1. IMigaqo yeMveliso kunye noBume boBume
1.1 I-Crystal Chemistry kunye nePolymorphism
(IiCrucibles zeSilicon Carbide)
I-silicon carbide (SiC) yiceramic edityanisiweyo eyenziwe ngesilicon kunye neeathom zekhabhoni ezimiswe kwilathisi yetetrahedral., ukuphuhlisa phakathi kweyona mathiriyeli ithermally kunye nekhemikhali ehlala ixesha elide eqondwayo.
Ikhona ngaphezulu 250 iintlobo ze-polytypic, kunye ne3C (cubic), 4H, kunye nezakhiwo ze-6H ezine-hexagonal zifaneleke kakhulu kwizicelo zokushisa okuphezulu.
USi owomeleleyo– C iibhondi, ngamandla bond ukuya ngaphaya 300 kJ/mol, zinika ukuqina okungaqhelekanga, conductivity thermal, kunye nokuchasana nokutshatyalaliswa kwe-thermal kunye nokuhlaselwa kweekhemikhali.
Kwizicelo ze-crucible, I-sintered okanye i-reaction-bonded SiC ikhethwa ngenxa yokukwazi kwayo ukugcina uzinzo lolwakhiwo phantsi kweemitha ezishushu ezishushu kunye ne-atmosphere eyonakalisayo..
Ngokungafaniyo neeramics ze-oxide, I-SiC ayenzi utshintsho lwesigaba esiphazamisayo njengento ephantsi kwayo (~ 2700 °C), ukuyenza ilungele inkqubo ezinzileyo engentla 1600 °C.
1.2 Ukusebenza kweThermal kunye neMechanical
Uphawu olucacileyo lwe-SiC crucibles yi-conductivity ephezulu ye-thermal– ukusuka kwi 80 ukuya 120 W/(m · K)– ebhengeza ukujikeleza kobushushu obufanayo kwaye ithobe ukuxhalaba kwe-thermal ngexesha lokufudumeza okukhawulezileyo okanye ukupholisa umoya.
Le ndawo yokuhlala ihluke kakhulu kunye neeporcelains eziphantsi-conductivity ezifana ne-alumina (≈ 30 W/(m · K)), ezisengozini yokwaphuka phantsi komothuko we-thermal.
I-SiC iphinda ibonise amandla akhethekileyo omatshini kumanqanaba aphezulu obushushu, ukugcina ngaphezulu 80% yokuqina kwegumbi-ubushushu obuguquguqukayo (Nangona ku 400 MPa) nokuba ku 1400 °C.
I-coefficient yayo encitshisiweyo yokwandiswa kwe-thermal (~ 4.0 × 10 ⁻⁶/ K) kwandisa ngakumbi ukuxhathisa ukothuka kwe-thermal, eyona nto ibalulekileyo ithathela ingqalelo ukuphinda ibhayisekile phakathi kwamaqondo obushushu obungqongileyo kunye nawokusebenza.
Ukwengeza, I-SiC ibonisa ukunxitywa kwe-premium kunye nokuxhathisa i-abrasion, Ukuqinisekisa ukuba ubomi benkonzo ende kwiatmosphere equka ukuphatha ngoomatshini okanye ukutyhutyha kwesaqhwithi.
2. Iindlela zokuVelisa kunye noLawulo lweMicrostructural
( IiCrucibles zeSilicon Carbide)
2.1 Iindlela zeSintering kunye neendlela zoxinaniso
I-Industrial SiC crucibles iveliswa ngokuyintloko nge-sintering engenaxinzelelo, ukudibanisa impendulo, okanye ukucinezela okushushu, nganye ibonelela ngeenzuzo ezizodwa kwiindleko, ubunyulu, kunye nokusebenza.
I-sintering engenaxinzelelo ibandakanya ukudibanisa umgubo we-SiC omkhulu kunye nezinto zokuncedisa ezifana ne-boron kunye nekhabhoni, ithotyelwe ngonyango lobushushu obuphezulu (2000– 2200 °C )kwiatmosfera engasebenziyo ukuze kuphunyezwe ingxinano ekufutshane nethiyori.
Obu buchule buvelisa ubunyulu obuphezulu, ii-crucibles high-high-high ezifanelekileyo kwi-semiconductor kunye nokuphathwa kwe-alloy eqhubekayo.
I-Reaction-bonded SiC (RBSC) yenziwe ngokugqobhoza i-porous carbon preform kunye nesilicon etyhidiweyo, esabelayo ukwenza i-β-SiC yokuhlala, okukhokelela kwikhompawundi ye-SiC kunye ne-silicon ephindaphindiweyo.
Ngelixa kuncitshiswe kancinci kwi-thermal conductivity ngenxa yokongezwa kwe-silicon yesinyithi, I-RBSC ibonelela ngozinzo olukumgangatho ophezulu kunye nexabiso eliphantsi lemveliso, iyenza ibonakale kusetyenziso olukhulu lwezorhwebo.
I-SiC ecinezelwe ngokushushu, nangona zibiza kakhulu, inika ubukhulu obukhulu kunye nobunyulu, igcinelwe izicelo ezifunwa kakhulu njengophuhliso lwekristale enye.
2.2 Umgangatho oPhezulu oPhezulu kunye nokuchaneka kweJometri
Post-sintering machining, equka ukucola nokuhlamba, iqinisekisa ukuchasana okuthe ngqo komgangatho kunye nomphezulu ogudileyo wangaphakathi onciphisa iiwebhusayithi ze-nucleation kunye nokunciphisa ingozi yosulelo.
Uburhabaxa bomphezulu bulawulwa ngononophelo kakhulu ukumisa ukuncamatheliswa kwenyibiliki kwaye kube lula ukukhutshwa kweemveliso ezomeleziweyo ngokulula.
Ijometri yeCrucible– njengobunzima bodonga lomphezulu, i-angle ye-taper, kunye negophe elisezantsi– iphuculwe ukulinganisela ubunzima be-thermal, ukuqina kolwakhiwo, kunye nokuhambelana nesitshisi sokufudumala.
Uyilo olulungiselelweyo luvumela imiqulu ethile yokunyibilika, iiprofayili zokufudumeza, kunye nobuntununtunu bezinto eziphathekayo, Ukuqinisekisa ukusebenza ngokugqibeleleyo kuzo zonke iinkqubo zoshishino ezahlukeneyo.
Ulawulo lomgangatho ophezulu, kuquka i-X-ray diffraction, ukuskena i-electron microscopy, kunye nokuhlolwa kwe-ultrasonic, iqinisekisa i-microstructural homogeneity kunye nokungabikho kwemiba efana neepores okanye ukuhlukana.
3. Ukunyangwa kweMichiza kunye nokuSebenza kunye ne-Melts
3.1 Ukunganyanzeli kwiNdawo eAggressive
I-SiC crucibles ibonisa ukuxhathisa okubalaseleyo ekuhlaselweni kweekhemikhali ngeentsimbi ezityhidiweyo, ububele, kunye neetyuwa ezingena-oxidizing, ukugqithisa iiramics eziqhelekileyo zegraphite kunye neoksidi.
Zikhuselekile xa zidibana ne-aluminiyam etyhidiweyo, ubhedu, isilivere, kunye neengxube zazo, ukuxhathisa ukumanzisa kunye nokutshatyalaliswa ngenxa yamandla angaphantsi kobuso kunye nokwakhiwa kwee-oxides ezikhusela umhlaba..
Kwi-silicon kunye ne-germanium yokuphatha i-photovoltaics kunye ne-semiconductors, Iicrucibles ze-SiC zithintela ungcoliseko lwesinyithi olunokuthi buthathaka iipropathi zokuhlala zedijithali.
Nangona kunjalo, phantsi kweemeko ze-oxidizing kakhulu okanye ekubonakaleni kweenguqu ze-alkaline, I-SiC inokwenza i-oxidize ukuphuhlisa i-silica (SiO ₂), enokuthi iphendule ngakumbi ukwenza i-silicates ephantsi-encibilikayo.
Ngeso sizathu, I-SiC yeyona nto ihambelana nokungathathi hlangothi okanye ukunciphisa imimandla, apho uzinzo lwayo lwandiswa.
3.2 Unyino kunye nokuQhubelana nokuqwalaselwa
Nangona ukuqina kwayo, I-SiC ayisebenzi yonke indawo; isabela kunye neemveliso ezithile ezityhidiweyo, ingakumbi isinyithi-iqela lesinyithi (Fe, Kwi, Co) kumaqondo aphezulu kunye ne-carburization kunye neenkqubo zokuchithwa.
Kwiprosesa yensimbi ene-liquified, Izikhonkwane ze-SiC ziwohloka ngokukhawuleza kwaye ngenxa yeso sizathu ziyathintelwa.
Ngendlela efanayo, ii-antacids kunye neentsimbi zomhlaba zealkaline (umz., Li, Sele, Ca) inokunciphisa i-SiC, ukuqaliswa kwekhabhoni kunye nokudala iisilidi, ukunciphisa ukusetyenziswa kwazo kwi-synthesis yemathiriyeli yebhetri okanye ukuphosa kwentsimbi esebenzayo.
Kwiglasi enyibilikisiweyo kunye neeseramikhi, I-SiC ihlala ihambelana kodwa inokubonisa umkhondo wesilicon ngqo kwiiglasi zamehlo ezibukhali kakhulu okanye ze-elektroniki.
Ukuqaphela olu nxibelelwano lukhethekileyo luyimfuneko ekukhetheni uhlobo olufanelekileyo lwe-crucible kunye nenkqubo yokuqinisekisa ubunyulu kunye nokuphila ixesha elide..
4. Izicelo zoShishino kunye neNguqulelo yezobuGcisa
4.1 Isinyithi, Semiconductor, kunye namaCandelo oMbane oVuselelekayo
Iicrucibles ze-SiC zibalulekile kwimveliso ye-multicrystalline kunye ne-monocrystalline ingots yesilicon yeebhetri zelanga., apho bema khona ukuvezwa ngokuthe ngqo ixesha elide kwisilicon etyhidiweyo e ~ 1420 °C.
Ukhuseleko lwabo lwe-thermal lwenza ukuxinana okufanayo kunye nokunciphisa ukuxinana kwe-dislocation, echaphazela ngqo ukusebenza kakuhle kwelanga.
Kwimizi-mveliso, Iicrucibles ze-SiC zisetyenziselwa ukunyibilikisa iintsimbi ezingenayo i-ferrous ezifana ne-aluminiyam kunye nobhedu., ukunika ubude bobomi obude kunye nokuncipha kophuhliso lwenkunkuma xa kuthelekiswa nokhetho lodongwe lwegraphite.
Zikwasetyenziswa kwilebhu yobushushu obuphezulu kuvavanyo lwe-thermogravimetric., Umahluko wokuskena ikhalorimetry, kunye nokudityaniswa kweeporcelains ezinobugocigoci kunye neekhompawundi ze-intermetallic.
4.2 IiFads zexesha elizayo kunye noDityaniso lweMveliso ePhezulu
Usetyenziso oluvelayo lubandakanya ukusetyenziswa kwe-SiC crucibles kwisizukulwana esilandelayo sokuhlola iimveliso zenyukliya kunye ne-reactors yetyuwa etyhidiweyo., apho ukuxhathisa kwazo kwimitha kunye neefluorides ezinyibilikisiweyo kuvavanywayo.
Iingubo ezifana ne-pyrolytic boron nitride (PBN) okanye yttria (Y ZIMBINI O ₃) zifakwa kwiindawo ezingaphezulu ze-SiC ukongezelela ukongezelela ukunganyanzeli kweekhemikhali kunye nokuyeka ukusasazwa kwe-silicon kwiinkqubo zokucoceka okuphezulu kakhulu..
Ukuveliswa okongeziweyo kwezinto ze-SiC ezisebenzisa ijethi yokubopha okanye i-stereolithography kuphantsi kophuhliso, iijiyometri zoncedo olunomtsalane kunye neprototyping ekhawulezayo yoyilo olukhethekileyo lwecrucible.
Njengoko ikhula imfuno yokonga amandla, ihlala ixesha elide, kunye nokuphatha ubushushu obuphezulu obungenangcoliseko, I-silicon carbide crucibles ngokuqinisekileyo iya kuhlala ilitye lembombo letekhnoloji yanamhlanje ekuveliseni iimveliso eziphambili.
Ukuququmbela, I-silicon carbide crucibles imele into ebalulekileyo evumelayo kubushushu obuphezulu kwiinkqubo zoshishino kunye nekliniki.
Indibaniselwano yabo engalinganiyo yokuzinza kwe-thermal, ukuqina koomatshini, kunye nokuchasana kweekhemikhali kubenza babe yimpahla yokuzikhethela kwizicelo apho ukusebenza kunye nokuthembeka kubaluleke kakhulu.
5. Umboneleli
Advanced Ceramics yasekwa ngo-Oktobha 17, 2012, lishishini lobugcisa obuphezulu elizinikele kuphando nophuhliso, imveliso, ukuqhubekeka, ukuthengisa kunye neenkonzo zobugcisa bezixhobo ze-ceramic ezinxulumene neemveliso. Iimveliso zethu ziquka kodwa aziphelelanga kwiiMveliso zeCeramic zeBoron Carbide, IiMveliso zeCeramic zeBoron Nitride, Iimveliso zeCeramic zeSilicon Carbide, Iimveliso zeCeramic zeSilicon Nitride, IZirconium Dioxide yeeMveliso zeCeramic, njl. Ukuba unomdla, nceda uzive ukhululekile ukuqhagamshelana nathi.
Iithegi: IiCrucibles zeSilicon Carbide, I-Silicon Carbide Ceramic, IiCrucible zeCeramic zeSilicon Carbide
Onke amanqaku kunye nemifanekiso avela kwi-Intanethi. Ukuba kukho nayiphi na imiba ye-copyright, nceda uqhagamshelane nathi ngexesha lokucima.
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