C(the melting factor of silicon).
Conversely, completely sintered SiC crucibles are made through solid-state or liquid-phase sintering utilizing boron and carbon or alumina-yttria additives, attaining near-theoretical density and greater purity.
These display superior creep resistance and oxidation security however are more costly and tough to make in large sizes.
( Silikon karbidli tigellar)
The fine-grained, interlacing microstructure of sintered SiC provides exceptional resistance to thermal exhaustion and mechanical disintegration, critical when handling liquified silicon, germanium, or III-V compounds in crystal development procedures.
Grain border design, including the control of second stages and porosity, tsiklik isitish va agressiv kimyoviy muhitlar ostida doimiy mustahkamlikni o'rnatishda muhim funktsiyani bajaradi..
2. Termal ishlash va atrof-muhitga qarshilik
2.1 Issiqlik o'tkazuvchanligi va issiq taqsimot
SiC tigellarining aniq afzalliklaridan biri ularning yuqori issiqlik o'tkazuvchanligidir, bu yuqori haroratli ishlov berish davomida tez va bir xilda issiq uzatish imkonini beradi.
Integratsiyalashgan silika kabi past o'tkazuvchanlik mahsulotlaridan farqli o'laroq (1– 2 W/(m · K)), SiC issiqlik energiyasini tigel devori bo'ylab samarali ravishda tarqatadi, mahalliylashtirilgan issiq nuqtalarni va termal gradyanlarni kamaytirish.
Ushbu uyg'unlik fotovoltaiklar uchun ko'p kristalli kremniyning yo'nalishli qotib qolishi kabi jarayonlarda zarurdir., Bu erda harorat darajasining bir xilligi kristalning yuqori sifati va nuqson qalinligiga to'g'ridan-to'g'ri ta'sir qiladi.
Yuqori o'tkazuvchanlik va kamaytirilgan termal kengayish aralashmasi juda yuqori termal zarba mezonini keltirib chiqaradi. (R = k(1 - n)a/ p), SiC tigellarini uyni tez isitish yoki sovutish davrlarida yorilishga chidamli qilish.
Bu isitish tizimining rampa tezligini tezroq qilish imkonini beradi, yaxshilangan o'tkazish qobiliyati, va tigelning ishdan chiqishi natijasida ishlamay qolish vaqti kamaydi.
Bundan tashqari, Materialning sezilarli darajada vayron bo'lmasdan takroriy termal velosipedda turish qobiliyati uni yuqorida ishlaydigan tijorat isitgichlarida ishlov berish uchun mos qiladi. 1500 ° C.
2.2 Oksidlanish va kimyoviy moslik
Havodagi yuqori harorat darajasida, SiC oson oksidlanishdan o'tadi, amorf kremniyning himoya qatlamini hosil qiladi (SiO IKKI) uning yuzasida: SiC + 3/2 O ₂ → SiO IKKI + CO.
Bu sirlangan qatlam yuqori haroratlarda zichlashadi, acting as a diffusion barrier that slows more oxidation and protects the underlying ceramic structure.
Biroq, in decreasing environments or vacuum conditions– usual in semiconductor and steel refining– oxidation is suppressed, and SiC continues to be chemically steady versus molten silicon, engil alyuminiy, and several slags.
It resists dissolution and response with liquified silicon up to 1410 ° C, although extended exposure can result in small carbon pick-up or interface roughening.
Crucially, SiC does not present metallic contaminations into delicate melts, a crucial need for electronic-grade silicon manufacturing where contamination by Fe, Cu, or Cr needs to be kept below ppb levels.
Biroq, care has to be taken when processing alkaline earth metals or very responsive oxides, as some can wear away SiC at severe temperature levels.
3. Ishlab chiqarish jarayonlari va sifat nazorati
3.1 Qurilish usullari va o'lchovlarni nazorat qilish
SiC tigellarini ishlab chiqarish shakllantirishni o'z ichiga oladi, quritish, va yuqori haroratli sinterlash yoki sızma, talab qilingan tozalik asosida tanlangan texnikalar bilan, hajmi, va ilova.
Oddiy yaratish strategiyalari izostatik presslashni o'z ichiga oladi, ekstruziya, va slaydni yoyish, Ularning har biri turli darajadagi o'lchamli aniqlik va mikro tuzilmaviy bir xillikni taklif qiladi.
Quyosh ingotlarini yoyishda ishlatiladigan katta tigellar uchun, izostatik presslash devor sirtining qalinligi va qalinligini ta'minlaydi, notekis termal o'sish va buzilish xavfini kamaytirish.
Reaktsiya bilan bog'langan SiC (RBSC) tigellar hamyonbop va quyish zavodlari va quyosh bozorlarida keng qo'llaniladi, takrorlanuvchi kremniy cheklovlar maksimal eritma harorati bo'lsa-da.
Sinterlangan SiC (SSiC) versiyalari, qo'shimcha xarajatlar bilan birga, ajoyib soflik bilan shug'ullanadi, qattiqlik, va kimyoviy zarbaga qarshilik, ularni GaAs yoki InP kristallarini ishlab chiqish kabi yuqori qiymatli ilovalar uchun mos qilish.
Qattiq qarshilikka erishish uchun sinterlashdan keyin nozik ishlov berish talab qilinishi mumkin, ayniqsa, tik nishabli muzlashda ishlatiladigan tigellar uchun (VGF) yoki Czochralski (CZ) tizimlari.
Sirt maydonini pardozlash nuqsonlar uchun yadrolanish joylarini kamaytirish va tarqalish davomida silliq eritma oqimini ta'minlash uchun juda muhimdir..
3.2 Sifat nazorati va samaradorlikni tekshirish
Qattiq sifat kafolati talab qilinadigan ish sharoitlarida SiC tigellarining ishonchliligi va uzoq umrini ta'minlash uchun muhimdir..
Ichki bo'linishlarni aniqlash uchun ultratovushli skrining va rentgen tomografiyasi kabi buzilmaydigan tahlil usullari qo'llaniladi., bo'shliqlar, yoki qalinligi o'zgarishi.
XRF yoki ICP-MS yordamida kimyoviy tahlil metall ifloslanishning past darajasini tasdiqlaydi, issiqlik o'tkazuvchanligi va egilish kuchi mahsulotning mustahkamligini tekshirish uchun aniqlanadi.
Mumkin bo'lgan ishlamay qolish usullarini aniqlash uchun tigellar etkazib berishdan oldin ko'pincha simulyatsiya qilingan termal velosiped tekshiruvidan o'tkaziladi..
To'plamning kuzatilishi va akkreditatsiyasi yarimo'tkazgich va aerokosmik ta'minot zanjirlarida keng tarqalgan, komponentlarning ishdan chiqishi qimmat ishlab chiqarish yo'qotishlariga olib kelishi mumkin.
4. Ilovalar va texnik effekt
4.1 Yarimo'tkazgichlar va fotovoltaik sanoat
Silikon karbid tigellari mikroelektronika va quyosh xujayralari uchun yuqori toza kremniy ishlab chiqarishda hal qiluvchi rol o'ynaydi..
Ko'p kristalli fotovoltaik ingotlar uchun yo'nalishli qotish pechlarida, Katta SiC tigellar suyultirilgan kremniy uchun asosiy idish vazifasini bajaradi, harorat darajasini saqlab turish 1500 Ko'p tsikllar uchun ° C.
Ularning kimyoviy inertligi ifloslanishni to'xtatadi, ularning termal xavfsizligi esa izchil qotish jabhalarini ta'minlaydi, kamroq noto'g'ri joylashtirish va don chegaralari bilan yuqori sifatli gofretlarga olib keladi.
Ba'zi ishlab chiqaruvchilar qo'shimcha ravishda bog'lanishni kamaytirish va sovutgandan keyin ingot chiqishini osonlashtirish uchun ichki sirt maydonini kremniy nitridi yoki silika bilan qoplaydi..
Murakkab yarimo'tkazgichlarning tadqiqot miqyosidagi Czochralski o'sishida, GaA larning erishini ushlab turish uchun kichikroq o'lchamdagi SiC tigellardan foydalaniladi, InSb, yoki CdTe, bu erda marjinal reaktivlik va o'lchovli xavfsizlik muhim ahamiyatga ega.
4.2 Metallurgiya, Zavod, va Rivojlanayotgan texnologiyalar
Yarimo'tkazgichlardan tashqari, SiC tigellari po'latni qayta ishlashda ajralmas hisoblanadi, qotishma tayyorlash, va alyuminiyni o'z ichiga olgan laboratoriya miqyosidagi eritish protseduralari, mis, va noyob yer elementlari.
Their resistance to thermal shock and erosion makes them suitable for induction and resistance heating systems in foundries, where they outlive graphite and alumina alternatives by several cycles.
In additive manufacturing of responsive metals, SiC containers are made use of in vacuum cleaner induction melting to prevent crucible malfunction and contamination.
Arising applications consist of molten salt activators and focused solar energy systems, where SiC vessels may include high-temperature salts or fluid metals for thermal energy storage.
With continuous developments in sintering innovation and covering design, SiC crucibles are poised to support next-generation materials processing, making it possible for cleaner, much more efficient, and scalable commercial thermal systems.
Xulosa ichida, kremniy karbid tigellari yuqori haroratli mahsulot sintezida muhim ruxsat beruvchi texnologiyadir, ajoyib termal birlashtirgan, mexanik, va bitta muhandislik qismida kimyoviy samaradorlik.
Ular butun yarimo'tkazgichlarda keng tarqalgan, quyosh, va metallurgiya sanoati zamonaviy tijoriy chinnilarning asosi sifatida ularning burchini ta'kidlaydi..
5. Sotuvchi
Advanced Ceramics oktyabr oyida tashkil etilgan 17, 2012, tadqiqot va ishlanmalarga sodiq bo'lgan yuqori texnologiyali korxona, ishlab chiqarish, qayta ishlash, sopol nisbiy materiallar va mahsulotlarni sotish va texnik xizmat ko'rsatish. Mahsulotlarimiz bor karbidli keramika mahsulotlarini o'z ichiga oladi, lekin ular bilan cheklanmaydi, Bor nitridi keramika mahsulotlari, Silikon karbid seramika mahsulotlari, Silikon nitridli keramika mahsulotlari, Zirkonyum dioksid seramika mahsulotlari, va hokazo. Agar qiziqsangiz, iltimos biz bilan bog'laning.
Teglar: Silikon karbidli tigellar, Silikon karbid keramika, Silikon karbidli keramik tigellar
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