1. Chigadzirwa Sainzi uye Zvimiro Zvimiro
1.1 Crystal Framework uye Chemical Kugadzikana
(Aluminium Nitride Ceramic Substrates)
Aluminium nitride (AlN) ndeye yakakura bandgap semiconductor ceramic ine hexagonal wurtzite crystal chimiro, inoumbwa nezvikamu zvinotenderera zvehuremu hwealuminium uye maatomu enitrogen anosungirirwa kuburikidza nekubatana kwakasimba..
Uku kugadzika kweatomu setup inosimudzira AlN ine phenomenal thermal chengetedzo, kuchengetedza kuvimbika kwekuvaka kusvika 2200 ° C mune inert ambiences uye kuramba kuora pasi pekunyanya kupisa bhasikoro.
Kusiyana nealuminium (Zvose zviviri O ZVITATU), AlN ikemikari inert kunyungudutsa simbi uye akati wandei anopindura magasi, zvichiita kuti zvive zvakanaka kune dzakaoma mamiriro ekunze akadai semiconductor processing chambers uye high-temperature heaters.
Kunyanya kupikisa kune oxidation– Kugadzira chengetedzo yakatetepa Al ₂ O mana akaturikidzana panzvimbo yepamusoro pakatarisana nemhepo– inovimbisa kuvimbika kusingaperi pasina kuparara kwakanyanya kwedzimba dzakawanda.
Uyezve, AlN inoratidza yakanakisa simbi yemagetsi ine resistivity inodarika 10 ¹⁴ Ω · masendimita uye dielectric kuoma pamusoro 30 kV/mm, yakakosha kune yakakwira-voltage application.
1.2 Thermal Conductivity uye Electronic Features
Chimwe chezvinhu zvinonyanya kutsanangura aluminium nitride ndeyekupisa kwayo kwepamusoro conductivity, kazhinji zvakasiyana kubva 140 ku 180 W/(m · K )yekutengeserana-giredhi substratums– pamusoro 5 nguva dzakakwirira kudarika dzealumina (≈ 30 W/(m · K)).
Kushanda uku kunobva pakushomeka kweatomu yenitrogen nealuminium, yakabatanidzwa nekubatana kwakasimba uye marginal factor matambudziko, iyo inobvumira kufambisa kwakanaka kwephonon kuburikidza nelatticework.
Zvakadaro, kusvibiswa kweokisijeni kunonyanya kukuvadza; tsvagawo huwandu (pamusoro 100 ppm) kutsiva nzvimbo dze nitrogen, kuburitsa huremu huremu hwealuminium kuvhurwa uye kuparadzira phononi, nokudaro kuderedza zvakanyanya kupisa conductivity.
Yakakwira-kuchena kweAlN poda inogadzirwa kuburikidza necarbothermal kuderera kana kunangana nitridation inodiwa kuti uwane kwakaringana kudziya kupera..
Pasinei nekuve insulator yemagetsi, AlN's piezoelectric uye pyroelectric zvivakwa zvinoita kuti zvive zvinobatsira mukunzwa mauniti uye acoustic wave maturusi., nepo yakakura bandgap (~ 6.2 eV) inochengetedza maitiro mune yakakwirira-simba uye yakakwirira-frequency emagetsi masisitimu.
2. Maitirwo Ekuvaka uye Matambudziko Okugadzira
( Aluminium Nitride Ceramic Substrates)
2.1 Powder Synthesis uye Sintering Techniques
Kugadzira yepamusoro-inoshanda AlN substratums inotanga neiyo synthesis ye Ultra-yakanaka, high-purity powder, inowanzoitwa kuburikidza nekuita seAl ₂ O SIX + 3C + N TWO → 2AlN + 3CO (kuderedza carbothermal) kana kuti yakatwasuka nitridation yemwenje uremu aluminium simbi: 2Al + N TWO → 2AlN.
Hupfu hunobuda hunofanira kunyatsogezwa uye kunyudzwa nerubatsiro rwekupisa seY TWO O FIVE, CaO, kana maokisidhi epasi asingawanzo kusimudzira densification patembiricha iri pakati 1700 °C uye 1900 ° C pasi penitrogen atmosphere.
Izvi zvinongedzo zvinogadzira zvikamu zvenguva pfupi zvemvura izvo zvinowedzera kupararira kwemuganho wezviyo, kugonesa densification yakakwana (> 99% theoretical thickness) nepo ichideredza kusvibiswa kweokisijeni.
Post-sintering annealing munzvimbo dzakapfuma kabhoni inogona kuderedza zvirinani okisijeni pawebhu nekubvisa intergranular oxides., nokudaro kudzoreredza peak thermal conductivity.
Kuwana inowirirana microstructure ine inodzorwa zviyo dimension kwakakosha kuenzanisa kuoma kwemakanika, kupisa kwemafuta, uye manufacturability.
2.2 Substratum Kugadzira uye Metallization
Kana sintered, AlN Ceramics ndeyechokwadi-pasi uye yakapwanyika kuti isangane neyakaganhurirwa kushivirira kunodiwa pakurongedza chigadzirwa chemagetsi., kazhinji kune micrometer-level monotony.
Kuburikidza neburi rinofinha, laser cutting, uye peni yepamusoro inoita kuti zvikwanise kufananidzwa muzvirongwa zvema multilayer uye masekete akachinjika.
Nhanho yakakosha mukugadzira substrate ndeye metallization– kushandiswa kwema conductive layers (kazhinji tungsten, molybdenum, kana mhangura) kuburikidza nemaitiro akadai sekudhinda kwefirimu gobvu, firimu rakaonda-sputtering, kana kusungirirwa kwakananga kwemhangura (DBC).
ZveDBC, Copper aluminum foils inosungirirwa kune AlN nzvimbo pane yakasimudzwa tembiricha munzvimbo yakadzorwa, kugadzira yakasimba mushandisi interface yakanaka kune yakakwirira-ikozvino maapplication.
Nzira dzakasiyana-siyana dzakadai sekushanda kwesimbi (WITH) shandisa titanium-ine masoja kuti uwedzere kunamatira uye nekupisa kupera simba kuramba, kunyanya pasi pekudzokorora simba bhasikoro.
Yakarongeka interfacial dhizaini inoita kuti kumwe kuderedzwa kwemafuta kuramba uye kuvimbika kwakanyanya kwemuchina mumidziyo yekushandisa.
3. Performance Advantages mune Electronic Equipment
3.1 Thermal Administration muPower Electronics
AlN substratums tenzi inobata kupisa yakagadzirwa nepamusoro-simba semiconductor maturusi akadai seIGBTs, MOSFETs, uye RF amplifiers anoshandiswa mumotokari dzemagetsi, renewable resource inverters, uye telecoms framework.
Kupisa kwakavimbika kunodzivirira hotspots dzenzvimbo, kunoderedza kushushikana kwekupisa, uye inowedzera hupenyu hwechishandiso nekudzikisa electromigration uye delamination kutyisidzira.
Kuenzaniswa neyakajairwa Al ₂ O ₃ substrates, AlN inoita kuti zvikwanisike kune madiki masumbu saizi uye yakakwirira simba ukobvu nekuda kweiyo premium yekupisa conductivity, kubvumira vanogadzira kudzvanya miganhu yekushanda pasina kukanganisa kutendeseka.
Muchiedza che LED uye laser diodes, uko kupisa kwejunction kunokanganisa zvakananga kushanda uye kugadzikana kwemumvuri, AlN substratums inovandudza zvakanyanya luminescent mhedzisiro uye inoshanda tarisiro yehupenyu.
Coefficient yayo yekukura kwekupisa (CTE ≈ 4.5 ppm/K) zvakare inoenderana zvakanyanya neyesilicon (3.5– 4 ppm/K) uye gallium nitride (GaN, ~ 5.6 ppm/K), kuderera kwe thermo-mechanical tension panguva yekupisa bhasikoro.
3.2 Kuvimbika kweMagetsi uye Mechanical
Kare thermal performance, AlN inoshandisa yakaderera dielectric kurasikirwa (tani δ < 0.0005) and steady permittivity (εᵣ ≈ 8.9) throughout a broad regularity variety, making it perfect for high-frequency microwave and millimeter-wave circuits.
Yayo hermetic chimiro inodzivirira kubva pakunyorova ingress, kubvisa njodzi dzekuipa munzvimbo dzakanyorova– kubatsirwa kwakakosha pane organic substrates.
Mechanically, AlN ine yakakwira flexural kuoma (300– 400 MPa) uye kusimba (HV ≈ 1200), kuve nechokwadi kusimba mukati mekubata, ungano, uye nzira yemunda.
Aya maitiro pamwe chete anobatsira kuvandudza kutendeseka kwehurongwa, kuderedza kukundikana rates, uye yakaderera mutengo wakakwana wekuva nawo mumisheni-yakakosha maapplication.
4. Zvishandiso uye Remangwana Tekinoroji Frontiers
4.1 Industrial, Automotive, uye Dziviriro Systems
AlN ceramic substrates parizvino yakajairwa mumamodule emagetsi ekutengesa mota madhiraivha, mhepo uye solar inverters, uye mabhatiri ekuchaja mumotokari dzemagetsi uye dzakasanganiswa.
Mumuchadenga uye kudzivirira, vanochengetedza radar masisitimu, midziyo yehondo yedhijitari, uye kusawirirana kwesatellite, uko kuita pasi pematambudziko akanyanya hakugone kutaurirana.
Clinical imaging equipment, inosanganisira X-ray generator uye MRI systems, zvakare kuwana kubva kuAlN's radiation kuramba uye chiratidzo chekuvimbika.
Sezvo mafadhi emagetsi anomhanyisa munzvimbo dzese dzekutakura uye simba, kudiwa kweAlN substrates kuri kuramba kuchikura, inosundwa nekudiwa kwe compact, inoshanda, uye midziyo yemagetsi ine mukurumbira.
4.2 Inosimuka Musanganiswa uye Inogara Kubudirira
Zvitsva zveramangwana zvinotarisana nekubatanidza AlN muzvikamu zvitatu-dimensional chigadzirwa chekurongedza zvivakwa., inrained passive elements, uye heterogeneous musanganiswa masisitimu anobatanidza Si, SiC, uye GaN gadgets.
Tsvagiridzo mune nanostructured AlN mafirimu uye single-crystal substratums inovavarira kuwedzera kuwedzera kupisa conductivity kumiganhu yedzidzo. (> 300 W/(m · K)) yechizvarwa chinotevera quantum uye optoelectronic gadgets.
Kuedza kudzikisa mari yekugadzira kuburikidza ne scalable powder synthesis, kuwedzera kwekugadzira kweakaomesesa ceramic masisitimu, uye kudzokorodza kwezvakaraswa AlN kuri kuwedzera simba rekusimudzira kusimba.
Uyezve, modelling zvishandiso uchishandisa finite element analysis (FEA) uye hungwaru hwekugadzira huri kushandiswa kusimudzira substrate marongero kune mamwe magetsi anopisa uye magetsi.
Mukupedzisa, huremu huremu aluminium nitride ceramic substrates inomiririra ibwe rekona kuvandudzwa mune zvemazuva ano zvigadzirwa zvemagetsi, kubatanidza zvakajeka pakati pekuvharira kwemagetsi uye yakanakisa kutapurirana kwemafuta.
Basa ravo mukubvumira kushanda kwepamusoro, akavimbika-akavimbika masisitimu emagetsi anosimbisa kukosha kwavo kwehunyanzvi mukudzokororwa kweshanduko yedhijitari uye masimba masimba..
5. Supplier
Yepamberi Ceramics yakavambwa muna Gumiguru 17, 2012, ibhizimusi repamusoro-soro rakazvipira mukutsvagisa nekusimudzira, production, processing, kutengesa uye hunyanzvi masevhisi eceramic hama zvinhu uye zvigadzirwa. Zvigadzirwa zvedu zvinosanganisira asi zvisingagumire kuBoron Carbide Ceramic Zvigadzirwa, Boron Nitride Ceramic Zvigadzirwa, Silicon Carbide Ceramic Zvigadzirwa, Silicon Nitride Ceramic Zvigadzirwa, Zirconium Dioxide Ceramic Zvigadzirwa, etc. Kana uchifarira, ndapota inzwa wakasununguka kutibata nesu.
Tags: Aluminium Nitride Ceramic Substrates, aluminium nitride ceramic, aln aluminium nitride
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