1. I-Crystallography kunye nezinto eziSiseko zeSilicon Carbide
1.1 I-Polymorphism kunye ne-Atomic Bonding kwi-SiC
(Iipleyiti zeCeramic zeSilicon Carbide)
I-silicon carbide (SiC) yinto edibeneyo yeceramic eyenziwe ngesilicon kunye neeathom zekhabhoni kwi 1:1 umlinganiselo we-stoichiometric, ichongwe ngepolymorphism yayo ekhethekileyo– ngaphaya 250 iipolytypes ezaziwayo– zonke zabelana ngezibophelelo eziluqilima zomkhombandlela kodwa zahluka kuthotho lwee-Si-C bilayers.
Enye yeepolytypes ezifanelekileyo kakhulu yi-3C-SiC (isakhelo cubic zinc blende), kunye neentlobo ezine-hexagonal 4H-SiC kunye ne-6H-SiC, nganye ibonisa iinguqu ezifihlakeleyo kwi-bandgap, ukuhamba kwe-electron, kunye ne-thermal conductivity echaphazela ukufaneleka kwabo kwiinkcukacha zezicelo.
Ukuqina kweSi– C bond, ngamandla bond of roughly 318 kJ/mol, ixhasa ukuqina okumangalisayo kweSiC (Mohs ukuqina kwe9– 9.5), into ephezulu yokunyibilika (~ 2700 °C), kunye nokuchasana nokutshatyalaliswa kweekhemikhali kunye nokutshatyalaliswa kwe-thermal.
Kwiipleyiti ze-ceramic, i-polytype idla ngokukhethwa ngokusekelwe kusetyenziso olucetywayo: 6I-H-SiC iphumelela kwizicelo zezakhiwo ngenxa yokulungelelaniswa kwayo, ngelixa i-4H-SiC ilawula kwi-elektroniki yamandla aphezulu kwisitulo esinamavili somboneleli womrhumo ophezulu.
Umsantsa obanzi (2.9– 3.3 I-eV ixhomekeke kwipolytype) ukongezelela yenza i-SiC ibe sisithinteli sombane esikhethekileyo kuhlobo lwayo olusulungekileyo, nangona inokuthi yenziwe ukuba isebenze njenge-semiconductor kwizixhobo ezikhethekileyo zedijithali.
1.2 I-Microstructure kunye ne-Stage Purity kwi-Ceramic Plates
Ukusebenza kwe-silicon carbide iipleyiti ze-ceramic kuxhomekeke kakhulu kwiimpawu ze-microstructural ezifana nobukhulu beenkozo, ubukhulu, umgangatho we-homogeneity, kunye nobukho bezigaba ezongezelelweyo okanye ungcoliseko.
Iipleyiti zomgangatho ophezulu zihlala zenziwe ukusuka kwi-submicron okanye i-nanoscale SiC powders kunye neendlela ezinzulu zokucoca., ebangela igrained, I-microstructures exinene ngokupheleleyo eyenza ukuqina koomatshini kunye nokuhanjiswa kwe-thermal.
Ungcoliseko olufana nekhabhoni yoncedo, i-silica (SiO ZIMBINI), okanye uncedo lwe-sintering njenge-boron okanye i-aluminiyam enobunzima obulula kufuneka ilawulwe ngokucokisekileyo, njengoko zinokwenza iifilimu ze-intergranular ezinciphisa amandla obushushu obuphezulu kunye nokumelana ne-oxidation.
I-porosity ephindaphindiweyo, kwakhona kwiidigri ezincitshisiweyo (
Advanced Ceramics yasekwa ngo-Oktobha 17, 2012, lishishini lobugcisa obuphezulu elizinikele kuphando nophuhliso, imveliso, ukuqhubekeka, ukuthengisa kunye neenkonzo zobugcisa bezixhobo ze-ceramic ezinxulumene ne-Silicon Carbide Ceramic Plates. Iimveliso zethu ziquka kodwa aziphelelanga kwiiMveliso zeCeramic zeBoron Carbide, IiMveliso zeCeramic zeBoron Nitride, Iimveliso zeCeramic zeSilicon Carbide, Iimveliso zeCeramic zeSilicon Nitride, IZirconium Dioxide yeeMveliso zeCeramic, njl. Ukuba unomdla, nceda uzive ukhululekile ukuqhagamshelana nathi.
Iithegi: ipleyiti ye-silicon carbide,ipleyiti ye-carbide,iphepha le-silicon carbide
Onke amanqaku kunye nemifanekiso avela kwi-Intanethi. Ukuba kukho nayiphi na imiba ye-copyright, nceda uqhagamshelane nathi ngexesha lokucima.
Sibuze