1. Izindawo zokuhlala Ezibalulekile kanye Nobuqotho Besakhiwo
1.1 Izici zangaphakathi zeSilicon Carbide
(I-Silicon Carbide Crucibles)
I-silicon carbide (I-SiC) i-covalent Ceramic substance eyenziwe nge-silicon nama-athomu e-carbon amiswe kuhlaka lwe-tetrahedral latticework framework., ikakhulukazi ekhona phezu 250 izinhlobo ze-polytypic, nge 6h, 4H, futhi i-3C ingezinye ezifanele kakhulu.
Isibopho sayo esiqondile esiqondile sinikeza ubulukhuni obungavamile (Mohs ~ 9.5), high conductivity ezishisayo (80– 120 W/(m · k )amakristalu ahlanzekile ayedwa), kanye nokungangeni kwamakhemikhali okuhlaba umxhwele, okwenza kube ngenye yezinto eziqine kakhulu zomkhathi onzima.
I-bandgap enkulu (2.9– 3.3 eV) yenza isiqiniseko sokuthi ukufakwa kukagesi okukhethekile kusezingeni lokushisa legumbi kanye nokumelana okuphezulu nokulimala kwemisebe, kuyilapho i-coefficient yayo yehlisiwe yokukhula kokushisa (~ 4.0 × 10 ⁻⁶/ K) kunomthelela ekumelaneni nokushaqeka okushisayo okukhethekile.
Lezi zakhiwo zangaphakathi zigcinwa futhi emazingeni okushisa adlulayo 1600 °C, ukuvumela i-SiC ukuthi ilondoloze ubuqotho bezakhiwo ngaphansi kokuchayeka okuqondile isikhathi eside ezinsimbi ezincibilikayo, umusa, namagesi asebenzayo.
Ngokungafani nama-porcelain oxide njenge-alumina, I-SiC ayiphenduli kalula ngekhabhoni noma thayipha i-eutectics encibilika kancane ekunciphiseni ama-ambience, inzuzo ebalulekile ekuphatheni kwe-metallurgical kanye ne-semiconductor.
Lapho kwakhiwa ama-crucibles– izitsha ezenziwe ukufaka nezinto zokufudumala– I-SiC idlula izinto zendabuko ezifana ne-quartz, i-graphite, kanye ne-alumina kukho kokubili ubude bempilo kanye nenqubo yobuqotho.
1.2 I-Microstructure kanye Nokuphepha Kwemishini
Ukusebenza kwe-SiC crucibles kuboshelwe ngokucophelela ku-microstructure yabo, encike endleleni yokukhiqiza kanye nezithako zokugcoba ezisetshenzisiwe.
I-Refractory-grade crucibles ngokuvamile ikhiqizwa kusetshenziswa isibopho sokuphendula, lapho i-porous carbon preforms ingena khona nge-silicon ewuketshezi, ukwakha i-β-SiC ngempendulo ethi Si(l) + C(s) → SiC(s).
Le nqubo ikhiqiza uhlaka oluyinhlanganisela lwe-SiC eyinhloko ene-silicon yensalela yamahhala (5– 10%), ethuthukisa ukusebenza kwe-thermal kodwa ingase ikhawulele ukusetshenziswa 1414 °C(isici sokuncibilika kwe-silicon).
Ngokuphambene, I-Sintered SiC crucibles yenziwa nge-solid-state noma i-liquid-phase sintering kusetshenziswa izithasiselo ze-boron ne-carbon noma i-alumina-yttria., ukuthola ukuminyana okuseduze kwethiyori kanye nobumsulwa obukhulu.
Lezi zibonisa ukumelana ne-creep ephakeme kanye nokuphepha kwe-oxidation nokho kubiza kakhulu futhi kunzima ukwenza ngamasayizi amakhulu..
( I-Silicon Carbide Crucibles)
I-cone-grained, I-interlacing microstructure ye-Sintered SiC inikeza ukumelana okungavamile ekuphelelweni okushisayo kanye nokuhlakazeka komshini., okubalulekile lapho uphatha i-silicon ewuketshezi, i-germanium, noma izinhlanganisela ze-III-V ezinqubweni zokuthuthukiswa kwekristalu.
Idizayini yomngcele wokusanhlamvu, kuhlanganise nokulawulwa kwezigaba zesibili kanye ne-porosity, idlala umsebenzi obalulekile ekusunguleni ukuqina okuhlala njalo ngaphansi kokushisisa okujikelezayo kanye nezindawo zamakhemikhali ezinolaka.
2. Ukusebenza Okushisayo kanye Nokumelana Nemvelo
2.1 I-Thermal Conductivity kanye Nokusabalalisa Okufudumele
Enye yezinzuzo ezichazayo ze-SiC crucibles ukuthi i-thermal conductivity ephezulu, okuvumela ukudluliswa okufudumele okusheshayo nokufanayo kulo lonke ukuphatha izinga lokushisa eliphezulu.
Ngokuphambene nemikhiqizo ye-low-conductivity efana ne-silica ehlanganisiwe (1– 2 W/(m · k)), I-SiC ihlakaza kahle amandla ashisayo kulo lonke udonga oluyi-crucible, ukunciphisa izindawo ezishisayo zendawo kanye nama-thermal gradients.
Lokhu kuvumelana kuyadingeka ezinkambisweni ezifana nokuqiniswa kokuqondisa kwe-silicon ye-multicrystalline ye-photovoltaics, lapho izinga lokushisa lilingana ne-homogeneity eqondile lithinta ikhwalithi ephezulu yekristalu nokuqina kwamaphutha.
Ingxube ye-conductivity ephezulu kanye nokunwetshwa kwe-thermal okuncishisiwe kubangela umbandela wokushaqeka okuphezulu kakhulu (R = k(1 -n)a/p), okwenza ama-SiC crucibles amelane nokuqhekeka kuyo yonke imijikelezo yokushisa ekhaya noma yokupholisa okusheshayo.
Lokhu kuvumela izilinganiso zerempu yesistimu yokushisisa ngokushesha, ukwenziwa ngcono, kanye nokunciphisa isikhathi sokuphumula ngenxa yokwehluleka okukhulu.
Ngaphezu kwalokho, Ikhono lempahla lokumela ukuhamba ngebhayisikili elishisayo eliphindaphindiwe ngaphandle kokucekelwa phansi okukhulu kuyenza ifaneleke ukusethwa kwezifudumezi ezisebenza ngenhla. 1500 °C.
2.2 I-Oxidation kanye Nokuhambisana Kwamakhemikhali
Emazingeni okushisa aphakeme emoyeni, I-SiC ihamba nge-oxidation elula, ukwakha ungqimba oluvikelayo lwe-amorphous silica (SIO LESIBILI) ebusweni bayo: I-SiC + 3/2 O ₂ → SiO TWO + CO.
Lesi singqimba esicwebezelisiwe siminyene emazingeni okushisa aphezulu, isebenza njengesithiyo sokusabalalisa esibambezela i-oxidation eyengeziwe futhi sivikele isakhiwo se-ceramic esingaphansi.
Nokho, ezindaweni ezinciphayo noma ezimweni ze-vacuum– evamile ku-semiconductor kanye nokucwengisiswa kwensimbi– i-oxidation iyancishiswa, futhi i-SiC iyaqhubeka nokungaguquki ngamakhemikhali uma iqhathaniswa ne-silicon encibilikisiwe, i-aluminium enesisindo esincane, kanye nama-slags amaningi.
Imelana nokuhlakazeka nokusabela nge-silicon ewuketshezi kuze kube 1410 °C, nakuba ukuchayeka okunwetshiwe kungaholela ekuthathweni okuncane kwekhabhoni noma ekusetshenzisweni kwesixhumi esibonakalayo.
Ngokubalulekile, I-SiC ayibonisi ukungcoliswa kwensimbi ekuncibilikeni okuthambile, isidingo esibalulekile sokwenziwa kwe-silicon yebanga le-elekthronikhi lapho kungcoliswa khona ngu-Fe, Cu, noma i-Cr idinga ukugcinwa ngaphansi kwamazinga e-ppb.
Nokho, ukunakekelwa kufanele kuthathwe lapho kulungiswa izinsimbi zomhlaba ezine-alkaline noma ama-oxide asabela kakhulu, njengoba abanye bengagugisa i-SiC emazingeni okushisa aqinile.
3. Izinqubo Zokukhiqiza Nokulawulwa Kwekhwalithi
3.1 Izindlela Zokwakha Nokulawula Ubukhulu
Ukukhiqizwa kwe-SiC crucibles kuhlanganisa ukubunjwa, ukomisa, kanye ne-high-temperature sintering noma i-sepage, ngamasu akhethiwe ngokusekelwe ekuhlanzekeni okudingekayo, usayizi, kanye nesicelo.
Amasu okudala ajwayelekile afaka ukucindezela kwe-isostatic, i-extrusion, nokusabalalisa ama-slide, ngayinye inikezela ngamazinga ahlukene okunemba kobukhulu kanye nokufana kwesakhiwo esincane.
Kuma-crucibles amakhulu asetshenziswa ekusakazweni kwe-ingot yelanga, Ukucindezela kwe-isostatic kuqinisekisa ukushuba nokuqina kodonga olungaguquki, ukunciphisa usongo lokukhula kokushisa okungalingani nokwehluleka.
I-Reaction-bonded SiC (I-RBSC) crucibles ziyathengeka futhi ngokuvamile isetshenziswa Foundries kanye nezimakethe solar, nakuba imikhawulo ye-silicon ephindaphindayo izinga lokushisa eliphezulu lesisombululo.
I-Sintered SiC (I-SSiC) izinguqulo, kuyilapho kubiza kakhulu, phatha ubumsulwa obumangalisayo, ubulukhuni, kanye nokumelana nesiteleka samakhemikhali, ukuzenza zifaneleke ezinhlelweni zokusebenza zenani eliphezulu njenge-GaAs noma i-InP crystal development.
Ukunemba komshini ngemva kokucwilisa kungase kubizwe ukuze kuzuzwe ukumelana okuqinile, ikakhulukazi ama-crucibles asetshenziswa ekumiseni kwemithambeka eqondile (VGF) noma Czochralski (CZ) izinhlelo.
Ukuqedwa kwendawo engaphezulu kubalulekile ukuze kuncishiswe izizinda ze-nucleation zamaphutha nokuqinisekisa ukugeleza okuncibilika okubushelelezi phakathi nokusabalala.
3.2 Ukulawulwa Kwekhwalithi Nokuqinisekiswa Kokusebenza
Ukuqinisekiswa kwekhwalithi okuqinile kubalulekile ukuqinisekisa ukwethembeka nempilo ende ye-SiC crucibles ngaphansi kwezimo zokusebenza ezidingayo.
Izindlela zokuhlaziya ezingabhubhisi ezifana ne-ultrasonic screening kanye ne-X-ray tomography zisetshenziselwa ukubona ukuhlukana kwangaphakathi., izikhala, noma ukuhluka kokuqina.
Ukuhlaziywa kwamakhemikhali kusetshenziswa i-XRF noma i-ICP-MS kuqinisekisa amadigri aphansi okungcoliswa kwensimbi, kuyilapho i-thermal conductivity namandla e-flexural kunqunywa ukuqinisekisa ukuhambisana komkhiqizo.
Ama-crucibles avame ukufakwa ekuhlolweni kwebhayisikili elishisayo ngaphambi kokulethwa ukuze kutholakale izindlela ezingaphumelelanga.
Ukulandelelwa kwesethi kanye nokugunyazwa kuvamile kumaketanga okuhlinzeka nge-semiconductor kanye ne-aerospace, lapho ukwehluleka kwengxenye kungaletha ukulahlekelwa kokukhiqiza okunenani elikhulu.
4. Izicelo kanye Nomphumela Wezobuchwepheshe
4.1 I-Semiconductor kanye ne-Photovoltaic Industries
I-silicon carbide crucibles idlala indima ebalulekile ekwakhiweni kwe-silicon ehlanzekile yawo womabili ama-microelectronics namaseli elanga..
Kumafurnace okuqinisa okuqondisayo ama-multicrystalline photovoltaic ingots, I-SiC crucibles enkulu isebenza njengesiqukathi esiyinhloko se-silicon e-liquified, ukugcina amazinga okushisa ngaphezulu 1500 ° C emijikelezweni eminingi.
Ukungangeni kwawo kwamakhemikhali kumisa ukungcola, kuyilapho ukuphepha kwabo okushisayo kuqinisekisa imingcele yokuqinisa engaguquki, okuholela kumawafa ekhwalithi ephezulu anokuduka okuncane kanye nemingcele yokusanhlamvu.
Abanye abakhiqizi bamboza indawo yangaphakathi nge-silicon nitride noma i-silica ukuze banciphise isibopho futhi benze lula ukukhululwa kwe-ingot ngemva kokuphola..
Esikalini socwaningo ukukhula kwe-Czochralski kwama-semiconductors ahlanganisiwe, ama-SiC crucibles amancane amancane asetshenziswa ukubamba ukuncibilika kwama-GaAs, I-InSb, noma i-CdTe, lapho ukusebenza kabusha okuseceleni nokuphepha kobukhulu kubalulekile.
4.2 I-Metallurgy, Ifekthri, kanye ne-Emerging Technologies
Ngaphandle kwama-semiconductors, I-SiC crucibles ibalulekile ekucwengeni insimbi, ukulungiswa kwe-alloy, kanye nezinqubo zokuncibilika kwesikali selabhorethri ezibandakanya i-aluminium, ithusi, kanye nezakhi zomhlaba ezingavamile.
Ukumelana kwabo nokushaqeka okushisayo nokuguguleka kubenza bafanelekele izinhlelo zokushisa zokungeniswa kanye nokumelana nezisekelo, lapho bephila khona kunezinye izindlela ze-graphite ne-alumina ngemijikelezo eminingana.
Ekwenziweni okungeziwe kwezinsimbi ezisabelayo, Iziqukathi ze-SiC zisetshenziswa ekuncibilikeni kokufakwa kwe-vacuum cleaner ukuvimbela ukungasebenzi kahle nokungcoliswa..
Izinhlelo ezisafufusa zihlanganisa izicupha usawoti ezincibilikisiwe kanye nezinhlelo zamandla elanga agxile, lapho imikhumbi ye-SiC ingase ihlanganise nosawoti osezingeni eliphezulu noma izinsimbi eziwuketshezi zokugcina amandla ashisayo.
Ngokuthuthuka okuqhubekayo ekusungulweni kwe-sintering kanye nomklamo wokumboza, Ama-SiC crucibles alungele ukusekela ukucubungula kwezinto zesizukulwane esilandelayo, okwenza kube lula ukuhlanza, esebenza kahle kakhulu, kanye nezinhlelo ezishisayo zokuhweba ezishisayo.
Ngokufingqa, I-silicon carbide crucibles imele ubuchwepheshe obuvumelayo ekuhlanganiseni umkhiqizo wokushisa okuphezulu, ukuhlanganisa ezishisayo eziphawulekayo, okomshini, kanye nokusebenza kahle kwamakhemikhali engxenyeni eyodwa yobunjiniyela.
Ukutholwa kwabo okuvame kakhulu kuyo yonke i-semiconductor, ilanga, kanye nezimboni ze-metallurgical zigqamisa umsebenzi wazo njengesisekelo sezitsha zobumba zezentengiselwano zesimanje.
5. Umthengisi
I-Advanced Ceramics yasungulwa ngo-Okthoba 17, 2012, yibhizinisi lobuchwepheshe obuphezulu elizinikele ocwaningweni nasekuthuthukisweni, ukukhiqiza, ukucubungula, ukuthengisa kanye nezinsizakalo zobuchwepheshe zezinto eziphathelene ne-ceramic nemikhiqizo. Imikhiqizo yethu ihlanganisa kodwa ingagcini nje nge-Boron Carbide Ceramic Products, I-Boron Nitride Ceramic Products, Imikhiqizo ye-Silicon Carbide Ceramic, Imikhiqizo ye-Silicon Nitride Ceramic, I-Zirconium Dioxide Ceramic Products, njll. Uma unentshisekelo, sicela ukhululeke ukuxhumana nathi.
Omaka: I-Silicon Carbide Crucibles, I-Silicon Carbide Ceramic, I-Silicon Carbide Ceramic Crucibles
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