1. Cov Khoom Siv Science thiab Cov Khoom Zoo
1.1 Crystal Framework thiab Chemical Stability
(Aluminium Nitride Ceramic Substrates)
Aluminium nitride (AlN) yog ib tug dav bandgap semiconductor ceramic nrog hexagonal wurtzite siv lead ua qauv, tsim los ntawm rotating khaubncaws sab nraud povtseg ntawm lub teeb yuag aluminium thiab nitrogen atoms sib koom ua ke los ntawm cov khoom sib cuam tshuam covalent.
Qhov kev teeb tsa atomic ruaj khov no txhim kho AlN nrog kev ruaj ntseg zoo thermal, khaws architectural kev ncaj ncees mus txog 2200 ° C nyob rau hauv inert ambiences thiab resisting decomposition nyob rau hauv hnyav thermal caij tsheb kauj vab.
Tsis zoo li alumina (Al ob O TUG), AlN yog chemically inert rau thaw steels thiab ob peb teb gases, ua rau nws zoo tagnrho rau cov huab cua hnyav xws li cov khoom siv hluav taws xob semiconductor thiab cov cua kub kub.
Nws muaj zog tiv thaiv oxidation– tsim kom muaj kev nyab xeeb me ntsis Al ₂ O plaub txheej ntawm thaj chaw saum npoo thaum raug huab cua ncaj qha– lav qhov kev cia siab ntev ntev yam tsis muaj kev cuam tshuam loj ntawm cov tsev loj.
Tsis tas li ntawd, AlN qhia zoo heev hluav taws xob rwb thaiv tsev nrog ib tug resistivity tshaj 10 ¹⁴ Ω · cm thiab dielectric toughness saum toj no 30 kV / hli, tseem ceeb heev rau kev siv high-voltage.
1.2 Thermal conductivity thiab hluav taws xob nta
Ib qho tshwj xeeb tshaj plaws ntawm aluminium nitride yog nws cov thermal conductivity zoo dua, feem ntau txawv ntawm 140 rau 180 W/(m · K )rau kev lag luam-qib substratums– dhau 5 lub sij hawm siab dua li ntawm alumina (≈ 30 W/(m · K)).
Qhov kev ua tau zoo no yog los ntawm qhov tsawg atomic loj ntawm nitrogen thiab txhuas, kev koom ua ke nrog kev sib raug zoo thiab cov teeb meem marginal, uas tso cai rau phonon thauj mus los ntawm latticework.
Txawm li cas los xij, oxygen impurities tshwj xeeb yog kev puas tsuaj; kuj taug qab kom muaj nuj nqis (saum toj no 100 ppm ua) hloov rau cov chaw nitrogen, ua lub teeb yuag aluminium qhib thiab nthuav phonons, yog li ntawd ua rau txo cov thermal conductivity.
High-purity AlN hmoov synthesized ntawm carbothermal txo los yog ncaj qha nitridation yog tsim nyog kom ua tau zoo tagnrho warmth dissipation.
Txawm hais tias yog ib qho hluav taws xob insulator, AlN's piezoelectric thiab pyroelectric zog ua rau nws muaj txiaj ntsig zoo hauv cov ntsuas ntsuas thiab cov cuab yeej acoustic yoj, thaum nws broad bandgap (~ 6.2 eV) txhawb nqa cov txheej txheem hauv high-power thiab high-frequency electronic systems.
2. Cov txheej txheem tsim kho thiab kev tsim khoom nyuaj
( Aluminium Nitride Ceramic Substrates)
2.1 Powder Synthesis thiab Sintering Techniques
Ua kom muaj kev ua tau zoo AlN substratums pib nrog cov synthesis ntawm ultra-nplua, high-purity hmoov, Feem ntau ua tiav los ntawm cov tshuaj tiv thaiv xws li Al ₂ O SIX + 3C + N OB → 2AlN + 3CO (carbothermal txo) los yog ncaj nitridation ntawm lub teeb yuag aluminium hlau: 2Al + N OB → 2AlN.
Lub resulting hmoov yuav tsum tau ua tib zoo grated thiab doped nrog sintering pab zoo li Y TWO O FIVE, CaO, los yog tsawg ntiaj chaw oxides los txhawb densification ntawm kub nyob rau hauv nruab nrab 1700 ° C thiab 1900 ° C nyob rau hauv huab cua nitrogen.
Cov khoom xyaw no tsim cov kua dej luv luv uas txhim kho cov ciam teb diffusion, ua kom tiav densification (> 99% theoretical thickness) thaum txo cov pa paug.
Tom qab sintering annealing nyob rau hauv ib puag ncig uas muaj cov pa roj carbon ntau tuaj yeem txo qis cov ntsiab lus oxygen hauv lub vev xaib los ntawm kev tshem tawm ntawm intergranular oxides, thiaj li rov qab ncov thermal conductivity.
Ua kom zoo ib yam microstructure nrog tswj grain dimension yog qhov tseem ceeb rau kev sib npaug ntawm cov neeg kho tshuab toughness, thermal efficiency, thiab manufacturability.
2.2 Substratum Forming thiab Metallization
Thaum sintered, AlN ceramics yog qhov tseeb-hauv av thiab txaws kom tau raws li qhov kev cia siab ntawm qhov yuav tsum tau muaj rau cov khoom ntim khoom siv hluav taws xob., nquag mus rau micrometer-theem monotony.
Los ntawm qhov tho txawv, laser txiav, thiab tus qauv nto ua rau nws ua tau rau assimilation rau hauv multilayer kev npaj thiab crossbreed circuits.
Ib kauj ruam tseem ceeb hauv kev tsim cov substrate yog metallization– kev siv cov txheej txheem conductive (feem ntau tungsten, molybdenum, los yog tooj liab) los ntawm cov txheej txheem xws li tuab-film luam ntawv, nyias zaj duab xis sputtering, los yog kev sib txuas ncaj qha ntawm tooj liab (DBC).
Rau DBC, tooj liab aluminium foils raug khi rau AlN qhov chaw ntawm qhov kub thiab txias nyob rau hauv ib puag ncig tswj, tsim kom muaj tus neeg siv interface zoo tagnrho rau cov ntawv thov tam sim no.
Cov txheej txheem sib txawv xws li active steel brazing (Nrog) siv cov titanium-muaj cov solders los txhawb adhesion thiab thermal exhaustion kuj, tshwj xeeb tshaj yog nyob rau hauv rov qab fais fab cycling.
Kev tsim kho interfacial ua rau qee qhov txo qis thermal tsis kam thiab siab txhua yam kev cia siab rau hauv cov khoom siv ua haujlwm.
3. Performance Advantages nyob rau hauv Electronic Equipment
3.1 Thermal Administration hauv Power Electronics
AlN substratums tswv tuav cov cua sov tsim los ntawm cov cuab yeej siv hluav taws xob siab xws li IGBTs, MOSFETs, thiab RF amplifiers siv nyob rau hauv hluav taws xob tsheb, renewable resource inverters, thiab telecoms moj khaum.
Txhim khu kev tshem tawm cov cua sov kom tsis txhob muaj cov hotspots hauv zos, minimizes thermal kev ntxhov siab, thiab txuas ntxiv lub neej ntawm cov cuab yeej los ntawm kev txo cov electromigration thiab delamination hem.
Piv rau cov pa Al ₂ O ₃ substrates, AlN ua rau nws ua tau rau cov pob me me thiab lub zog siab dua vim nws cov nqi thermal conductivity, tso cai rau cov neeg tsim khoom los nias qhov kev ua haujlwm ciam teb yam tsis muaj kev cuam tshuam kev ncaj ncees.
Hauv LED teeb pom kev zoo thiab laser diodes, qhov twg qhov kub ntawm qhov sib txuas ncaj qha cuam tshuam rau kev ua tau zoo thiab ntxoov ntxoo stability, AlN substratums txhim kho luminescent tshwm sim thiab ua haujlwm lub neej expectancy.
Nws coefficient ntawm thermal loj hlob (CTE yog ib qho tseem ceeb tshaj plaws nyob rau hauv kev ua lag luam 4.5 ppm/K) Tsis tas li ntawd zoo sib xws ntawm silicon (3.5– 4 ppm/K) thiab gallium nitride (GaN, ~ 5.6 ppm/K), txo cov thermo-mechanical nro thaum caij tsheb kauj vab thermal.
3.2 Hluav taws xob thiab Mechanical Reliability
Yav dhau los thermal kev ua tau zoo, AlN siv tsawg dielectric poob (tsi d < 0.0005) and steady permittivity (εᵣ ≈ 8.9) throughout a broad regularity variety, making it perfect for high-frequency microwave and millimeter-wave circuits.
Nws hermetic xwm tiv thaiv dampness ingress, tshem tawm cov kev pheej hmoo deterioration nyob rau hauv qhov chaw ntub dej– ib qho tseem ceeb txiaj ntsig tshaj cov organic substrate.
Mechanically, AlN muaj siab flexural toughness (300– 400 MPa) thiab solidity (HV yog qhov zoo tshaj plaws rau cov neeg siv khoom 1200), ua kom cov resilience thaum tuav, kev sib dhos, thiab cov txheej txheem teb.
Cov yam ntxwv no sib sau ua ke rau kev txhim kho kev ncaj ncees, txo qis qhov ua tsis tiav, thiab txo tus nqi tag nrho ntawm kev muaj nyob rau hauv daim ntawv thov lub hom phiaj tseem ceeb.
4. Daim ntawv thov thiab yav tom ntej Technological Frontiers
4.1 Kev lag luam, Automotive, thiab kev tiv thaiv Systems
AlN ceramic substrates yog tam sim no cov pa nyob rau hauv advanced power modules rau kev lag luam tsav tsav, cua thiab hnub ci inverters, thiab onboard roj teeb chargers nyob rau hauv hluav taws xob thiab hybrid tsheb.
Hauv aerospace thiab kev tiv thaiv, Lawv txhawb nqa radar systems, digital war devices, thiab satellite kev sib txuas lus, qhov twg kev ua tau zoo nyob rau hauv cov teeb meem loj yog tsis-negotiable.
Clinical imaging khoom, muaj xws li X-ray generators thiab MRI systems, kuj tau txais los ntawm AlN cov hluav taws xob tiv thaiv thiab teeb liab kev ncaj ncees.
Raws li electrification fads nrawm thoob plaws hauv kev thauj mus los thiab lub zog, Kev thov rau AlN substrates tseem loj hlob, tau tsav los ntawm kev xav tau ntawm compact, muaj txiaj ntsig, thiab cov khoom siv hluav taws xob muaj npe nrov.
4.2 Arising Combination thiab Lasting Development
Kev tsim kho tshiab yav tom ntej tsom mus rau kev sib koom ua ke AlN txoj cai rau hauv cov khoom ntim khoom peb sab, ingrained passive ntsiab, thiab heterogeneous ua ke systems integrating Si, SiC, thiab Gadgets.
Kev tshawb fawb rau hauv nanostructured AlN tsos thiab ib-crystal substratums aims kom ntxiv thermal conductivity rau kev kawm txwv (> 300 W/(m · K)) rau tiam tom ntej quantum thiab optoelectronic gadgets.
Kev siv zog los txo cov nqi tsim khoom los ntawm kev siv cov hmoov sib xyaw ua ke, additive manufacturing ntawm intricate ceramic moj khaum, thiab kev rov ua dua ntawm cov khoom seem AlN tau txais lub zog los txhawb kev ruaj khov.
Tsis tas li ntawd, cov qauv tsim cov cuab yeej siv kev txheeb xyuas qhov tseeb (FEA) thiab kev txawj ntse txawj ntse yog siv los txhim kho substrate layout rau tej yam thermal thiab hluav taws xob loads.
Hauv kev xaus, Lub teeb yuag aluminium nitride ceramic substrates sawv cev rau lub hauv paus kev tsim kho tshiab hauv cov khoom siv hluav taws xob niaj hnub, distinctly txuas cov void ntawm hluav taws xob rwb thaiv tsev thiab zoo heev thermal kis tau tus mob.
Lawv lub luag haujlwm hauv kev tso cai rau kev ua haujlwm siab, Lub tshuab hluav taws xob muaj kev ntseeg siab qhia txog lawv cov txiaj ntsig zoo hauv kev rov ua dua tshiab ntawm digital thiab lub zog tsim kho tshiab.
5. Tus neeg muab khoom
Advanced Ceramics nrhiav tau rau lub Kaum Hlis 17, 2012, yog lub tuam txhab high-tech cog lus rau kev tshawb fawb thiab kev tsim kho, ntau lawm, ua, kev muag khoom thiab kev pabcuam ntawm cov khoom siv ceramic txheeb ze thiab cov khoom lag luam. Peb cov khoom suav nrog tab sis tsis txwv rau Boron Carbide Ceramic Cov Khoom, Boron Nitride Ceramic Khoom, Silicon Carbide Ceramic Khoom, Silicon Nitride Ceramic Khoom, Zirconium Dioxide Ceramic Khoom, lwm. Yog koj txaus siab, thov koj xav tiv tauj peb.
Cim npe: Aluminium Nitride Ceramic Substrates, aluminium nitride ceramic, txhuas nitride
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