1. INzululwazi yeMveliso kunye neePropati zoLwakhiwo
1.1 Isakhelo seCrystal kunye nokuzinza kweMichiza
(IAluminiyam yeNitride yeCeramic Substrates)
I-Aluminiyam nitride (AlN) yi-bandgap ebanzi semiconductor ceramic ene-hexagonal wurtzite crystal structure, yenziwe ngamaleko ajikelezayo obunzima bokukhanya kwealuminiyam kunye neeathom zenitrogen ezidityaniswe ngonxibelelwano oluqinileyo..
Olu seto lomelele lweathom yongeza i-AlN ngokhuseleko olumangalisayo lobushushu, ukugcina imfezeko yoyilo ukuya kuthi ga 2200 ° C kwi-ambiences engasebenziyo kunye nokumelana nokubola phantsi kwebhayisekile eshushu eshushu.
Ngokungafaniyo ne-alumina (Zonke zimbini OZINTATHU), I-AlN yikhemikhali inert yokunyibilikisa iintsimbi kunye neegesi ezininzi eziphendulayo, iyenza ilungele iatmospheres eziqatha ezifana namagumbi okulungisa isemiconductor kunye nezifudumezi ezinobushushu obuphezulu.
Ukumelana kwayo okuphezulu ne-oxidation– ukuphuhlisa nje ukhuseleko oluncinci Al ₂ O umaleko omine kwindawo yomphezulu ekuvezweni okuthe ngqo emoyeni– iqinisekisa ukuthembeka okungapheliyo ngaphandle kokuthotywa okubalulekileyo kwamakhaya amaninzi.
Ngaphaya koko, I-AlN ibonisa ukugquma kombane okugqwesileyo kunye ne-resistivity egqithileyo 10 ¹⁴ Ω · cm kunye nokuqina kwedielectric ngaphezulu 30 kV/mm, ibalulekile kwizicelo zombane ophezulu.
1.2 I-Thermal Conductivity kunye ne-Electronic Features
Enye yezona zinto zikhankanyiweyo ze-aluminiyam nitride kukuqhuba kwayo okuphezulu kwe-thermal, ngokuqhelekileyo yahluka ukusuka 140 ukuya 180 W/(m · K )kwimigangatho yorhwebo– ngaphaya 5 amaxesha aphezulu kunealumina (≈ 30 W/(m · K)).
Oku kusebenza kakuhle kuvela kubunzima beathom obuphantsi benitrogen kunye ne-aluminiyam, idityaniswe nebhondi eyomeleleyo kunye neengxaki ze-marginal factor, evumela uthutho lwephonon olusebenzayo ngokusebenzisa i-latticework.
Nangona kunjalo, Ukungcola kweoksijini kuyingozi kakhulu; kwakhona ukulandelela imiyinge (ngaphezulu 100 ppm) ukutshintshwa kweziza zenitrogen, ukuvelisa ukukhanya kwe-aluminiyam yokuvuleka kunye nokusabalalisa iiphononi, ngaloo ndlela kunciphisa kakhulu ukuhanjiswa kwe-thermal.
Ukucoceka okuphezulu kwe-AlN powders eyenziwe ngokuncipha kwe-carbothermal okanye i-nitridation ngokuthe ngqo iyimfuneko ukufezekisa ukuchithwa kobushushu obufanelekileyo..
Kungakhathaliseki ukuba yi-insulator yombane, Ipropathi ye-AlN ye-piezoelectric kunye ne-pyroelectric iyenza ibe luncedo kwiiyunithi zokuva kunye nezixhobo zamaza acoustic, ngelixa i-bandgap yayo ebanzi (~ 6.2 eV) igcina inkqubo kumandla aphezulu kunye neesistim ze-elektroniki ezisebenza rhoqo.
2. Iinkqubo zokwakha kunye nobunzima beMveliso
( IAluminiyam yeNitride yeCeramic Substrates)
2.1 I-Powder Synthesis kunye ne-Sintering Techniques
Ukuvelisa i-AlN substratums ephezulu yokusebenza iqala nge-synthesis ye-ultra-fine, umgubo ococekileyo, iphunyezwe ngokubanzi ngeempendulo ezifana ne-Al ₂ O SIX + 3C + N EZIMBINI → 2AlN + 3CO (ukunciphisa i-carbothermal) okanye i-nitridation echanekileyo yobunzima bentsimbi ye-aluminium: 2Al + N EZIMBINI → 2AlN.
I-powder ephumelayo kufuneka ihlanjululwe ngononophelo kwaye ifakwe ngoncedo lwe-sintering njenge-Y TWO O FIVE, CaO, okanye iioksidi zeplanethi ezinqabileyo zokukhuthaza ukuxinana kumaqondo obushushu phakathi 1700 ° C kunye 1900 ° C phantsi kwe-nitrogen emoyeni.
Ezi zithako zidala izigaba zolwelo zexeshana elifutshane ezomeleza ukusasazwa komda wokuziinkozo, ukwenza uxinaniso olupheleleyo (> 99% Ubukhulu bethiyori) ngelixa kunciphisa ungcoliseko lweoksijini.
I-post-sintering annealing kwindawo ene-carbon-rich inokunciphisa ngcono umxholo we-oxygen web ngokususa i-intergranular oxides., ngenxa yoko ukubuyisela incopho ye-thermal conductivity.
Ukufumana i-microstructure engaguqukiyo kunye nemilinganiselo elawulwayo yeenkozo kubalulekile ukulungelelanisa ukuqina koomatshini, ukusebenza kakuhle kwe-thermal, kunye nokwenza.
2.2 Ukuqulunqwa kwe-Substratum kunye ne-Metallization
Xa sintered, Iiseramikhi ze-AlN zichanekile-zisemhlabeni kwaye zifafaziwe ukuhlangabezana nonyamezelo olulinganiselweyo olufunekayo ekupakishweni kwemveliso ye-elektroniki., rhoqo ukuya kwi-micrometer-level monotony.
Ngomngxuma uyadika, ukusika laser, kunye nepateni yomphezulu yenza kube nokwenzeka ukulungelelaniswa kwiiplani ze-multilayer kunye neesekethe ezinqamlezileyo.
Inyathelo elibalulekileyo ekwenzeni i-substrate yi-metallization– ukusetyenziswa kweeleya conductive (ngokuqhelekileyo i-tungsten, molybdenum, okanye ubhedu) ngokusebenzisa iinkqubo ezifana noshicilelo lwefilimi eninzi, ukutshiza kwefilimu, okanye ukudityaniswa ngokuthe ngqo kobhedu (DBC).
YeDBC, iifoyile ze-aluminiyam yobhedu zibotshelelwa kumphezulu we-AlN kumanqanaba obushushu aphakanyisiweyo kwindawo elawulwayo, ukwenza ujongano lomsebenzisi olomeleleyo olulungele usetyenziso lwangoku oluphezulu.
Ubuchwephesha obahlukeneyo njengentsimbi esebenzayo yokuqhola (KUNYE) sebenzisa ii-solder ezine-titanium ukomeleza ukunamathela kunye nokumelana nokudinwa kwe-thermal, ngakumbi phantsi kwebhayisekile yamandla ephindaphindiweyo.
Uyilo oluchanekileyo lokudibanisa ubuso lwenza ukunciphisa ukuchasana kwe-thermal kunye nokuxhomekeka okuphezulu koomatshini kwizixhobo zokusebenza.
3. IiNzuzo zokuSebenza kwiZixhobo zoMbane
3.1 Ulawulo lwe-Thermal kwi-Electronics yaMandla
I-AlN substratums yokuphatha ubushushu obuphezulu obudalwe zizixhobo eziphezulu ze-semiconductor ezifana nee-IGBTs, Ii-MOSFETs, kunye nezandisi zeRF ezisetyenziswa kwiimoto zombane, iziguquli zemithombo ehlaziyekayo, kunye nesakhelo se-telecoms.
Ukutsalwa kobushushu obuthembekileyo kuthintela iindawo ezitshisa kakhulu zendawo, kunciphisa ukuxhalaba kwe-thermal, kwaye yandisa ubomi besixhobo ngokunciphisa ukufuduka kwe-electromigration kunye nezisongelo ze-delamination.
Xa kuthelekiswa neenxalenye eziqhelekileyo ze-Al ₂ O ₃, I-AlN yenza ukuba kwenzeke ubungakanani obuncinci bemiqulu kunye nobukhulu obuphezulu bamandla ngenxa yeprimiyamu yayo ye-thermal conductivity, ukuvumela abaphuhlisi bacinezele imida yokusebenza ngaphandle kokuthomalalisa ingqibelelo.
Kwizibane ze-LED kunye ne-laser diode, apho ubushushu be-junction buchaphazela ngokuthe ngqo ukusebenza kunye nokuzinza komthunzi, Ii-substratum ze-AlN ziphucula kakhulu iziphumo ze-luminescent kunye nexesha elilindelekileyo lokuphila.
I-coefficient yayo yokukhula kwe-thermal (I-CTE ≈ 4.5 ppm/K) ngokusondeleyo ihambelana ne-silicon (3.5– 4 ppm/K) kunye ne-gallium nitride (GaN, ~ 5.6 ppm/K), ukunciphisa uxinzelelo lwe-thermo-mechanical ngexesha lokuhamba ngebhayisekile eshushu.
3.2 Ukuthembeka koMbane kunye noomatshini
Ukusebenza kwe-thermal yangaphambili, I-AlN isebenzisa ilahleko ye-dielectric ephantsi (itani δ < 0.0005) and steady permittivity (εᵣ ≈ 8.9) throughout a broad regularity variety, making it perfect for high-frequency microwave and millimeter-wave circuits.
Ubume bayo be-hermetic bukhusela ekungeneni kokufuma, ukususa iingozi zokuwohloka kwiindawo ezifumileyo– inzuzo ebalulekileyo phezu kwe-organic substrates.
Ngoomatshini, I-AlN inobunzima obuphezulu be-flexural (300– 400 MPa) kunye nokuqina (HV ≈ 1200), ukuqinisekisa ukomelela ngexesha lonke lokuphatha, indibano, kunye nenkqubo yasendle.
Ezi mpawu ngokudibeneyo zinegalelo ekuphuculeni imfezeko yenkqubo, amazinga okusilela athotyiweyo, kunye nexabiso eliphantsi lilonke lokufumana kwizicelo ezibalulekileyo zobuthunywa.
4. Izicelo kunye nemida yeTekhnoloji yekamva
4.1 Imizi-mveliso, Iimoto, kunye neeNkqubo zoKhuselo
I-AlN ceramic substrates ziqhelekile ngoku kwiimodyuli zamandla aphambili kwiimoto zokuqhuba, umoya kunye ne-solar inverters, kunye neetshaja zebhetri ezingaphakathi kwiimoto zombane kunye nezixubeneyo.
Kwi-aerospace kunye nokukhusela, zigcina iinkqubo zeradar, izixhobo imfazwe yedijithali, kunye nonxibelelwano lwesathelayithi, apho ukusebenza phantsi kweengxaki ezinzima kungaxoxiswana.
Izixhobo zokujonga ikliniki, equka i-X-ray generator kunye ne-MRI systems, kwakhona ukuzuza kwi-AlN yokumelana nemitha kunye nokunyaniseka komqondiso.
Njengoko iifadi zokufakelwa kombane zikhawuleza kuzo zonke iindawo zothutho kunye namandla, imfuno AlN substrates iyaqhubeka ukukhula, iqhutywa yimfuneko yobumbano, esebenzayo, kunye nezixhobo zombane ezaziwayo-kakuhle.
4.2 Ukuvela kweNdibano kunye noPhuhliso oluZinzileyo
Ubuchule bexesha elizayo bugxininise ekudibaniseni i-AlN ngqo kwimveliso enemigangatho emithathu yokupakisha uyilo, izinto ezimiliselwe kukwenziwa, kunye neenkqubo zokudibanisa ezingafaniyo ezidibanisa iSi, SiC, kunye nezixhobo zeGaN.
Uphando kwimiboniso bhanyabhanya ye-AlN ene-nanostructured kunye ne-single-crystal substratums ijolise ekonyuseni ukuqhubela phambili kwe-thermal kwimida yemfundo. (> 300 W/(m · K)) kwisizukulwana esilandelayo quantum kunye nezixhobo ze-optoelectronic.
Iinzame zokunciphisa iindleko zokwenziwa komgubo owenziweyo, ukwenziwa okongeziweyo kwezakhelo ezintsonkothileyo zeceramic, kunye nokurisayikilishwa kwezinto ezilahliweyo ze-AlN zifumana amandla okunyusa uzinzo.
Ngaphaya koko, izixhobo zokubonisa kusetyenziswa uhlalutyo lwento elinganiselweyo (I-FEA) kunye nobukrelekrele bokwenziwa busetyenziswa ukomeleza uyilo lwesubstrate kumthwalo othile oshushu kunye nombane.
Ukuququmbela, Ubunzima obukhanyayo be-aluminiyam ye-nitride ye-ceramic substrates imele ilitye lembombo elitsha kwizinto zombane zangoku, ukudibanisa ngokucacileyo isithuba phakathi kokufakelwa kombane kunye nokuhanjiswa kwe-thermal okubalaseleyo.
Indima yabo ekuvumeleni ukusebenza kakuhle, Iinkqubo zamandla ezithembeke kakhulu zigxininisa ixabiso lazo lobuchule kwinguqu ephindaphindiweyo yedijithali kunye namandla amatsha..
5. Umthengisi
Advanced Ceramics yasekwa ngo-Oktobha 17, 2012, lishishini lobugcisa obuphezulu elizinikele kuphando nophuhliso, imveliso, ukuqhubekeka, ukuthengisa kunye neenkonzo zobugcisa bezixhobo ze-ceramic ezinxulumene neemveliso. Iimveliso zethu ziquka kodwa aziphelelanga kwiiMveliso zeCeramic zeBoron Carbide, IiMveliso zeCeramic zeBoron Nitride, Iimveliso zeCeramic zeSilicon Carbide, Iimveliso zeCeramic zeSilicon Nitride, IZirconium Dioxide yeeMveliso zeCeramic, njl. Ukuba unomdla, nceda uzive ukhululekile ukuqhagamshelana nathi.
Iithegi: IAluminiyam yeNitride yeCeramic Substrates, i-aluminium nitride ceramic, ialn aluminium nitride
Onke amanqaku kunye nemifanekiso avela kwi-Intanethi. Ukuba kukho nayiphi na imiba ye-copyright, nceda uqhagamshelane nathi ngexesha lokucima.
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