1. Crystallography and Material Basics of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Plates Seramîk)
Silicon carbide (SiC) is a covalent ceramic substance made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, identified by its exceptional polymorphism– ser 250 known polytypes– all sharing solid directional covalent bonds but varying in piling series of Si-C bilayers.
One of the most highly appropriate polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal kinds 4H-SiC and 6H-SiC, each displaying subtle variations in bandgap, electron mobility, and thermal conductivity that affect their suitability for details applications.
The toughness of the Si– C bond, with a bond energy of roughly 318 kJ/mol, underpins SiC’s remarkable solidity (Zehmetiya Mohs ya 9– 9.5), faktora helandinê ya bilind (~ 2700 ° C), and resistance to chemical destruction and thermal shock.
Di pelên seramîk de, the polytype is commonly selected based upon the intended usage: 6H-SiC prevails in architectural applications as a result of its convenience of synthesis, while 4H-SiC controls in high-power electronics for its superior fee provider wheelchair.
The broad bandgap (2.9– 3.3 eV depending on polytype) additionally makes SiC an exceptional electric insulator in its pure type, though it can be doped to function as a semiconductor in specialized digital tools.
1.2 Mîkrostruktur û Paqijiya Qonaxê di Platên Seramîk de
The performance of silicon carbide ceramic plates is critically depending on microstructural features such as grain size, qewîtî, homojeniya qonaxê, and the existence of additional stages or contaminations.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders with sophisticated sintering methods, dibe sedema ziravî, totally dense microstructures that maximize mechanical toughness and thermal conductivity.
Contaminations such as complimentary carbon, silica (SiO DU), or sintering help like boron or light weight aluminum have to be thoroughly regulated, as they can form intergranular films that lower high-temperature stamina and oxidation resistance.
Recurring porosity, also at reduced degrees (
Seramîkên pêşkeftî di Cotmehê de hate damezrandin 17, 2012, pargîdaniyek teknolojîya bilind e ku bi lêkolîn û pêşkeftinê ve girêdayî ye, çêkerî, xebitandinî, firotan û karûbarên teknîkî yên materyalên têkildar ên seramîk ên wekî Plateyên Seramîk ên Silicon Carbide. Berhemên me bi Hilberên Seramîk ên Boron Carbide ve lê ne sînorkirî ne, Berhemên Seramîk ên Boron Nitride, Berhemên Seramîk ên Silicon Carbide, Berhemên Seramîk ên Silicon Nitride, Berhemên Seramîk ên Zirconium Dioxide, etc. Ger bala we dikişîne, ji kerema xwe bi me re têkilî daynin.
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