1. Izimiso Zomkhiqizo kanye Nesimo Sesakhiwo
1.1 I-Crystal Chemistry kanye nePolymorphism
(I-Silicon Carbide Crucibles)
I-silicon carbide (I-SiC) i-ceramic ehlangene eyakhiwe nge-silicon nama-athomu e-carbon amiswe ku-tetrahedral latticework., ukukhula phakathi kwento eyodwa yezinto ezihlala isikhathi eside ezishisayo namakhemikhali eziqondwayo.
Ikhona ekupheleni 250 izinhlobo ze-polytypic, nge 3c (cubic), 4H, kanye nezakhiwo ezingama-hexagonal ezingu-6H ezifaneleke kakhulu ekusetshenzisweni kwezinga lokushisa eliphezulu.
Onamandla uSi– C amabhondi, ngamandla ebhondi adlula 300 kJ/mol, nikeza ukuqina okungavamile, conductivity ezishisayo, kanye nokumelana nokushaqeka okushisayo kanye nesiteleka samakhemikhali.
Kuzinhlelo zokusebenza ze-crucible, I-Sintered noma i-reaction-bonded SiC ikhethwa ngenxa yekhono layo lokugcina ukuzinza kwezakhiwo ngaphansi kwama-gradient ashisayo aqinile kanye nomkhathi oncibilikisiwe obhubhisayo..
Ngokungafani ne-oxide ceramics, I-SiC ayenzi izinguquko zesigaba esiphazamisayo kakhulu njengesici sayo se-sublimation (~ 2700 °C), okwenza ifanele inqubo eqhubekayo ngenhla 1600 °C.
1.2 Ukusebenza Okushisayo Nemishini
Isici esichazayo se-SiC crucibles yi-conductivity ephezulu ye-thermal– kusukela 80 ku 120 W/(m · k)– ekhangisa ukusakazwa kwemfudumalo efanayo futhi inciphise ukukhathazeka okushisayo phakathi nokushisisa okusheshayo noma isimo somoya.
Le ndawo yokuhlala ihluke kakhulu kuma-porcelain aphansi-conductivity afana ne-alumina (≈ 30 W/(m · k)), ezisengozini yokuphuka ngaphansi kokushaqeka okushisayo.
I-SiC iphinde ibonise amandla akhethekile emishini emazingeni okushisa aphakeme, ukugcina phezu 80% yokuqina kwayo okuguquguqukayo kwegumbi-izinga lokushisa (kangango ba 400 I-MPa) ngisho naku 1400 °C.
I-coefficient yayo encishisiwe yokunwetshwa kwe-thermal (~ 4.0 × 10 ⁻⁶/ K) futhi kuqinisa ukumelana nokushaqeka okushisayo, okubalulekile cabangela ukugibela ibhayisikili okuphindaphindiwe phakathi kwamazinga okushisa azungezile kanye nokusebenza.
Ngaphezu kwalokho, I-SiC ibonisa ukuguga kwe-premium kanye nokumelana nokuhuzuka, ukwenza isiqiniseko sempilo ende yesevisi emkhathini ohlanganisa ukuphatha ngomshini noma ukuncibilika okuneziphepho.
2. Izindlela Zokukhiqiza kanye Nokulawulwa Kwezakhiwo Ezincane
( I-Silicon Carbide Crucibles)
2.1 Izindlela ze-Sintering kanye Nezindlela Zokuminyana
I-Industrial SiC crucibles ikhiqizwa ngokuyinhloko nge-sintering engenasici, ukuhlangana kwempendulo, noma ukucindezela okushisayo, ngayinye inikeza izinzuzo eziyingqayizivele ngezindleko, ubumsulwa, kanye nokusebenza.
I-sintering engenangcindezi ihlanganisa ukuhlanganisa impushana ye-SiC enkulu ngezinsiza zokuthambisa ezifana ne-boron ne-carbon, kuthotshelwe ukwelashwa okunezinga lokushisa eliphezulu (2000– 2200 °C )emkhathini ongasebenzi ukuze kufezeke ukuminyana okuseduze kwethiyori.
Le nqubo ikhiqiza ukuhlanzeka okuphezulu, ama-crucibles aphezulu afanele i-semiconductor kanye nokuphathwa kwe-alloy okuthuthukisiwe.
I-Reaction-bonded SiC (I-RBSC) idalwe ngokungena kwi-porous carbon preform ene-silicon encibilikisiwe, esabelayo ukuze idale ukuhlala kwe-β-SiC, okuholela ekwakhiweni kwe-SiC kanye ne-silicon ephindaphindayo.
Ngenkathi kuncishiswe kancane ekuphatheni okushisayo ngenxa yezengezo ze-silicon yensimbi, I-RBSC ihlinzeka ngokuzinza okuphezulu kakhulu kanye nentengo ephansi yokukhiqiza, okwenza ivelele ekusetshenzisweni kwezentengiselwano ezinkulu.
I-SiC ecindezelwe okushisayo, nakuba kubiza kakhulu, inikeza ukushuba okukhulu nokuhlanzeka, ibekelwe izinhlelo zokusebenza ezidinga kakhulu njengokuthuthukiswa kwekristalu eyodwa.
2.2 Ikhwalithi Ephezulu Yomhlaba kanye Nokunemba KweJiyomethri
Imishini ye-post-sintering, okuhlanganisa ukugaya nokugeza, iqinisekisa ukumelana okuqondile kwe-dimensional kanye nezindawo ezibushelelezi zangaphakathi ezinciphisa amawebhusayithi e-nucleation futhi zinciphise ingozi yokungcola.
Ubulukhuni bobuso bulawulwa ngokucophelela kakhulu ukumisa ukunamathela kokuncibilika futhi kusize ukukhululwa kalula kwemikhiqizo eqinisiwe.
I-geometry ye-crucible– njengokuqina kodonga, i-angle ye-taper, kanye ne-curvature ephansi– ithuthukiswa ukuze ibhalansise isisindo sokushisa, ukuqina kwesakhiwo, kanye nokuhambisana ne-heater burner.
Imiklamo eyenziwe ngokwezifiso ivumela amavolumu athile wokuncibilika, amaphrofayili okushisa, kanye nokuzwela kwempahla, eqinisekisa ukusebenza kahle okuhle kuzo zonke izinqubo ezihlukene zezimboni.
Ukulawulwa kwekhwalithi okuthuthukile, kufaka phakathi i-X-ray diffraction, ukuskena i-electron microscopy, kanye nokuhlolwa kwe-ultrasonic, iqinisekisa i-microstructural homogeneity kanye nokuntuleka kwezindaba ezifana nezimbotshana noma ukuhlukana.
3. Ukumelana Kwamakhemikhali Nokusebenzelana Nokuncibilika
3.1 Ukungangeni Ezindaweni Ezinolaka
I-SiC crucibles ibonisa ukumelana okuvelele ekuhlaselweni kwamakhemikhali ngezinsimbi ezincibilikisiwe, umusa, nosawoti ongenawo oxidizing, okwedlulele okujwayelekile kwe-graphite ne-oxide ceramics.
Zivikelekile lapho zithintana ne-aluminium encibilikisiwe, ithusi, isiliva, nama-alloys awo, ukumelana nokumanzisa nokuncibilika ngenxa yamandla aphansi ahlangana ubuso nokwakheka kwama-oxide angaphandle avikelayo..
Ku-silicon kanye nokuphathwa kwe-germanium kuma-photovoltaics nama-semiconductors, I-SiC crucibles ivimbela ukungcoliswa kwensimbi okungase kwenze buthaka izakhiwo zokuhlala ezidijithali.
Nokho, ngaphansi kwezimo ze-oxidizing ngokwedlulele noma ekubonakaleni kwezinguquko ze-alkaline, I-SiC ingakwazi ukwenza i-oxidize ukuthuthukisa i-silica (SiO ₂), okungase kuphendule nakakhulu ukwenza ama-silicates aphansi-ancibilika.
Ngaleso sizathu, I-SiC ifaniswe kahle kakhulu nezindawo ezingathathi hlangothi noma ezinciphisayo, lapho ukuzinza kwayo kukhuliswa khona.
3.2 Imikhawulo kanye Nokucabangela Ukuhambisana
Naphezu kokuqina kwayo, I-SiC ayisebenzi yonke indawo; isabela ngemikhiqizo ethile encibilikisiwe, ikakhulukazi izinsimbi zeqembu le-iron (Fe, Ku, Co) emazingeni okushisa aphezulu nge-carburization kanye nezinqubo zokuqedwa.
Ekucubunguleni insimbi ewuketshezi, Ama-SiC crucibles awohloka ngokushesha futhi ngenxa yaleso sizathu ayagwenywa.
Ngendlela efanayo, ama-antacids nezinsimbi zomhlaba ezine-alkali (isib., Li, Kakade, Ca) Unganciphisa i-SiC, ukwethula ikhabhoni nokudala ama-silicides, ukunciphisa ukusetshenziswa kwazo ekuhlanganiseni okubalulekile kwebhethri noma ukusakaza kwensimbi okusebenzayo.
Ukuze ingilazi eliquified kanye zobumba, I-SiC ivamise ukuhambisana nokho ingase yethule umkhondo we-silicon ngqo ezingilazini ezibonakalayo ezibucayi kakhulu noma zikagesi.
Ukubona lokhu kuxhumana okuqondene nezinto ezithile kuyadingeka ukuze ukhethe uhlobo olufanele lwe-crucible kanye nenqubo eqinisekisa ubumsulwa nokuphila isikhathi eside.
4. Izicelo Zezimboni kanye Nenguquko Yezobuchwepheshe
4.1 I-Metallurgy, I-semiconductor, kanye Nemikhakha Yamandla Avuselelekayo
I-SiC crucibles ibalulekile ekukhiqizeni i-multicrystalline kanye ne-monocrystalline ingots ye-silicon yamabhethri elanga., lapho bemelela khona ukuchayeka okuqondile isikhathi eside ku-silicon encibilikisiwe ku- ~ 1420 °C.
Ukuvikeleka kwawo okushisayo kwenza ukufiphala okuthile okufanayo futhi kunciphisa ukuminyana kokugudluka, ithonya ngqo ukusebenza kahle kwelanga.
Ezimbonini, I-SiC crucibles isetshenziselwa ukuncibilikisa izinsimbi ezingenayo insimbi njenge-aluminium nethusi., ukuhlinzeka ngobude besikhathi sokuphila kanye nokuncipha kwentuthuko yemfucumfucu uma kuqhathaniswa nezinketho zobumba-graphite.
Ziphinde zisetshenziswe elebhu yezinga lokushisa eliphezulu ukuze kuhlolwe i-thermogravimetric., ukuskena okuhlukile kwe-calorimetry, kanye nokuhlanganiswa kwe-porcelain eyinkimbinkimbi kanye nezinhlanganisela ze-intermetallic.
4.2 Izimfashini Ezizayo kanye Nokuhlanganiswa Komkhiqizo Okuthuthukile
Izinhlelo zokusebenza ezisafufusa zihlanganisa ukusetshenziswa kweziphambano ze-SiC ekuhlolweni kwemikhiqizo yenuzi esizukulwaneni esilandelayo kanye neziphehlisi zikasawoti ezincibilikisiwe., lapho kuhlolwa ukumelana kwazo emisebeni nama-fluoride ancibilikisiwe.
Izindwangu ezifana ne-pyrolytic boron nitride (I-PBN) noma yttria (Y OKUBILI O ₃) zisetshenziswa ezindaweni ezingaphezulu kwe-SiC ukuze kuthuthukiswe ukungangeni kwamakhemikhali nokumisa ukusakazeka kwe-silicon ezinqubweni zokuhlanzeka okuphezulu kakhulu..
Ukukhiqizwa okungeziwe kwama-elementi e-SiC asebenzisa i-binder jetting noma i-stereolithography kuyathuthukiswa, i-geometries yesikhungo esikhangayo kanye ne-prototyping esheshayo yemiklamo ekhethekile ye-crucible.
Njengoba sikhula isidingo sokonga ugesi, isikhathi eside, kanye nokubamba izinga lokushisa eliphezulu okungenakungcola, I-silicon carbide crucibles ngokuqinisekile izohlala iyisisekelo sobuchwepheshe besimanje ekukhiqizeni imikhiqizo ethuthukisiwe.
Ekuphetheni, I-silicon carbide crucibles imelela isici esibalulekile esivumelayo ezinqubweni ezisezingeni eliphezulu zezimboni nezokwelapha.
Inhlanganisela yabo engenakulinganiswa yokuzinza okushisayo, ukuqina komshini, kanye nokumelana namakhemikhali kubenza babe yizinto ezikhethwayo zohlelo lokusebenza lapho ukusebenza kahle nokuthembeka kubaluleke kakhulu.
5. Umhlinzeki
I-Advanced Ceramics yasungulwa ngo-Okthoba 17, 2012, yibhizinisi lobuchwepheshe obuphezulu elizinikele ocwaningweni nasekuthuthukisweni, ukukhiqiza, ukucubungula, ukuthengisa kanye nezinsizakalo zobuchwepheshe zezinto eziphathelene ne-ceramic nemikhiqizo. Imikhiqizo yethu ihlanganisa kodwa ingagcini nje nge-Boron Carbide Ceramic Products, I-Boron Nitride Ceramic Products, Imikhiqizo ye-Silicon Carbide Ceramic, Imikhiqizo ye-Silicon Nitride Ceramic, I-Zirconium Dioxide Ceramic Products, njll. Uma unentshisekelo, sicela ukhululeke ukuxhumana nathi.
Omaka: I-Silicon Carbide Crucibles, I-Silicon Carbide Ceramic, I-Silicon Carbide Ceramic Crucibles
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