1. Isayensi Yomkhiqizo kanye Nezakhiwo
1.1 I-Crystal Framework kanye Nokuqina Kwamakhemikhali
(I-Aluminium Nitride Ceramic Substrates)
I-Aluminium nitride (I-AlN) iyi-bandgap ebanzi ye-semiconductor ceramic ene-hexagonal wurtzite crystal structure, yakhiwe izendlalelo ezijikelezayo ze-aluminiyamu enesisindo esikhanyayo nama-athomu e-nitrogen ahlanganiswe ngokusebenzisana okuqinile.
Lokhu kusetha okuqinile kwe-athomu kuthuthukisa i-AlN ngokuvikeleka okushisayo okumangalisayo, ukugcina ubuqotho bezakhiwo kuze kube 2200 ° C kuma-ambience angasebenzi kanye nokumelana nokubola ngaphansi kokuhamba ngebhayisikili okushisayo.
Ngokungafani ne-alumina (Kubili O THATHU), I-AlN ayisebenzi ngamakhemikhali ukuze incibilikise izinsimbi namagesi amaningana asabelayo, okwenza kube ekahle emkhathini onzima njengamagumbi okucubungula ama-semiconductor kanye nama-heaters asezingeni eliphezulu.
Ukumelana kwayo okuphezulu ne-oxidation– ukwakha ukuphepha okuncane nje kwe-Al ₂ O ungqimba olune endaweni engaphezulu lapho uchayeka emoyeni– iqinisekisa ukwethembeka okuhlala njalo ngaphandle kokucekelwa phansi okukhulu kwezindlu eziningi.
Ngaphezu kwalokho, I-AlN ibonisa ukufakwa kukagesi okuhle kakhulu okunokumelana okudlulayo 10 ¹⁴ Ω · cm kanye nokuqina kwe-dielectric ngenhla 30 kV/mm, kubalulekile ezinhlelweni zokusebenza zamandla kagesi aphezulu.
1.2 I-Thermal Conductivity kanye nezici ze-Electronic
Esinye sezici ezicacisa kakhulu ze-aluminium nitride ukuthi i-thermal conductivity yayo ephakeme kakhulu, ngokuvamile ziyehluka 140 ku 180 W/(m · k )ama-substratum asezingeni lokuhweba– phezu 5 izikhathi eziphakeme kune-alumina (≈ 30 W/(m · k)).
Lokhu kusebenza kahle kubangelwa isisindo se-athomu esincane se-nitrogen ne-aluminium, kuhlanganiswe nezinkinga eziqinile zokuhlanganisa kanye ne-marginal factor, okuvumela ukuthuthwa kwephonon ngendlela efanele nge-latticework.
Noma kunjalo, ukungcola komoyampilo kulimaza kakhulu; futhi landelela amanani (ngenhla 100 ppm) ukushintshwa kwezindawo ze-nitrogen, ukukhiqiza ukuvuleka kwe-aluminium enesisindo esincane kanye nokusabalalisa amaphononi, ngaleyo ndlela kunciphisa ngokuphawulekayo conductivity ezishisayo.
Izimpushana ezihlanzekile ze-AlN ezihlanganiswe ngokuncipha kwe-carbothermal noma i-nitridation eqondile ziyadingeka ukuze kuzuzwe ukufudumala okufanelekile..
Kungakhathaliseki ukuthi i-insulator kagesi, Izakhiwo ze-AlN ze-piezoelectric kanye ne-pyroelectric zikwenza kube nenzuzo kumayunithi okuzwa namathuluzi we-acoustic wave, ngenkathi i-bandgap yayo ebanzi (~ 6.2 eV) isekela inqubo kumasistimu kagesi anamandla amakhulu kanye namaza aphezulu.
2. Izinqubo Zokwakha Nobunzima Bokukhiqiza
( I-Aluminium Nitride Ceramic Substrates)
2.1 I-Powder Synthesis kanye nama-Sintering Techniques
Ukukhiqiza ama-substratum e-AlN asebenza kahle kakhulu kuqala ngokuhlanganiswa kwe-ultra-fine, izinga okusezingeni eliphezulu powder, ngokuvamile kufezwa ngokusabela okufana ne-Al ₂ O SIX + 3C + N OKUBILI → 2AlN + 3CO (ukunciphisa i-carbothermal) noma i-nitridation eqondile yensimbi ye-aluminium enesisindo esincane: 2Al + N OKUBILI → 2AlN.
Impushana ewumphumela kufanele igaywe ngokucophelela futhi ifakwe ngosizo lwe-sintering njengo-Y TWO O FIVE, I-CaO, noma ama-oxide eplanethi angavamile ukukhuthaza ukuminyana emazingeni okushisa phakathi 1700 ° C futhi 1900 ° C ngaphansi komkhathi we-nitrogen.
Lezi zithako zakha izigaba zoketshezi zesikhashana ezithuthukisa ukusakazeka komngcele wokusanhlamvu, ukunika amandla ukuminyana okuphelele (> 99% ukushuba kwethiyori) ngenkathi kunciphisa ukungcoliswa komoya-mpilo.
I-post-sintering annealing ezindaweni ezinothe ngekhabhoni kunganciphisa kangcono okuqukethwe kwewebhu komoyampilo ngokususa ama-intergranular oxides., ngenxa yalokho ithola izinga eliphezulu le-thermal conductivity.
Ukuthola i-microstructure engaguquki enobukhulu bokusanhlamvu obulawulwayo kubalulekile ukulinganisa ukuqina komshini, ukusebenza kahle kokushisa, kanye nokwenza.
2.2 Ukwakhiwa kwe-substratum kanye ne-Metallization
Lapho sintered, I-AlN Ceramics iphansi ngokunemba futhi ifafazwe ukuze ihlangabezane nokubekezelela okulinganiselwe okudingekayo ekufakweni komkhiqizo we-elekthronikhi., ngokuvamile kuya ku-micrometer-level monotony.
Nge-hole boring, ukusika laser, kanye nephethini yangaphezulu yenza kube nokwenzeka ukufana kuzinhlelo zezendlalelo eziningi kanye namasekethe ahlukene.
Isinyathelo esibalulekile ekwenzeni i-substrate i-metallization– ukusetshenziswa kwezingqimba conductive (ngokuvamile i-tungsten, i-molybdenum, kumbe ithusi) ngokusebenzisa izinqubo ezifana nokunyathelisa amafilimu aminyene, ukuphalaza kwefilimu encane, noma isibopho esiqondile sethusi (I-DBC).
Okwe-DBC, amatshe e-aluminium yethusi aboshelwe ezindaweni ze-AlN emazingeni okushisa aphakeme endaweni elawulwayo, ukudala isixhumi esibonakalayo esiqinile somsebenzisi esilungele izinhlelo zokusebenza zamanje.
Amasu ahlukene afana nokufaka insimbi okusebenzayo (NGE) sebenzisa ama-solder aqukethe i-titanium ukuqinisa ukunamathela kanye nokumelana nokukhathala okushisayo, particularly under repeated power cycling.
Correct interfacial design makes certain reduced thermal resistance and high mechanical dependability in operating devices.
3. Performance Advantages in Electronic Equipment
3.1 Thermal Administration in Power Electronics
AlN substratums master handling heat created by high-power semiconductor tools such as IGBTs, Ama-MOSFET, and RF amplifiers used in electrical automobiles, iziguquli zezinsiza ezivuselelekayo, and telecoms framework.
Reliable heat extraction avoids local hotspots, minimizes thermal anxiety, and extends tool lifetime by alleviating electromigration and delamination threats.
Compared to conventional Al ₂ O ₃ substrates, AlN makes it possible for smaller bundle sizes and higher power thickness due to its premium thermal conductivity, permitting developers to press performance boundaries without compromising integrity.
Ekukhanyeni kwe-LED nama-laser diode, lapho izinga lokushisa le-junction lithonya ngokuqondile ukusebenza kanye nokuzinza komthunzi, Ama-substratum e-AlN athuthukisa kakhulu umphumela we-luminescent kanye nesikhathi sokuphila esisebenzayo.
I-coefficient yayo yokukhula okushisayo (I-CTE ≈ 4.5 ppm/K) ngaphezu kwalokho ifana kakhulu ne-silicon (3.5– 4 ppm/K) kanye ne-gallium nitride (I-GaN, ~ 5.6 ppm/K), ukunciphisa ukungezwani kwe-thermo-mechanical ngesikhathi sokuhamba ngebhayisikili okushisayo.
3.2 Ukwethenjelwa Kogesi Nemishini
Ukusebenza okushisayo okudlule, I-AlN isebenzisa ukulahleka kwe-dielectric ephansi (ithini δ < 0.0005) and steady permittivity (εᵣ ≈ 8.9) throughout a broad regularity variety, making it perfect for high-frequency microwave and millimeter-wave circuits.
Imvelo yayo ye-hermetic ivikela ekungeneni kokuswakama, ukususa izingozi zokuwohloka ezindaweni ezinomswakama– inzuzo ebalulekile ngaphezu kwama-organic substrates.
Ngomshini, I-AlN inokuqina okuphezulu kwe-flexural (300– 400 I-MPa) kanye nokuqina (I-HV ≈ 1200), ukuqinisekisa ukuqina ngesikhathi sokuphatha, umhlangano, kanye nenqubo yasensimini.
Lezi zici zihlangene zifaka isandla ekuthuthukisweni kobuqotho besistimu, amazinga okuhluleka ehlisiwe, kanye nezindleko eziphansi eziphelele zokuba nezinhlelo zokusebenza ezibalulekile zenjongo.
4. Izicelo kanye Nekusasa Technological Frontiers
4.1 Izimboni, Ezezimoto, kanye Nezinhlelo Zokuvikela
Ama-substrates e-AlN ceramic okwamanje ajwayelekile kumamojula wamandla athuthukile kumadrayivu ezimoto ezentengiselwano, umoya kanye ne-solar inverters, kanye namashaja amabhethri angaphakathi ezimotweni zikagesi neziyingxubevange.
Emkhathini nasekuvikeleni, basekela izinhlelo ze-radar, imishini yempi yedijithali, kanye nokusebenzisana kwesathelayithi, lapho ukusebenza ngaphansi kwezinkinga ezinkulu kungaxoxiswana khona.
Imishini yokuthwebula emitholampilo, ehlanganisa amajeneretha e-X-ray kanye nezinhlelo ze-MRI, futhi zuza ekumelaneni nemisebe ye-AlN nobuqotho besignali.
Njengoba izimfashini zokufaka ugesi ziyashesha kuzo zonke izinkambu zokuthutha nezamandla, isidingo sama-substrates e-AlN siyaqhubeka nokukhula, eqhutshwa isidingo sokubumbana, ngempumelelo, kanye nemishini kagesi enamandla anedumela elihle.
4.2 Inhlanganisela Ekhulayo kanye Nentuthuko Ehlala njalo
Izinto ezintsha ezizayo zigxile ekuhlanganiseni i-AlN ngqo kuzakhiwo zokupakisha zemikhiqizo enezinhlangothi ezintathu, izakhi zokwenziwa ezigxilile, kanye nezinhlelo zokuhlanganisa ezihlukene ezihlanganisa i-Si, I-SiC, kanye namagajethi e-GaN.
Ucwaningo lwamamuvi e-AlN ane-nanostructured kanye ne-single-crystal substratums luhlose ukukhulisa ukusebenza kahle okushisayo maqondana nemikhawulo yezifundo. (> 300 W/(m · k)) kumagajethi esizukulwane esilandelayo se-quantum kanye ne-optoelectronic.
Imizamo yokunciphisa izindleko zokukhiqiza ngokusebenzisa ukwakheka kwempushana ebukhali, ukukhiqizwa okungeziwe kwezinhlaka ze-ceramic eziyinkimbinkimbi, kanye nokugaywa kabusha kwezinsalela ze-AlN kuthola umfutho wokuthuthukisa ukusimama.
Ngaphezu kwalokho, amadivaysi okumodela asebenzisa ukuhlaziywa kwezinto ezinomkhawulo (I-FEA) kanye nobuhlakani bokwenziwa kusetshenziswa ukuthuthukisa ukwakheka kwe-substrate kwemithwalo ethile eshisayo nekagesi.
Ekuphetheni, Isisindo esincane se-aluminium nitride ceramic substrates simele ukuqanjwa kabusha kwetshe legumbi kumishini kagesi yesimanje, ngokugqamile ukuxhuma igebe phakathi kokufakwa kukagesi kanye nokudluliswa kwe-thermal okuvelele.
Indima yabo ekuvumeleni ukusebenza kahle okuphezulu, amasistimu wamandla athembeke kakhulu agcizelela ukubaluleka kwawo kobuqili ekuziphendukeleni kwemvelo okuphindaphindayo kokuqanjwa kwedijithali namandla.
5. Umphakeli
I-Advanced Ceramics yasungulwa ngo-Okthoba 17, 2012, yibhizinisi lobuchwepheshe obuphezulu elizinikele ocwaningweni nasekuthuthukisweni, ukukhiqiza, ukucubungula, ukuthengisa kanye nezinsizakalo zobuchwepheshe zezinto eziphathelene ne-ceramic nemikhiqizo. Imikhiqizo yethu ihlanganisa kodwa ingagcini nje nge-Boron Carbide Ceramic Products, I-Boron Nitride Ceramic Products, Imikhiqizo ye-Silicon Carbide Ceramic, Imikhiqizo ye-Silicon Nitride Ceramic, I-Zirconium Dioxide Ceramic Products, njll. Uma unentshisekelo, sicela ukhululeke ukuxhumana nathi.
Omaka: I-Aluminium Nitride Ceramic Substrates, i-aluminium nitride ceramic, i-aln aluminium nitride
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