1. Crystallography da Ka'idodin Kayayyakin Silicon Carbide
1.1 Polymorphism da Atomic Bonding a cikin SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) wani abu ne na yumbu mai hade da siliki da carbon atom a cikin wani 1:1 stoichiometric rabo, an gano ta ta hanyar polymorphism na musamman– a kan 250 sanannun polytypes– duk raba ingantattun hanyoyin haɗin gwiwar kwatance amma sun bambanta a cikin jerin jerin Si-C bilayers.
Ɗaya daga cikin mafi dacewa polytypes shine 3C-SiC (cubic zinc blende framework), da nau'ikan hexagonal 4H-SiC da 6H-SiC, kowane yana nuna bambance-bambancen dabara a cikin bandgap, motsi na lantarki, da thermal conductivity wanda ke shafar dacewarsu don aikace-aikacen cikakkun bayanai.
Taurin Si– C bond, tare da bond energy na wajen 318 kJ/mol, yana tabbatar da ingantaccen ƙarfi na SiC (Mohs mai ƙarfi na 9– 9.5), high narkewa factor (~ 2700 ° C), da juriya ga lalata sinadarai da girgiza zafi.
A cikin faranti na yumbura, nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i nau'i) zaɓi bisa ga abin da aka yi nufi: 6H-SiC ya yi nasara a aikace-aikacen gine-gine sakamakon dacewarsa na kira, yayin da 4H-SiC ke sarrafawa a cikin na'urorin lantarki mai ƙarfi don mafi kyawun mai ba da kujerun guragu.
Babban bandgap (2.9– 3.3 eV dangane da polytype) Hakanan yana sanya SiC ta zama na'urar insulator na musamman a cikin nau'in sa mai tsabta, ko da yake ana iya doped don aiki azaman semiconductor a cikin kayan aikin dijital na musamman.
1.2 Karamin tsari da Tsabtace mataki a cikin faranti na yumbu
Ayyukan faranti na yumbura na silicon carbide yana da matukar mahimmanci dangane da fasalulluka na microstructural kamar girman hatsi, kauri, mataki homogenity, da kasancewar ƙarin matakai ko gurɓatawa.
Yawancin faranti masu daraja yawanci ana ƙirƙira su daga submicron ko nanoscale SiC foda tare da ingantattun hanyoyin sintering, haifar da m-grained, gaba ɗaya m microstructures cewa kara inji taurin da thermal conductivity.
gurɓatawa kamar carbon complimentary, siliki (SiO BIYU), ko taimakon sintering kamar boron ko aluminum mai nauyi dole ne a daidaita su sosai, kamar yadda za su iya samar da fina-finai na intergranular waɗanda ke rage ƙarfin zafin jiki da juriya na iskar shaka.
Maimaituwar porosity, kuma a rage digiri (
Advanced Ceramics kafa a Oktoba 17, 2012, babban kamfani ne na fasaha mai himma ga bincike da haɓakawa, samarwa, sarrafawa, tallace-tallace da sabis na fasaha na kayan dangi na yumbu kamar Silicon Carbide Ceramic Plates. Kayayyakinmu sun haɗa amma ba'a iyakance ga samfuran yumbura na Boron Carbide ba, Boron Nitride Ceramic Products, Silicon Carbide Ceramic Products, Silicon Nitride Ceramic Products, Zirconium Dioxide Ceramic Products, da dai sauransu. Idan kuna sha'awar, don Allah a ji daɗin tuntuɓar mu.
Tags: farantin karfe siliki,farantin karfe,siliki carbide takardar
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