1. Ụkpụrụ ngwaahịa na Njirimara Ọdịdị
1.1 Crystal Chemistry na Polymorphism
(Silicon Carbide Crucibles)
Silicon carbide (SiC) bụ seramiiki covalent mejupụtara silicon na carbon atom nke edobere na tetrahedral latticework., na-etolite n'otu n'ime ihe ndị kachasị na-ekpo ọkụ na nke kemịkalụ ghọtara.
Ọ dị na n'ofe 250 ụdị polytypic, na 3C (cubic), 4H, na 6H akụkụ hexagonal bụ ihe kachasị mma maka ngwa okpomọkụ dị elu.
Si siri ike– C nkekọ, na ike nkekọ na-agabiga 300 kJ/mol, na-enye nkwụsi ike pụrụ iche, thermal conductivity, na iguzogide ujo thermal na iku ume kemịkalụ.
Na crucible ngwa, A na-ahọrọ SiC nwere njikọ chiri anya ma ọ bụ mmeghachi omume n'ihi ike ya idowe nkwụsi ike ụlọ n'okpuru gradients siri ike na ikuku gbazere agbaze..
N'adịghị ka oxide ceramik, SiC anaghị eme mgbanwe n'ọgbọ na-akpaghasị ihe dịka ihe kpatara ya (~ 2700 Celsius C), na-eme ka ọ dị mma maka usoro dịgidere n'elu 1600 Celsius C.
1.2 Igwe ọkụ na arụrụ arụ ọrụ
Ihe na-akọwapụta nke SiC crucibles bụ nnukwu ikuku okpomọkụ ha– sitere na 80 ka 120 W/(m · K)– nke na-akpọsa mgbasa ọkụ otu ma na-ebelata nchekasị okpomọkụ n'oge ikpo ọkụ ma ọ bụ ntụ oyi.
Ngwongwo obibi a dị nnọọ iche na poselin adịghị arụ ọrụ dị ka alumina (≈ 30 W/(m · K)), bụ ndị na-adịghị ike imebi n'okpuru okpomọkụ ujo.
SiC na-egosipụtakwa ike arụ ọrụ pụrụ iche na ọkwa okpomọkụ dị elu, na-ejigide 80% nke ime ụlọ-okpomọkụ siri ike na-agbanwe agbanwe (dị ka 400 MPa) ọbụlagodi na 1400 Celsius C.
Mbelata ọnụọgụ nke mgbasawanye thermal (~ 4.0 × 10 ⁻ / K) ọzọ boosts iguzogide thermal ujo, ihe dị mkpa tụlere ịnya igwe ugboro ugboro n'etiti ọkwa ihu igwe na arụ ọrụ.
Na mgbakwunye, SiC na-egosi iyi adịchaghị mma yana nguzogide abrasion, ijide n'aka na ndụ ogologo ndụ na ikuku na-agụnye njikwa igwe ma ọ bụ mgbasa ozi na-ekpo ọkụ.
2. Ụzọ nrụpụta na njikwa microstructural
( Silicon Carbide Crucibles)
2.1 Ụzọ mkpirisi na usoro njupụta
A na-emepụta crucibles SiC nke ụlọ ọrụ site na nrụgide na-enweghị nrụgide, njikọ nzaghachi, ma ọ bụ ịpị ọkụ, nke ọ bụla na-enye uru pụrụ iche na ọnụ ahịa, ịdị ọcha, na arụmọrụ.
Sintering enweghị nrụgide na-agụnye ịgbakọ nnukwu ntụ ntụ SiC na ihe enyemaka dị ka boron na carbon, kwadoro site na ọgwụgwọ okpomọkụ dị elu (2000– 2200 Celsius C )na inert ikuku iji rụzuo nso-theore njupụta.
Usoro a na-emepụta ịdị ọcha dị elu, crucibles ike dị elu kwesịrị ekwesị maka semiconductor na njikwa alloy na-aga n'ihu.
SiC jikọtara mmeghachi omume (RBSC) emepụtara site na iji silicon a wụrụ awụ banye n'ime oghere carbon preform, nke na-emeghachi omume ịmepụta β-SiC ọdụ, na-akpata ngwakọta nke SiC na silicon ugboro ugboro.
Mgbe ntakịrị belatara na conductivity thermal n'ihi mgbakwunye ọla silicon, RBSC na-enye nkwụsi ike akụkụ na ọnụahịa nrụpụta dị ala, na-eme ka ọ pụta ìhè maka nnukwu azụmahịa.
SiC arụgidere ọkụ, ọ bụ ezie na ọ dị ọnụ karịa, na-enye nnukwu ọkpụrụkpụ na ịdị ọcha, edobere maka ngwa na-achọ oke oke dịka mmepe otu kristal.
2.2 Ọdịmma dị elu dị elu yana nhazi geometric
Post-sintering machining, nke mejupụtara igwe ihe na ịsa, na-eme ka nkwụsi ike n'ụdị dị iche iche na ebe dị mma dị n'ime na-ebelata weebụsaịtị webụsaịtị ma belata ihe egwu mmetọ.
A na-eji nlezianya jikwaa ịdị ike nke dị n'elu iji kwụsị ịgbara mgbakasị ma mee ka ntọhapụ nke ngwaahịa agbasiri ike dị mfe.
Jiometry na-enweghị ike ime– dị ka mgbidi elu ọkpụrụkpụ, taper akụkụ, na obere curvature– a na-emewanyewanye ya iji dozie oke okpomọkụ, ike nhazi, na ndakọrịta na ọkụ ọkụ.
Ụdị ahaziri ahazi na-anabata ụfọdụ mpịakọta ọkụ, profaịlụ kpo oku, na ihe mmetụta, na-ekwe nkwa ịrụ ọrụ kacha mma n'oge usoro mmepụta ihe dị iche iche.
Njikwa ogo dị elu, gụnyere X-ray diffraction, nyochaa eletrọn microscope, na ultrasonic screening, na-akwado homogeneity microstructural na enweghị okwu dị ka pores ma ọ bụ nkewa.
3. Nguzogide kemịkalụ na mmekọrịta ya na Melts
3.1 Inertness na gburugburu ebe ike ike
SiC crucibles na-egosipụta nguzogide pụtara ìhè na mwakpo kemịkalụ site na nchara gbazere, ụdị, na nnu na-adịghị oxidizing, gafere graphite na seramiki oxide.
A na-echekwa ha na kọntaktị na aluminom gbazere, ọla kọpa, ọlaọcha, na ha alloys, iguzogide wetting na mgbasa n'ihi obere ike interfacial na nguzobe nke nchebe elu oxides.
Na silicon na germanium njikwa maka fotovoltaics na semiconductor, SiC crucibles na-egbochi mmetọ ọla nke nwere ike imebi akụrụngwa obibi dijitalụ.
Agbanyeghị, n'okpuru oke oxidizing ọnọdụ ma ọ bụ na visibiliti nke alkaline mgbanwe, SiC nwere ike oxidize iji mepụta silica (SiO ₂), nke nwere ike ịzaghachi ọbụna karịa iji mepụta silicates dị ala na-agbaze.
N'ihi ya, SiC kacha mma maka nnọpụiche ma ọ bụ ibelata gburugburu, ebe nkwụsi ike ya na-abawanye.
3.2 Oke na echiche ndakọrịta
N'agbanyeghị ike ya, SiC abụghị inert zuru ụwa ọnụ; ọ na-emeghachi omume na ngwaahịa ụfọdụ gbazere, karịsịa ígwè-otu ọla (Fe, N'ime, Co) na elu okpomọkụ na carburization na mgbasa usoro.
Na nhazi ígwè mmiri mmiri, SiC crucibles na-akawanye ngwa ngwa ma bụrụ nke a na-ezere ya.
N'otu aka ahụ, antacids na ala alkaline ígwè (eg, Li, Ugbua, Ca) nwere ike wedata SiC, ịmalite carbon na ịmepụta silicides, na-amachi ojiji ha na njikọ ihe batrị ma ọ bụ nkedo nchara arụ ọrụ.
Maka iko mmiri mmiri na ceramik, SiC na-adakọkarị ma ọ nwere ike weta silicon trace ozugbo n'ime enyo anya ma ọ bụ eletrọnịkị nwere mmetụta dị oke egwu.
Ịghọta mmekọrịta ndị a kpọmkwem ihe dị mkpa maka ịhọrọ ụdị crucible kwesịrị ekwesị na ikwe ka usoro ahụ dị ọcha na ogologo ndụ ogologo ndụ..
4. Ngwa ụlọ ọrụ na mgbanwe teknụzụ
4.1 Metallurgy, Semiconductor, yana ngalaba ume ọhụrụ
SiC crucibles dị mkpa na mmepụta nke multicrystalline na monocrystalline silicon ingots maka batrị anyanwụ., ebe ha guzoro ruo ogologo oge ikpughe na silicon a wụrụ awụ na ~ 1420 Celsius C.
Nchekwa okpomọkụ ha na-eme ka ụfọdụ condensation otu ma na-ebelata njupụta dislocation, ogologo emetụta anyanwụ arụmọrụ.
Na ụlọ mmepụta ihe, A na-eji crucibles SiC eme ihe maka agbaze ọla ndị na-abụghị igwe dị ka aluminom na ọla, na-enye ogologo ndụ ogologo yana mbelata mmepe ikuku dị iche na nhọrọ ụrọ-graphite.
A na-ejikwa ha na ụlọ nyocha dị elu maka nyocha thermogravimetric, calorimetry nyocha dị iche, na njikọ nke poselin siri ike na ogige intermetallic.
4.2 Fads n'ọdịnihu na Ngwakọta ngwaahịa dị elu
Ngwa na-apụta bụ iji SiC crucibles na nyocha ngwaahịa nuklia na-abịa n'ọgbọ yana reactors nnu gbazere., ebe a na-enyocha nguzogide ha na radieshon na fluorides gbazere.
Mkpuchi dị ka pyrolytic boron nitride (PBN) ma ọ bụ yttria (Y ABỤỌ O ₃) A na-etinye ya na mpaghara elu SiC iji kwalite kemịkalụ kemịkalụ ma kwụsị mgbasa silicon na usoro ịdị ọcha dị oke elu..
A na-emepe mmepụta ihe mgbakwunye nke ihe SiC na-eji binder jetting ma ọ bụ stereolithography, geometrices akụrụngwa na-adọrọ adọrọ na ngwa ngwa prototyping maka atụmatụ crucible pụrụ iche.
Ka mkpa na-etolite maka ike-arụ ọrụ nke ọma, na-anọ ogologo oge, na njikwa oke okpomọkụ na-enweghị mmetọ, Silicon carbide crucibles ga-anọgide na-abụ isi nkuku teknụzụ ọgbara ọhụrụ na-emepụta ngwaahịa dị elu.
Na ngwụcha, Crucibles silicon carbide na-anọchite anya mmewere na-enye ohere dị oke ọkụ na usoro ụlọ ọrụ dị elu na ụlọ ọgwụ.
Ngwakọta ha na-enweghị atụ nke nkwụsi ike nke okpomọkụ, n'ibu ike, na nguzogide kemịkalụ na-eme ka ha bụrụ ihe a na-ahọrọ maka ngwa ebe arụmọrụ na ntụkwasị obi dị oke mkpa.
5. Onye na-enye
Advanced Ceramics tọrọ ntọala na October 17, 2012, bụ ụlọ ọrụ teknụzụ dị elu kwadoro nyocha na mmepe, mmepụta, nhazi, ahịa na ọrụ aka nke seramiiki ikwu ihe na ngwaahịa. Ngwaahịa anyị gụnyere mana ọnweghị oke na ngwaahịa seramiiki Boron Carbide, Ngwaahịa seramiiki boron nitride, Ngwaahịa seramiiki Silicon Carbide, Ngwaahịa seramiiki silicon Nitride, Ngwaahịa seramiiki Zirconium Dioxide, wdg. Ọ bụrụ na ị nwere mmasị, biko nweere onwe gị ịkpọtụrụ anyị.
Tags: Silicon Carbide Crucibles, Silicon Carbide Ceramic, Silicon Carbide Ceramic Crucibles
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