1. Silizio Karburoaren Kristalografia eta Material Printzipioak
1.1 Polimorfismoa eta lotura atomikoa SiC-n
(Silizio-karburoko zeramikazko plakak)
Silizio karburoa (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, distinguished by its amazing polymorphism– baino gehiago 250 well-known polytypes– all sharing strong directional covalent bonds but varying in stacking series of Si-C bilayers.
One of the most technologically relevant polytypes are 3C-SiC (cubic zinc blende structure), eta 4H-SiC eta 6H-SiC mota hexagonalak, each showing refined variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for particular applications.
Siren gogortasuna– C lotura, with a bond power of around 318 kJ/mol, underpins SiC’s phenomenal firmness (Mohsen sendotasuna 9– 9.5), urtze-faktore handia (~ 2700 °C), and resistance to chemical degradation and thermal shock.
Zeramikazko plaketan, the polytype is generally selected based upon the meant use: 6H-SiC prevails in architectural applications due to its ease of synthesis, while 4H-SiC dominates in high-power electronics for its exceptional fee carrier flexibility.
Bandgap handia (2.9– 3.3 eV depending upon polytype) also makes SiC an excellent electrical insulator in its pure form, though it can be doped to function as a semiconductor in specialized electronic tools.
1.2 Mikroegitura eta etapa-garbitasuna zeramikazko plaketan
The efficiency of silicon carbide ceramic plates is critically dependent on microstructural attributes such as grain dimension, lodiera, etapa homogeneotasuna, and the visibility of secondary stages or impurities.
High-grade plates are usually fabricated from submicron or nanoscale SiC powders via advanced sintering methods, ale finak eraginez, completely dense microstructures that optimize mechanical strength and thermal conductivity.
Pollutants such as complimentary carbon, silizea (SiO₂), or sintering help like boron or aluminum have to be carefully controlled, as they can form intergranular movies that decrease high-temperature strength and oxidation resistance.
Residual porosity, even at low levels (
Advanced Ceramics urrian sortu zen 17, 2012, ikerketa eta garapenarekin konprometitutako goi-teknologiako enpresa bat da, ekoizpena, prozesatzea, Zeramikazko material erlatiboen salmenta eta zerbitzu teknikoak, hala nola Silizio Karburo Zeramikazko Plaka. Gure produktuek boro karburo zeramikazko produktuak barne hartzen dituzte, Boro Nitruroa Zeramikazko Produktuak, Silizio karburo zeramikazko produktuak, Silizio nitruroa zeramikazko produktuak, Zirkonio dioxidoaren zeramikazko produktuak, etab. Interesatzen bazaizu, mesedez jar zaitez gurekin harremanetan.
Etiketak: siliziozko karburozko plaka,karburozko plaka,silizio karburozko xafla
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